component
TK8A50D
Public Made by Adomby adom
TOSHIBA MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
| tk8a50d-etched.glb | 17d ago |
| tk8a50d-etched.step | 17d ago |
| tk8a50d-hero.glb | 17d ago |
| tk8a50d-hero.overlay.json | 17d ago |
| tk8a50d.glb | 17d ago |
| tk8a50d.kicad_mod | 17d ago |
| tk8a50d.kicad_sym | 17d ago |
| tk8a50d.lbr | 17d ago |
| tk8a50d.step | 17d ago |
TK8A50D
TOSHIBA · MOSFETs · TO-220
TK8A50D from TOSHIBA, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated ±30 V (VGSS) as an absolute maximum. |
| 2 | Drain | passive | Drain terminal; drain-source voltage is rated 500 V (VDSS), with DC drain current 8 A and pulsed drain current 32 A (1 ms pulse). |
| 3 | Source | passive | Source terminal; continuous source-drain reverse current is 8 A (IDR) and pulsed reverse current is 32 A (IDRP). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate leakage current | IGSS | -1 | 1 | μA | VGS = ±30 V, VDS = 0 V | 2 | |
| Drain cut-off current | IDSS | 10 | μA | VDS = 500 V, VGS = 0 V | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | 500 | V | ID = 10 mA, VGS = 0 V | 2 | ||
| Gate threshold voltage | Vth | 2 | 4 | V | VDS = 10 V, ID = 1 mA | 2 | |
| Drain-source ON-resistance | RDS(ON) | 0.7 | 0.85 | Ω | VGS = 10 V, ID = 4 A | 2 | |
| Forward transfer admittance | /Yfs/ | 1 | 4 | S | VDS = 10 V, ID = 4 A | 2 | |
| Continuous drain reverse current (Note 1) | IDR | 8 | A | 2 | |||
| Pulse drain reverse current (Note 1) | IDRP | 32 | A | 2 | |||
| Forward voltage (diode) | VDSF | -1.7 | V | IDR = 8 A, VGS = 0 V | 2 | ||
| Drain-source voltage | VDSS | 500 | V | Ta = 25°C | 1 | ||
| Gate-source voltage | VGSS | -30 | 30 | V | 1 | ||
| Drain current DC (Note 1) | ID | 8 | A | DC | 1 | ||
| Drain current pulse (Note 1) | IDP | 32 | A | Pulse (t = 1 ms) | 1 | ||
| Drain power dissipation | PD | 40 | W | Tc = 25°C | 1 | ||
| Single pulse avalanche energy (Note 2) | EAS | 165 | mJ | VDD = 90 V, Tch = 25°C (initial), L = 4.4 mH, RG = 25 Ω, IAR = 8 A | 1 | ||
| Avalanche current | IAR | 8 | A | 1 | |||
| Repetitive avalanche energy (Note 3) | EAR | 4 | mJ | 1 | |||
| Channel temperature | Tch | 150 | °C | 1 | |||
| Storage temperature range | Tstg | -55 | 150 | °C | 1 | ||
| Thermal resistance, channel to case | Rth (ch-c) | 3.125 | °C/W | 1 | |||
| Thermal resistance, channel to ambient | Rth (ch-a) | 62.5 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
TK8A50D - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
tk8a50d-etched.step/tk8a50d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tk8a50d.step/tk8a50d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (6 pp, sha256
b8d7c7a544f9ccdb, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).