component
TK560P60Y
Public Made by Adomby adom
TOSHIBA MOSFETs, DPAK. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
← Commit history
page.json+7−4@@ -32,19 +32,19 @@ "number": "1", "name": "G", "type": "input",- "description": "Gate. Insulated MOS gate; controls channel conduction between drain and source. Absolute maximum VGSS = \u00b130 V; enhancement threshold Vth = 3 to 4 V (VDS = 10 V, ID = 0.24 mA). ESD sensitive."+ "description": "Gate. Insulated MOS gate; controls channel conduction between drain and source. Absolute maximum VGSS = ±30 V; enhancement threshold Vth = 3 to 4 V (VDS = 10 V, ID = 0.24 mA). ESD sensitive." }, { "number": "2", "name": "D", "type": "passive",- "description": "Drain. High-voltage terminal of the N-channel MOSFET, also connected to the tab (heat-sinking pad). Rated VDSS = 600 V, ID = 7 A (Tc = 25 \u00b0C), IDP = 28 A pulsed."+ "description": "Drain. High-voltage terminal of the N-channel MOSFET, also connected to the tab (heat-sinking pad). Rated VDSS = 600 V, ID = 7 A (Tc = 25 °C), IDP = 28 A pulsed." }, { "number": "3", "name": "S", "type": "passive",- "description": "Source. Return terminal of the N-channel MOSFET channel and cathode reference for the intrinsic body diode. Body diode VDSF \u2248 -1.7 V max at IDR = 7 A."+ "description": "Source. Return terminal of the N-channel MOSFET channel and cathode reference for the intrinsic body diode. Body diode VDSF ≈ -1.7 V max at IDR = 7 A." } ], "provenance": {@@ -109,5 +109,8 @@ "docs/tk560p60y-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }