component
TM08G04S
Public Made by Adomby adom
Tritech-MOS MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTM08G04S
Tritech-MOS · MOSFETs · SOP-8
TM08G04S from Tritech-MOS, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (Q1), rated VDS = 40V and ID = 8A at TA=25℃. |
| 2 | G1 | input | Gate of the N-channel MOSFET (Q1), with a maximum gate-source voltage of ±20V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (Q2), rated VDS = -40V and ID = -7A at TA=25℃. |
| 4 | G2 | input | Gate of the P-channel MOSFET (Q2), with a maximum gate-source voltage of ±20V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET (Q2), with a maximum drain-source voltage of -40V; connected to pin 6. |
| 6 | D2 | passive | Drain of the P-channel MOSFET (Q2), with a maximum drain-source voltage of -40V; connected to pin 5. |
| 7 | D1 | passive | Drain of the N-channel MOSFET (Q1), with a maximum drain-source voltage of 40V; connected to pin 8. |
| 8 | D1 | passive | Drain of the N-channel MOSFET (Q1), with a maximum drain-source voltage of 40V; connected to pin 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tritech-MOS |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Ch) | VDS | 40 | V | N-Channel | 1 | ||
| Drain-Source Voltage (P-Ch) | VDS | -40 | V | P-Channel | 1 | ||
| Gate-Source Voltage (N-Ch) | VGS | -20 | 20 | V | N-Channel | 1 | |
| Gate-Source Voltage (P-Ch) | VGS | -20 | 20 | V | P-Channel | 1 | |
| Continuous Drain Current (N-Ch) | ID@TA=25℃ | 8 | A | VGS @ 10V, TA=25℃ | 1 | ||
| Continuous Drain Current (P-Ch) | ID@TA=25℃ | -7 | A | VGS @ 10V, TA=25℃ | 1 | ||
| Continuous Drain Current (N-Ch) | ID@TA=70℃ | 4.2 | A | VGS @ 10V, TA=70℃ | 1 | ||
| Continuous Drain Current (P-Ch) | ID@TA=70℃ | -4.2 | A | VGS @ 10V, TA=70℃ | 1 | ||
| Pulsed Drain Current (N-Ch) | IDM | 26 | A | 1 | |||
| Pulsed Drain Current (P-Ch) | IDM | -24 | A | 1 | |||
| Single Pulse Avalanche Energy (N-Ch) | EAS | 16.2 | mJ | 1 | |||
| Single Pulse Avalanche Energy (P-Ch) | EAS | 39 | mJ | 1 | |||
| Total Power Dissipation (N-Ch) | PD@TA=25℃ | 1.67 | W | TA=25℃ | 1 | ||
| Total Power Dissipation (P-Ch) | PD@TA=25℃ | 1.67 | W | TA=25℃ | 1 | ||
| Storage Temperature Range (N-Ch and P-Ch) | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range (N-Ch and P-Ch) | TJ | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage (N-Ch) | BVDSS | 40 | 44 | V | VGS=0V, ID=250uA | 2 | |
| Static Drain-Source On-Resistance (N-Ch) | RDS(ON) | 24 | 35 | mΩ | VGS=10V, ID=5A | 2 | |
| Static Drain-Source On-Resistance (N-Ch) | RDS(ON) | 36 | 49 | mΩ | VGS=4.5V, ID=4A | 2 | |
| Gate Threshold Voltage (N-Ch) | VGS(th) | 1.5 | 2.5 | 3.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current (N-Ch, TJ=25℃) | IDSS | 1 | uA | VDS=32V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current (N-Ch, TJ=55℃) | IDSS | 5 | uA | VDS=32V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current (N-Ch) | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current (N-Ch) | IS | 6.1 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current (N-Ch) | ISM | 23 | A | 2 | |||
| Diode Forward Voltage (N-Ch) | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Drain-Source Breakdown Voltage (P-Ch) | BVDSS | -40 | V | VGS=0V, ID=-250uA | 3 | ||
| Static Drain-Source On-Resistance (P-Ch) | RDS(ON) | 35 | 48 | mΩ | VGS=-10V, ID=-5A | 3 | |
| Static Drain-Source On-Resistance (P-Ch) | RDS(ON) | 49 | 68 | mΩ | VGS=-4.5V, ID=-3A | 3 | |
| Gate Threshold Voltage (P-Ch) | VGS(th) | -1.5 | -2.5 | -3.5 | V | VGS=VDS, ID=-250uA | 3 |
| Drain-Source Leakage Current (P-Ch, TJ=25℃) | IDSS | 1 | uA | VDS=-32V, VGS=0V, TJ=25℃ | 3 | ||
| Drain-Source Leakage Current (P-Ch, TJ=55℃) | IDSS | 5 | uA | VDS=-32V, VGS=0V, TJ=55℃ | 3 | ||
| Gate-Source Leakage Current (P-Ch) | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| Continuous Source Current (P-Ch) | IS | -5.7 | A | VG=VD=0V, Force Current | 3 | ||
| Diode Forward Voltage (P-Ch) | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 3 | ||
| Thermal Resistance Junction-Ambient | RθJA | 57 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 30 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
TM08G04S - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
tm08g04s-etched.step/tm08g04s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tm08g04s.step/tm08g04s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tritech-MOS datasheet (8 pp, sha256
61902128803c394a, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).