component
TK3P80E
Public Made by Adomby adom
TOSHIBA MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTK3P80E
TOSHIBA · MOSFETs · DPAK
TK3P80E from TOSHIBA, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | MOSFET gate terminal; the gate-source voltage is rated at ±30 V (VGSS) absolute maximum. |
| 2 | Drain | passive | Drain terminal, also the heatsink tab; the drain-source voltage is rated at 800 V (VDSS) absolute maximum and DC drain current at 3 A. |
| 3 | Source | passive | Source terminal, the reference for the gate drive; reverse (body diode) DC current is rated at 3 A (IDR). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | DPAK |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate leakage current | IGSS | -1 | 1 | µA | VGS = ±30 V, VDS = 0 V | 3 | |
| Drain cut-off current | IDSS | 10 | µA | VDS = 640 V, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 800 | V | ID = 10 mA, VGS = 0 V | 3 | ||
| Gate threshold voltage | Vth | 2.5 | 4 | V | VDS = 10 V, ID = 0.3 mA | 3 | |
| Drain-source on-resistance | RDS(ON) | 3.9 | 4.9 | Ω | VGS = 10 V, ID = 1.5 A | 3 | |
| MOSFET dv/dt ruggedness | dv/dt | 10 | V/ns | VDD = 0 to 400 V, ID = 3 A | 3 | ||
| Diode forward voltage | VDSF | -1.7 | V | IDR = 3 A, VGS = 0 V | 3 | ||
| Drain-source voltage | VDSS | 800 | V | 1 | |||
| Gate-source voltage | VGSS | -30 | 30 | V | 1 | ||
| Drain current (DC) | ID | 3 | A | Tc = 25 °C | 1 | ||
| Drain current (pulsed) | IDP | 9 | A | 1 | |||
| Power dissipation | PD | 80 | W | Tc = 25 °C | 1 | ||
| Avalanche current | IAR | 3 | A | 1 | |||
| Reverse drain current (DC) | IDR | 3 | A | 1 | |||
| Reverse drain current (pulsed) | IDRP | 9 | A | 1 | |||
| Channel temperature | Tch | 150 | °C | 1 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 1 | ||
| Channel-to-case thermal resistance | Rth(ch-c) | 1.56 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
TK3P80E - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: DPAK (KiCad packages3D, STEP)
- 3D model files:
tk3p80e-etched.step/tk3p80e-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tk3p80e.step/tk3p80e.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (9 pp, sha256
e002c53ba759e535, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).