component
TM09N02I
Public Made by Adomby adom
Tritech-MOS MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownTM09N02I
Tritech-MOS · MOSFETs · SOT-23
TM09N02I from Tritech-MOS, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS(th) 0.5 to 1.2 V and an absolute maximum VGS of ±12 V. |
| 2 | S | passive | Source; the current return terminal, which is also the body-diode anode, with continuous diode current up to 9.0 A. |
| 3 | D | passive | Drain; maximum VDS of 20 V, with ID of 7.5 A at TA=25℃ and pulsed drain current up to 32 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tritech-MOS |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=20V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±12V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.7 | 1.2 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | 11 | 16 | mΩ | VGS=4.5V, ID=8A | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 15 | 22.5 | mΩ | VGS=2.5V, ID=5A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 9 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 32 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=8A | 2 | ||
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | 7.5 | A | VGS @ 4.5V | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | 5 | A | VGS @ 4.5V | 1 | ||
| Pulsed Drain Current | IDM | 32 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 2 | W | 1 | |||
| Total Power Dissipation | PD@TA=70℃ | 0.66 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 120 | ℃/W | 1 | |||
| Input Capacitance | Ciss | 700 | pF | VDS=10V, VGS=0V, f=1.0MHz | 2 | ||
| Output Capacitance | Coss | 132 | pF | VDS=10V, VGS=0V, f=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 114 | pF | VDS=10V, VGS=0V, f=1.0MHz | 2 | ||
| Total Gate Charge | Qg | 15 | nC | VDS=10V, ID=4A, VGS=4.5V | 2 | ||
| Gate-Source Charge | Qgs | 2 | nC | VDS=10V, ID=4A, VGS=4.5V | 2 | ||
| Gate-Drain Charge | Qgd | 5.2 | nC | VDS=10V, ID=4A, VGS=4.5V | 2 | ||
| Turn-on Delay Time | td(on) | 9 | ns | VDS=10V, ID=4A, RGEN=3Ω, VGS=4.5V | 2 | ||
| Turn-on Rise Time | tr | 25 | ns | VDS=10V, ID=4A, RGEN=3Ω, VGS=4.5V | 2 | ||
| Turn-off Delay Time | td(off) | 37 | ns | VDS=10V, ID=4A, RGEN=3Ω, VGS=4.5V | 2 | ||
| Turn-off Fall Time | tf | 14 | ns | VDS=10V, ID=4A, RGEN=3Ω, VGS=4.5V | 2 |
CAD (KiCad official)
- Symbol:
TM09N02I - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
tm09n02i-etched.step/tm09n02i-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tm09n02i.step/tm09n02i.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tritech-MOS datasheet (5 pp, sha256
9515d699f58fba89, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).