# TK8A50D

**TOSHIBA** · MOSFETs · TO-220

TK8A50D from TOSHIBA, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated ±30 V (VGSS) as an absolute maximum. |
| 2 | Drain | passive | Drain terminal; drain-source voltage is rated 500 V (VDSS), with DC drain current 8 A and pulsed drain current 32 A (1 ms pulse). |
| 3 | Source | passive | Source terminal; continuous source-drain reverse current is 8 A (IDR) and pulsed reverse current is 32 A (IDRP). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate leakage current | IGSS | -1 |  | 1 | μA | VGS = ±30 V, VDS = 0 V | 2 |
| Drain cut-off current | IDSS |  |  | 10 | μA | VDS = 500 V, VGS = 0 V | 2 |
| Drain-source breakdown voltage | V(BR)DSS | 500 |  |  | V | ID = 10 mA, VGS = 0 V | 2 |
| Gate threshold voltage | Vth | 2 |  | 4 | V | VDS = 10 V, ID = 1 mA | 2 |
| Drain-source ON-resistance | RDS(ON) |  | 0.7 | 0.85 | Ω | VGS = 10 V, ID = 4 A | 2 |
| Forward transfer admittance | /Yfs/ | 1 | 4 |  | S | VDS = 10 V, ID = 4 A | 2 |
| Continuous drain reverse current (Note 1) | IDR |  |  | 8 | A |  | 2 |
| Pulse drain reverse current (Note 1) | IDRP |  |  | 32 | A |  | 2 |
| Forward voltage (diode) | VDSF |  |  | -1.7 | V | IDR = 8 A, VGS = 0 V | 2 |
| Drain-source voltage | VDSS |  |  | 500 | V | Ta = 25°C | 1 |
| Gate-source voltage | VGSS | -30 |  | 30 | V |  | 1 |
| Drain current DC (Note 1) | ID |  |  | 8 | A | DC | 1 |
| Drain current pulse (Note 1) | IDP |  |  | 32 | A | Pulse (t = 1 ms) | 1 |
| Drain power dissipation | PD |  |  | 40 | W | Tc = 25°C | 1 |
| Single pulse avalanche energy (Note 2) | EAS |  |  | 165 | mJ | VDD = 90 V, Tch = 25°C (initial), L = 4.4 mH, RG = 25 Ω, IAR = 8 A | 1 |
| Avalanche current | IAR |  |  | 8 | A |  | 1 |
| Repetitive avalanche energy (Note 3) | EAR |  |  | 4 | mJ |  | 1 |
| Channel temperature | Tch |  |  | 150 | °C |  | 1 |
| Storage temperature range | Tstg | -55 |  | 150 | °C |  | 1 |
| Thermal resistance, channel to case | Rth (ch-c) |  |  | 3.125 | °C/W |  | 1 |
| Thermal resistance, channel to ambient | Rth (ch-a) |  |  | 62.5 | °C/W |  | 1 |

## CAD (KiCad official)

- Symbol: `TK8A50D`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `tk8a50d-etched.step` / `tk8a50d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tk8a50d.step` / `tk8a50d.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [TOSHIBA datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590183260266393600) (6 pp, sha256 `b8d7c7a544f9ccdb`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/tk8a50d-datasheet.pdf)