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TM08G04S

Public Made by Adom

by adom

Tritech-MOS MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TM08G04S

Tritech-MOS · MOSFETs · SOP-8

TM08G04S from Tritech-MOS, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (Q1), rated VDS = 40V and ID = 8A at TA=25℃.
2 G1 input Gate of the N-channel MOSFET (Q1), with a maximum gate-source voltage of ±20V.
3 S2 passive Source of the P-channel MOSFET (Q2), rated VDS = -40V and ID = -7A at TA=25℃.
4 G2 input Gate of the P-channel MOSFET (Q2), with a maximum gate-source voltage of ±20V.
5 D2 passive Drain of the P-channel MOSFET (Q2), with a maximum drain-source voltage of -40V; connected to pin 6.
6 D2 passive Drain of the P-channel MOSFET (Q2), with a maximum drain-source voltage of -40V; connected to pin 5.
7 D1 passive Drain of the N-channel MOSFET (Q1), with a maximum drain-source voltage of 40V; connected to pin 8.
8 D1 passive Drain of the N-channel MOSFET (Q1), with a maximum drain-source voltage of 40V; connected to pin 7.

Key specifications

Parameter Value
Manufacturer Tritech-MOS
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-Ch) VDS 40 V N-Channel 1
Drain-Source Voltage (P-Ch) VDS -40 V P-Channel 1
Gate-Source Voltage (N-Ch) VGS -20 20 V N-Channel 1
Gate-Source Voltage (P-Ch) VGS -20 20 V P-Channel 1
Continuous Drain Current (N-Ch) ID@TA=25℃ 8 A VGS @ 10V, TA=25℃ 1
Continuous Drain Current (P-Ch) ID@TA=25℃ -7 A VGS @ 10V, TA=25℃ 1
Continuous Drain Current (N-Ch) ID@TA=70℃ 4.2 A VGS @ 10V, TA=70℃ 1
Continuous Drain Current (P-Ch) ID@TA=70℃ -4.2 A VGS @ 10V, TA=70℃ 1
Pulsed Drain Current (N-Ch) IDM 26 A 1
Pulsed Drain Current (P-Ch) IDM -24 A 1
Single Pulse Avalanche Energy (N-Ch) EAS 16.2 mJ 1
Single Pulse Avalanche Energy (P-Ch) EAS 39 mJ 1
Total Power Dissipation (N-Ch) PD@TA=25℃ 1.67 W TA=25℃ 1
Total Power Dissipation (P-Ch) PD@TA=25℃ 1.67 W TA=25℃ 1
Storage Temperature Range (N-Ch and P-Ch) TSTG -55 150 ℃ 1
Operating Junction Temperature Range (N-Ch and P-Ch) TJ -55 150 ℃ 1
Drain-Source Breakdown Voltage (N-Ch) BVDSS 40 44 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance (N-Ch) RDS(ON) 24 35 mΩ VGS=10V, ID=5A 2
Static Drain-Source On-Resistance (N-Ch) RDS(ON) 36 49 mΩ VGS=4.5V, ID=4A 2
Gate Threshold Voltage (N-Ch) VGS(th) 1.5 2.5 3.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current (N-Ch, TJ=25℃) IDSS 1 uA VDS=32V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current (N-Ch, TJ=55℃) IDSS 5 uA VDS=32V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current (N-Ch) IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current (N-Ch) IS 6.1 A VG=VD=0V, Force Current 2
Pulsed Source Current (N-Ch) ISM 23 A 2
Diode Forward Voltage (N-Ch) VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
Drain-Source Breakdown Voltage (P-Ch) BVDSS -40 V VGS=0V, ID=-250uA 3
Static Drain-Source On-Resistance (P-Ch) RDS(ON) 35 48 mΩ VGS=-10V, ID=-5A 3
Static Drain-Source On-Resistance (P-Ch) RDS(ON) 49 68 mΩ VGS=-4.5V, ID=-3A 3
Gate Threshold Voltage (P-Ch) VGS(th) -1.5 -2.5 -3.5 V VGS=VDS, ID=-250uA 3
Drain-Source Leakage Current (P-Ch, TJ=25℃) IDSS 1 uA VDS=-32V, VGS=0V, TJ=25℃ 3
Drain-Source Leakage Current (P-Ch, TJ=55℃) IDSS 5 uA VDS=-32V, VGS=0V, TJ=55℃ 3
Gate-Source Leakage Current (P-Ch) IGSS -100 100 nA VGS=±20V, VDS=0V 3
Continuous Source Current (P-Ch) IS -5.7 A VG=VD=0V, Force Current 3
Diode Forward Voltage (P-Ch) VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 3
Thermal Resistance Junction-Ambient RθJA 57 ℃/W 1
Thermal Resistance Junction-Case RθJC 30 ℃/W 1

CAD (KiCad official)

  • Symbol: TM08G04S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: tm08g04s-etched.step / tm08g04s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tm08g04s.step / tm08g04s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Tritech-MOS datasheet (8 pp, sha256 61902128803c394a, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF