component

TLV2888DR

Public Made by Adom

by adom

Texas Instruments Precision Op Amps, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentamplifiers-comparatorstlv2888drfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
tlv2888dr / README.md
History Download
Ray Publish 0.1.0 39f61ed 1d ago

TLV2888DR

Texas Instruments · Precision Op Amps · SOIC-8

TLV2888DR from Texas Instruments, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 OUT A output Output of channel A.
2 -IN A input Inverting input of channel A.
3 +IN A input Noninverting input of channel A.
4 V- power_in Negative supply; supply range (V+)-(V-) is 4.5V to 36V single supply or ±2.25V to ±18V dual supply.
5 +IN B input Noninverting input of channel B.
6 -IN B input Inverting input of channel B.
7 OUT B output Output of channel B.
8 V+ power_in Positive supply; supply range (V+)-(V-) is 4.5V to 36V single supply, with an absolute maximum of 40V.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SOIC-8
Category Amplifiers/Comparators
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage (absolute max) VS 40 V 6
Signal input pin common-mode voltage -0.5 0.5 V (V-), 0.5 to (V+) + 0.5; values are offsets relative to rails 6
Signal input pin current -10 10 mA 6
Operating temperature (absolute max) TA -55 150 °C 6
Junction temperature TJ 150 °C 6
Storage temperature Tstg -65 150 °C 6
ESD HBM V(ESD) -4000 4000 V HBM, ANSI/ESDA/JEDEC JS-001 6
ESD CDM V(ESD) -250 250 V TLV2888D CDM, JS-002 6
Supply voltage, single supply VS 4.5 36 V Single supply 6
Supply voltage, dual supply VS -2.25 18 V Dual supply, ±2.25 to ±18 6
Operating temperature TA -40 125 °C 6
Input offset voltage VOS -15 3 15 µV TA = 25°C 8
Input offset voltage over temperature VOS -20 20 µV TA = -40°C to +125°C 8
Input offset voltage drift dVOS/dT -0.05 0.01 0.05 µV/°C TA = -40°C to +125°C 8
Power-supply rejection ratio PSRR 0.03 0.5 µV/V TA = -40°C to +125°C 8
Input bias current IB -350 50 350 pA TA = 25°C 8
Input bias current over temperature IB 7 nA TA = -40°C to +125°C 8
Input offset current IOS -600 100 600 pA TA = 25°C 8
Input offset current over temperature IOS 3 nA TA = -40°C to +125°C 8
Common-mode voltage range low VCM -0.1 V (V-), 0.1; upper limit (V+), 1.7 8
CMRR, VS = ±2.25V CMRR 118 135 dB (V-), 0.1V ≤ VCM ≤ (V+), 1.7V, VS = ±2.25V 8
CMRR, VS = ±18V CMRR 140 150 dB (V-), 0.1V ≤ VCM ≤ (V+), 1.7V, VS = ±18V 8
CMRR over temperature, VS = ±2.25V CMRR 118 130 dB TA = -40°C to +125°C, VS = ±2.25V 8
CMRR over temperature, VS = ±18V CMRR 140 150 dB TA = -40°C to +125°C, VS = ±18V 8
Open-loop voltage gain, RLOAD = 10kΩ AOL 130 148 dB VS = ±15V, (V-) + 0.6V < VO < (V+), 0.6V, RLOAD = 10kΩ 8
Open-loop voltage gain, RLOAD = 10kΩ, over temperature AOL 130 dB TA = -40°C to +125°C 8
Open-loop voltage gain, RLOAD = 2kΩ AOL 130 144 dB VS = ±15V, (V-) + 1.7V < VO < (V+), 1.7V, RLOAD = 2kΩ 8
Open-loop voltage gain, RLOAD = 2kΩ, over temperature AOL 130 dB TA = -40°C to +125°C 8
Output swing from positive rail, no load VO 26 40 mV Positive rail, VS = 30V, no load 9
Output swing from positive rail, 10kΩ VO 122 150 mV Positive rail, VS = 30V, RLOAD = 10kΩ 9
Output swing from positive rail, 2kΩ VO 500 575 mV Positive rail, VS = 30V, RLOAD = 2kΩ 9
Output swing from negative rail, no load VO 26 40 mV Negative rail, VS = 30V, no load 9
Output swing from negative rail, 10kΩ VO 120 135 mV Negative rail, VS = 30V, RLOAD = 10kΩ 9
Output swing from negative rail, 2kΩ VO 515 575 mV Negative rail, VS = 30V, RLOAD = 2kΩ 9
Output swing from rail over temperature VO 250 mV RLOAD = 10kΩ, TA = -40°C to +125°C, both rails 9
Quiescent current per amplifier, 4.5V IQ 1.5 1.8 mA VS = ±2.25V (VS = 4.5V), IO = 0A 9
Quiescent current per amplifier, 4.5V, over temperature IQ 1.5 1.9 mA VS = ±2.25V (VS = 4.5V), IO = 0A, TA = -40°C to +125°C 9
Quiescent current per amplifier, 36V IQ 1.5 1.8 mA VS = ±18V (VS = 36V), IO = 0A 9
Quiescent current per amplifier, 36V, over temperature IQ 1.5 1.9 mA VS = ±18V (VS = 36V), IO = 0A, TA = -40°C to +125°C 9
Short-circuit current ISC 42 mA ±42 mA typical 9
Gain-bandwidth product GBW 14 MHz 9
Slew rate SR 40 V/µs Gain = 1, 10V step 9
Input voltage noise 0.1Hz to 10Hz En 0.18 µVPP f = 0.1Hz to 10Hz 8
Input voltage noise density en 7.5 nV/√Hz f = 1kHz 8
Junction-to-ambient thermal resistance RθJA 132.3 °C/W TLV2888 D (SOIC), 8 pins 7
Junction-to-case (top) thermal resistance RθJC(top) 72.2 °C/W TLV2888 D (SOIC), 8 pins 7
Junction-to-board thermal resistance RθJB 81.7 °C/W TLV2888 D (SOIC), 8 pins 7
Junction-to-top characterization parameter ΨJT 19.6 °C/W TLV2888 D (SOIC), 8 pins 7
Junction-to-board characterization parameter ΨJB 80.6 °C/W TLV2888 D (SOIC), 8 pins 7

CAD (KiCad official)

  • Symbol: TLV2888DR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: tlv2888dr-etched.step / tlv2888dr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tlv2888dr.step / tlv2888dr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (55 pp, sha256 cfad4277ce2e96a3, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF