component
TK560P60Y
Public Made by Adomby adom
TOSHIBA MOSFETs, DPAK. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTK560P60Y
TOSHIBA · MOSFETs · DPAK
TK560P60Y from TOSHIBA, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate. Insulated MOS gate; controls channel conduction between drain and source. Absolute maximum VGSS = ±30 V; enhancement threshold Vth = 3 to 4 V (VDS = 10 V, ID = 0.24 mA). ESD sensitive. |
| 2 | D | passive | Drain. High-voltage terminal of the N-channel MOSFET, also connected to the tab (heat-sinking pad). Rated VDSS = 600 V, ID = 7 A (Tc = 25 °C), IDP = 28 A pulsed. |
| 3 | S | passive | Source. Return terminal of the N-channel MOSFET channel and cathode reference for the intrinsic body diode. Body diode VDSF ≈ -1.7 V max at IDR = 7 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | DPAK |
| Category | Transistors/Thyristors |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
TK560P60Y - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: DPAK (KiCad packages3D, STEP)
- 3D model files:
tk560p60y-etched.step/tk560p60y-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tk560p60y.step/tk560p60y.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (None pp, sha256
62b9bc544751c7f3, retrieved 2026-08-17, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).