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TLV77333PDQNR

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Texas Instruments , X2SON-4(1x1). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TLV77333PDQNR

Texas Instruments · IC · X2SON-4(1x1)

TLV77333PDQNR from Texas Instruments, in a X2SON-4(1x1). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 OUT power_out Regulated output voltage; requires a low-ESR capacitor to ground for stability (0.47µF to 40µF effective), placed close to OUT and GND, with an internal pulldown resistor discharging VOUT when VEN < VEN(LOW).
2 GND power_in Common ground.
3 EN input Enable input; a low voltage (< VEN(LOW)) turns the regulator off and discharges the output to GND, and a high voltage (> VEN(HI)) enables the regulator output.
4 IN power_in Input voltage supply (1.4V to 5.5V); use the nominal 1µF or larger capacitor from IN to ground placed close to the IN and GND pins for best transient response.
5 Thermal Pad passive Thermal pad for the X2SON package; connect to GND or leave floating, do not connect to any potential other than GND, and connect to a large-area ground plane for best thermal performance.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package X2SON-4(1x1)
Category
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Output voltage tolerance ΔVOUT -2 2 % 1.8V ≤ VOUT ≤ 3.3V 5
Output voltage tolerance ΔVOUT -2.5 2.5 % TJ = -40℃ to 85℃, 2.5V ≤ VOUT ≤ 3.3V 5
Line regulation ΔVOUT/ΔVIN 0.01 0.1 %/V VIN = (VOUT(NOM) + 0.5V) to 5.5V 5
Load regulation ΔVOUT/ΔIOUT 85 110 µV/mA IOUT = 1mA to 300mA 5
Quiescent ground current IGND 80 120 µA VEN = VIN = 5.5V, IOUT = 0mA, TJ = -40°C to 85°C 5
Shutdown ground current ISHDN 0.01 2 µA VEN < VEN(LOW), VIN = 5.5V, TJ = -40°C to 85°C 5
Dropout voltage VDO 180 210 mV IOUT = 300mA, VIN = VOUT(NOM), 2.8V ≤ VOUT ≤ 3.3V, DQN package 5
Dropout voltage VDO 245 mV IOUT = 300mA, VIN = VOUT(NOM), TJ = -40°C to 85°C, 2.8V ≤ VOUT ≤ 3.3V, DQN package 5
Output current limit ICL 350 720 mA VOUT = 0.9 x VOUT(NOM), TJ = -40°C to 85°C 5
Low input threshold VEN(LOW) 0.3 V VEN falling until the output is disabled. TJ = -40°C to 85°C 6
High input threshold VEN(HI) 0.9 V VEN rising until the output is enabled. TJ = -40°C to 85°C 6
EN input leakage current IEN 0.01 1 µA VEN = 5.5V and VIN = 5.5V 6
Short-circuit current limit ISC 65 mA VOUT = 0V 5
Power-supply rejection ratio PSRR 80 dB IOUT = 1mA, VIN = VOUT + 1.0V, f = 217Hz 5
Power-supply rejection ratio PSRR 72 dB IOUT = 1mA, VIN = VOUT + 1.0V, f = 1kHz 5
Output noise voltage VN 75 µVRMS BW = 10Hz to 100kHz, IOUT = 50mA; printed as 75 x VOUT 5
Power-supply rejection ratio PSRR 56 dB IOUT = 50mA, VIN = VOUT + 1.0V, f = 100kHz 5
Power-supply rejection ratio PSRR 55 dB IOUT = 50mA, VIN = VOUT + 1.0V, f = 1MHz 5
Output automatic discharge pulldown resistance RPULLDOWN 135 Ω VEN < VEN(LOW) (output disabled), VIN = 3.3V 5
Thermal shutdown rising TSD 160 °C TJ rising 6
Thermal shutdown falling TSD 140 °C TJ falling 6
Start-up time tSTR 400 µs From VEN > VEN(HI) to VOUT = 95% of VOUT(NOM), VIN rise time = 1V/µs 6
Input voltage VIN -0.3 6.5 V 4
Output voltage VOUT -0.3 6 V 6.0 or VIN + 0.3 (lesser) 4
Enable voltage VEN -0.3 6.5 V 4
Operating junction temperature TJ -55 150 °C 4
Storage temperature Tstg -65 150 °C 4
ESD HBM V(ESD) -1000 1000 V Human-body model, ANSI/ESDA/JEDEC JS-001 4
ESD CDM V(ESD) -500 500 V Charged-device model, JESD22-C101 4
Input supply voltage VIN 1.4 5.5 V 4
Enable input voltage VEN 0 5.5 V 4
Output current IOUT 0 300 mA 4
Input capacitor CIN 1 µF 4
Output capacitance COUT 0.47 40 µF Effective capacitance 4
Output capacitor ESR ESR 100 mΩ 4
Operating junction temperature TJ -40 125 °C 4
Junction-to-ambient thermal resistance RθJA 236.2 °C/W DQN (X2SON) 4 pins 5
Junction-to-case (top) thermal resistance RθJC(top) 218.5 °C/W DQN (X2SON) 5
Junction-to-board thermal resistance RθJB 180.8 °C/W DQN (X2SON) 5
Junction-to-top characterization parameter ψJT 16.1 °C/W DQN (X2SON) 5
Junction-to-board characterization parameter ψJB 179.6 °C/W DQN (X2SON) 5
Junction-to-case (bottom) thermal resistance RθJC(bot) 157.2 °C/W DQN (X2SON) 5

CAD (KiCad official)

  • Symbol: TLV77333PDQNR
  • Footprint: Package_SON:Texas_X2SON-4_1x1mm_P0.65mm
  • 3D model: X2SON-4(1x1), generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.4 mm nominal X2SON height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: tlv77333pdqnr-etched.step / tlv77333pdqnr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tlv77333pdqnr.step / tlv77333pdqnr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (32 pp, sha256 ca5860361e44f9bd, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF