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TK380P60Y

TOSHIBA · MOSFETs · TO-252

TK380P60Y from TOSHIBA, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input MOSFET gate terminal; the datasheet rates gate-source voltage VGSS at ±30 V.
2 Drain passive MOSFET drain terminal; the datasheet rates drain-source voltage VDSS at 600 V and DC drain current ID at 9.7 A (Tc = 25 °C).
3 Source passive MOSFET source terminal; the datasheet rates reverse drain current IDR at 9.7 A (DC) and the channel temperature Tch at up to 150 °C.

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate leakage current IGSS -1 1 µA VGS = ±30 V, VDS = 0 V 3
Drain cut-off current IDSS 10 µA VDS = 600 V, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSS 600 V ID = 10 mA, VGS = 0 V 3
Gate threshold voltage Vth 3 4 V VDS = 10 V, ID = 0.36 mA 3
Drain-source on-resistance RDS(ON) 0.29 0.38 Ω VGS = 10 V, ID = 4.9 A 3
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS ≤ V(BR)DSS, ID ≤ 4.9 A 3
Diode forward voltage VDSF -1.7 V IDR = 9.7 A, VGS = 0 V 3
Diode dv/dt ruggedness dv/dt 15 V/ns VDS ≤ 400 V, IDR ≤ 4.6 A, VGS = 0 V 3
Drain-source voltage VDSS 600 V 1
Gate-source voltage VGSS -30 30 V 1
Drain current (DC) ID 9.7 A Tc = 25 °C 1
Drain current (DC) ID 6.1 A Tc = 100 °C 1
Drain current (pulsed) IDP 38.8 A Note 1 1
Power dissipation PD 80 W Tc = 25 °C 1
Single-pulse avalanche energy EAS 104 mJ Note 2: VDD = 90 V, Tch = 25 °C (initial), L = 29.2 mH, RG = 25 Ω, IAS = 2.5 A 1
Single-pulse avalanche current IAS 2.5 A Note 1 1
Reverse drain current (DC) IDR 9.7 A Note 1 1
Reverse drain current (pulsed) IDRP 38.8 A Note 1 1
Channel temperature Tch 150 °C 1
Storage temperature Tstg -55 150 °C 1
Channel-to-case thermal resistance Rth(ch-c) 1.56 °C/W 2
Channel-to-ambient thermal resistance Rth(ch-a) 125 °C/W 2

CAD (KiCad official)

  • Symbol: TK380P60Y
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: tk380p60y-etched.step / tk380p60y-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tk380p60y.step / tk380p60y.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (10 pp, sha256 5386ece4b852438d, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF