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Ray Publish 0.1.0 9659741 9d ago

TLV6001IDBVR-HXY

HXY MOSFET · Operational Amplifier · SOT-23-5L

TLV6001IDBVR-HXY from HXY MOSFET, in a SOT-23-5L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 +IN input Positive (noninverting) input; the datasheet states the input common-mode range includes ground and runs from VS-0.1 V to VS+0.1 V.
2 V- power_in Printed description reads "Positive (highest) power supply", which conflicts with the V- name; the datasheet defines Vs = (V+) - (V-), so V- is the lower supply rail and the printed description should be verified.
3 -IN input Negative (inverting) input; the datasheet states the input common-mode range includes ground and runs from VS-0.1 V to VS+0.1 V.
4 OUT output Output; the datasheet states rail-to-rail output swing into heavy loads, with output swing from rail of 5 mV typical at RL=100kΩ.
5 V+ power_in Printed description reads "Negative (lowest) power supply", which conflicts with the V+ name; the datasheet defines Vs = (V+) - (V-) with supply range 1.5 V to 5.5 V single-supply, so V+ is the higher supply rail and the printed description should be verified.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23-5L
Category Amplifiers/Comparators
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply Voltage 6 V 3
Signal Input Terminals Current (2) -10 10 mA 3
Signal Output Terminals Current (3) -200 200 mA 3
Operating Temperature Range -55 125 °C 3
Storage Temperature Range -65 150 °C 3
Junction Temperature -40 150 °C 3
Electrostatic discharge Human-Body Model (HBM) V(ESD) -2000 2000 V 3
Electrostatic discharge Charged-Device Model (CDM) V(ESD) -500 500 V 3
Electrostatic discharge Machine Model V(ESD) 100 V 3
Supply voltage, single-supply Vs 1.5 5.5 V 3
Supply voltage, dual-supply (printed ±0.75 / ±2.75) Vs 0.75 2.75 V 3
Input Offset Voltage VOS -3 1 3 mV 4
Common-Mode Rejection Ratio CMRR 70 80 dB VCM=0.1V to 4V 4
Open-Loop Voltage Gain AV 80 100 dB VOUT=0.1V to 4.9V, RL=100kΩ 4
Power-Supply Rejection Ratio PSRR 80 90 dB VS=1.5V to 5.5V 5
Operating Voltage Range VS 1.5 5.5 V 5
Quiescent Current/Amplifier IQ 28 40 uA IO=0A 5
Input Offset Voltage Average Drift dVOS/dT 1.8 µV/°C TA = -55°C to 125°C 4
Input Bias Current IB 5 pA 4
Input Offset Current IOS 1 pA 4
Input Voltage Noise VN 20 µV PP f=0.1Hz to 10Hz 4
Input Voltage Noise Density en 65 nV/√Hz f=1kHz 4
Gain-Bandwidth Product GBW 1 MHz 4
Slew Rate SR 1 V/us G = +1, VIN=2V Step 4
Settling Time to 0.1% tS 2.5 us G = +1, VIN=2V Step 4
Capacitive Load Drive CL 1000 pF G = +1, VIN=0.2V Step 4

CAD (KiCad official)

  • Symbol: TLV6001IDBVR-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23-5
  • 3D model: SOT-23-5L (KiCad packages3D, STEP)
  • 3D model files: tlv6001idbvr-hxy-etched.step / tlv6001idbvr-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tlv6001idbvr-hxy.step / tlv6001idbvr-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (11 pp, sha256 14630237894a2b5a, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF