component
TK380P60Y
Public Made by Adomby adom
TOSHIBA MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
TK380P60Y
TOSHIBA · MOSFETs · TO-252
TK380P60Y from TOSHIBA, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | MOSFET gate terminal; the datasheet rates gate-source voltage VGSS at ±30 V. |
| 2 | Drain | passive | MOSFET drain terminal; the datasheet rates drain-source voltage VDSS at 600 V and DC drain current ID at 9.7 A (Tc = 25 °C). |
| 3 | Source | passive | MOSFET source terminal; the datasheet rates reverse drain current IDR at 9.7 A (DC) and the channel temperature Tch at up to 150 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate leakage current | IGSS | -1 | 1 | µA | VGS = ±30 V, VDS = 0 V | 3 | |
| Drain cut-off current | IDSS | 10 | µA | VDS = 600 V, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 600 | V | ID = 10 mA, VGS = 0 V | 3 | ||
| Gate threshold voltage | Vth | 3 | 4 | V | VDS = 10 V, ID = 0.36 mA | 3 | |
| Drain-source on-resistance | RDS(ON) | 0.29 | 0.38 | Ω | VGS = 10 V, ID = 4.9 A | 3 | |
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS ≤ V(BR)DSS, ID ≤ 4.9 A | 3 | ||
| Diode forward voltage | VDSF | -1.7 | V | IDR = 9.7 A, VGS = 0 V | 3 | ||
| Diode dv/dt ruggedness | dv/dt | 15 | V/ns | VDS ≤ 400 V, IDR ≤ 4.6 A, VGS = 0 V | 3 | ||
| Drain-source voltage | VDSS | 600 | V | 1 | |||
| Gate-source voltage | VGSS | -30 | 30 | V | 1 | ||
| Drain current (DC) | ID | 9.7 | A | Tc = 25 °C | 1 | ||
| Drain current (DC) | ID | 6.1 | A | Tc = 100 °C | 1 | ||
| Drain current (pulsed) | IDP | 38.8 | A | Note 1 | 1 | ||
| Power dissipation | PD | 80 | W | Tc = 25 °C | 1 | ||
| Single-pulse avalanche energy | EAS | 104 | mJ | Note 2: VDD = 90 V, Tch = 25 °C (initial), L = 29.2 mH, RG = 25 Ω, IAS = 2.5 A | 1 | ||
| Single-pulse avalanche current | IAS | 2.5 | A | Note 1 | 1 | ||
| Reverse drain current (DC) | IDR | 9.7 | A | Note 1 | 1 | ||
| Reverse drain current (pulsed) | IDRP | 38.8 | A | Note 1 | 1 | ||
| Channel temperature | Tch | 150 | °C | 1 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 1 | ||
| Channel-to-case thermal resistance | Rth(ch-c) | 1.56 | °C/W | 2 | |||
| Channel-to-ambient thermal resistance | Rth(ch-a) | 125 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
TK380P60Y - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
tk380p60y-etched.step/tk380p60y-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tk380p60y.step/tk380p60y.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (10 pp, sha256
5386ece4b852438d, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TK380P60Y
**TOSHIBA** · MOSFETs · TO-252
TK380P60Y from TOSHIBA, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | MOSFET gate terminal; the datasheet rates gate-source voltage VGSS at ±30 V. |
| 2 | Drain | passive | MOSFET drain terminal; the datasheet rates drain-source voltage VDSS at 600 V and DC drain current ID at 9.7 A (Tc = 25 °C). |
| 3 | Source | passive | MOSFET source terminal; the datasheet rates reverse drain current IDR at 9.7 A (DC) and the channel temperature Tch at up to 150 °C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate leakage current | IGSS | -1 | | 1 | µA | VGS = ±30 V, VDS = 0 V | 3 |
| Drain cut-off current | IDSS | | | 10 | µA | VDS = 600 V, VGS = 0 V | 3 |
| Drain-source breakdown voltage | V(BR)DSS | 600 | | | V | ID = 10 mA, VGS = 0 V | 3 |
| Gate threshold voltage | Vth | 3 | | 4 | V | VDS = 10 V, ID = 0.36 mA | 3 |
| Drain-source on-resistance | RDS(ON) | | 0.29 | 0.38 | Ω | VGS = 10 V, ID = 4.9 A | 3 |
| MOSFET dv/dt ruggedness | dv/dt | 50 | | | V/ns | VDS ≤ V(BR)DSS, ID ≤ 4.9 A | 3 |
| Diode forward voltage | VDSF | | | -1.7 | V | IDR = 9.7 A, VGS = 0 V | 3 |
| Diode dv/dt ruggedness | dv/dt | 15 | | | V/ns | VDS ≤ 400 V, IDR ≤ 4.6 A, VGS = 0 V | 3 |
| Drain-source voltage | VDSS | | | 600 | V | | 1 |
| Gate-source voltage | VGSS | -30 | | 30 | V | | 1 |
| Drain current (DC) | ID | | | 9.7 | A | Tc = 25 °C | 1 |
| Drain current (DC) | ID | | | 6.1 | A | Tc = 100 °C | 1 |
| Drain current (pulsed) | IDP | | | 38.8 | A | Note 1 | 1 |
| Power dissipation | PD | | | 80 | W | Tc = 25 °C | 1 |
| Single-pulse avalanche energy | EAS | | | 104 | mJ | Note 2: VDD = 90 V, Tch = 25 °C (initial), L = 29.2 mH, RG = 25 Ω, IAS = 2.5 A | 1 |
| Single-pulse avalanche current | IAS | | | 2.5 | A | Note 1 | 1 |
| Reverse drain current (DC) | IDR | | | 9.7 | A | Note 1 | 1 |
| Reverse drain current (pulsed) | IDRP | | | 38.8 | A | Note 1 | 1 |
| Channel temperature | Tch | | | 150 | °C | | 1 |
| Storage temperature | Tstg | -55 | | 150 | °C | | 1 |
| Channel-to-case thermal resistance | Rth(ch-c) | | | 1.56 | °C/W | | 2 |
| Channel-to-ambient thermal resistance | Rth(ch-a) | | | 125 | °C/W | | 2 |
## CAD (KiCad official)
- Symbol: `TK380P60Y`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `tk380p60y-etched.step` / `tk380p60y-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tk380p60y.step` / `tk380p60y.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [TOSHIBA datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586204017843687424) (10 pp, sha256 `5386ece4b852438d`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tk380p60y-datasheet.pdf)