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Ray tlv62150rgtr: specified limits as data (metadata.characteristics, 31 rows from the datasheet) ac7b1cc 26d ago

TLV62150RGTR

Texas Instruments · DC-DC Converters · VQFN-16-EP(3x3)

TLV62150RGTR from Texas Instruments, in a VQFN-16-EP(3x3). Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 SW output Switch node, which is connected to the internal MOSFET switches. Connect inductor between SW and output capacitor.
2 SW output Switch node, which is connected to the internal MOSFET switches. Connect inductor between SW and output capacitor.
3 SW output Switch node, which is connected to the internal MOSFET switches. Connect inductor between SW and output capacitor.
4 PG output Output power good (High = VOUT ready, Low = VOUT below nominal regulation); open drain (requires pull-up resistor).
5 FB input Voltage feedback. Connect resistive voltage divider to this pin.
6 AGND power_in Analog Ground. Must be connected directly to the Exposed Thermal Pad and common ground plane.
7 FSW input Switching Frequency Select (Low ≈ 2.5 MHz, High ≈ 1.25 MHz for typical operation).
8 DEF input Output Voltage Scaling (Low = nominal, High = nominal + 5%).
9 SS/TR input Soft-Start / Tracking Pin. An external capacitor connected to this pin sets the internal voltage reference rise time. It can be used for tracking and sequencing.
10 AVIN power_in Supply voltage for control circuitry. Connect to same source as PVIN.
11 PVIN power_in Supply voltage for power stage. Connect to same source as AVIN.
12 PVIN power_in Supply voltage for power stage. Connect to same source as AVIN.
13 EN input Enable input (High = enabled, Low = disabled).
14 VOS input Output voltage sense pin and connection for the control loop circuitry.
15 PGND power_in Power ground. Must be connected directly to the Exposed Thermal Pad and common ground plane.
16 PGND power_in Power ground. Must be connected directly to the Exposed Thermal Pad and common ground plane.
17 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package VQFN-16-EP(3x3)
Category Power Management (PMIC)
Pins 17

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Pin voltage AVIN, PVIN -0.3 20 V 5
Pin voltage EN, SS/TR -0.3 V 5
Pin voltage SW -0.3 V 5
Pin voltage DEF, FSW, FB, PG, VOS -0.3 7 V 5
Power Good sink current 10 mA PG 5
Operating junction temperature TJ -40 125 °C 5
Storage temperature Tstg -65 150 °C 5
Electrostatic discharge, human body model (HBM) VESD -2000 2000 V Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins 5
Electrostatic discharge, charged device model (CDM) VESD -500 500 V Charged device model (CDM), per JEDEC specification JESD22-C101, all pins 5
Supply Voltage 4 17 V 5
Temperature Range TA -40 85 °C 5
Operating junction temperature TJ -40 125 °C 5
VIN Input Voltage Range VIN 4 17 V 6
IQ Operating Quiescent Current IQ 19 27 μA EN=High, IOUT=0 mA, device not switching 6
ISD Shutdown Current ISD 1.5 4 μA EN=Low 6
VUVLO Undervoltage Lockout Threshold VUVLO 2.6 2.7 2.8 V Falling Input Voltage (PWM mode operation) 6
Input Leakage Current (EN, DEF, FSW) ILKG 0.01 1 μA EN=VIN or GND; DEF, FSW=VOUT or GND 6
Power Good Threshold Voltage, Rising (%VOUT) VTH_PG 92 95 98 % 6
Power Good Threshold Voltage, Falling (%VOUT) VTH_PG 87 90 94 % 6
Power Good Output Low VOL_PG 0.07 0.3 V IPG=-2 mA 6
Input Leakage Current (PG) ILKG_PG 1 400 nA VPG=1.8 V 6
SS/TR Pin Source Current ISS/TR 2.3 2.5 2.7 μA 6
Input Leakage Current (FB) ILKG_FB 1 100 nA VFB=0.8 V 6
Output Voltage Range VOUT 0.9 5 V VIN ≥ VOUT 6
Initial Output Voltage Accuracy 780 800 820 mV PWM mode operation, VIN ≥ VOUT +1 V 6
Junction-to-ambient thermal resistance RθJA 45 °C/W 5
Junction-to-case (top) thermal resistance RθJC(top) 53.6 °C/W 5
Junction-to-board thermal resistance RθJB 17.4 °C/W 5
Junction-to-top characterization parameter ψJT 1.1 °C/W 5
Junction-to-board characterization parameter ψJB 17.4 °C/W 5
Junction-to-case (bottom) thermal resistance RθJC(bot) 4.5 °C/W 5

CAD (KiCad official)

  • Symbol: TLV62150RGTR
  • Footprint: Package_DFN_QFN:QFN-16-1EP_3x3mm_P0.5mm_EP1.7x1.7mm
  • 3D model: VQFN-16-EP(3x3) (KiCad packages3D, STEP)
  • 3D model files: tlv62150rgtr-etched.step / tlv62150rgtr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tlv62150rgtr.step / tlv62150rgtr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (41 pp, sha256 ad0a9b1330b05a75, retrieved 2026-09-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF