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TM09N02I

Public Made by Adom

by adom

Tritech-MOS MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TM09N02I

Tritech-MOS · MOSFETs · SOT-23

TM09N02I from Tritech-MOS, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS(th) 0.5 to 1.2 V and an absolute maximum VGS of ±12 V.
2 S passive Source; the current return terminal, which is also the body-diode anode, with continuous diode current up to 9.0 A.
3 D passive Drain; maximum VDS of 20 V, with ID of 7.5 A at TA=25℃ and pulsed drain current up to 32 A.

Key specifications

Parameter Value
Manufacturer Tritech-MOS
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 20 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=20V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±12V 2
Gate Threshold Voltage VGS(th) 0.5 0.7 1.2 V VDS=VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(on) 11 16 mΩ VGS=4.5V, ID=8A 2
Static Drain-Source On-Resistance RDS(on) 15 22.5 mΩ VGS=2.5V, ID=5A 2
Maximum Continuous Drain to Source Diode Forward Current IS 9 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 32 A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS=0V, IS=8A 2
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID@TA=25℃ 7.5 A VGS @ 4.5V 1
Continuous Drain Current ID@TA=70℃ 5 A VGS @ 4.5V 1
Pulsed Drain Current IDM 32 A 1
Total Power Dissipation PD@TA=25℃ 2 W 1
Total Power Dissipation PD@TA=70℃ 0.66 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 120 ℃/W 1
Input Capacitance Ciss 700 pF VDS=10V, VGS=0V, f=1.0MHz 2
Output Capacitance Coss 132 pF VDS=10V, VGS=0V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 114 pF VDS=10V, VGS=0V, f=1.0MHz 2
Total Gate Charge Qg 15 nC VDS=10V, ID=4A, VGS=4.5V 2
Gate-Source Charge Qgs 2 nC VDS=10V, ID=4A, VGS=4.5V 2
Gate-Drain Charge Qgd 5.2 nC VDS=10V, ID=4A, VGS=4.5V 2
Turn-on Delay Time td(on) 9 ns VDS=10V, ID=4A, RGEN=3Ω, VGS=4.5V 2
Turn-on Rise Time tr 25 ns VDS=10V, ID=4A, RGEN=3Ω, VGS=4.5V 2
Turn-off Delay Time td(off) 37 ns VDS=10V, ID=4A, RGEN=3Ω, VGS=4.5V 2
Turn-off Fall Time tf 14 ns VDS=10V, ID=4A, RGEN=3Ω, VGS=4.5V 2

CAD (KiCad official)

  • Symbol: TM09N02I
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: tm09n02i-etched.step / tm09n02i-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tm09n02i.step / tm09n02i.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Tritech-MOS datasheet (5 pp, sha256 9515d699f58fba89, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF