# TK12A60W

**TOSHIBA** · MOSFETs · TO-220-3

TK12A60W from TOSHIBA, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; enhancement mode with Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA) and VGSS rating of ±30 V. |
| 2 | D | passive | Drain; VDSS = 600 V, ID = 11.5 A DC (46 A pulsed). |
| 3 | S | passive | Source; reverse drain (body diode) current IDR = 11.5 A DC (46 A pulsed). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TO-220-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-source voltage | VGSS | -30 |  | 30 | V |  | 1 |
| Drain-source voltage | VDSS |  |  | 600 | V |  | 1 |
| Drain current (DC) | ID |  |  | 11.5 | A | Tc = 25 | 1 |
| Drain current (pulsed) | IDP |  |  | 46 | A | Note 1 | 1 |
| Power dissipation | PD |  |  | 35 | W | Tc = 25 | 1 |
| Single-pulse avalanche energy | EAS |  |  | 180 | mJ | Note 2 | 1 |
| Avalanche current | IAR |  |  | 3 | A | Note 1 | 1 |
| Reverse drain current (DC) | IDR |  |  | 11.5 | A | Note 1 | 1 |
| Reverse drain current (pulsed) | IDRP |  |  | 46 | A | Note 1 | 1 |
| Channel temperature | Tch |  |  | 150 |  |  | 1 |
| Storage temperature | Tstg | -55 |  | 150 |  |  | 1 |
| Isolation voltage (RMS) | VISO(RMS) |  |  | 2000 | V | t = 1.0 s | 1 |
| Mounting torque | TOR |  |  | 0.6 | Nm |  | 1 |
| Channel-to-case thermal resistance | Rth(ch-c) |  |  | 3.57 | /W |  | 2 |
| Channel-to-ambient thermal resistance | Rth(ch-a) |  |  | 62.5 | /W |  | 2 |
| Gate leakage current | IGSS | -1 |  | 1 | µA | VGS = ±30 V, VDS = 0 V | 3 |
| Drain cut-off current | IDSS |  |  | 10 | µA | VDS = 600 V, VGS = 0 V | 3 |
| Drain-source breakdown voltage | V(BR)DSS | 600 |  |  | V | ID = 10 mA, VGS = 0 V | 3 |
| Gate threshold voltage | Vth | 2.7 |  | 3.7 | V | VDS = 10 V, ID = 0.6 mA | 3 |
| Drain-source on-resistance | RDS(ON) |  | 0.265 | 0.3 | Ω | VGS = 10 V, ID = 5.8 A | 3 |
| MOSFET dv/dt ruggedness | dv/dt | 50 |  |  | V/ns | VDD = 0 to 400 V, ID = 5.8 A | 3 |
| Diode forward voltage | VDSF |  |  | -1.7 | V | IDR = 11.5 A, VGS = 0 V | 3 |
| Diode dv/dt ruggedness | dv/dt | 15 |  |  | V/ns | IDR = 5.8 A, VGS = 0 V, VDD = 400 V | 3 |

## CAD (KiCad official)

- Symbol: `TK12A60W`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220-3 (KiCad packages3D, STEP)
- 3D model files: `tk12a60w-etched.step` / `tk12a60w-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tk12a60w.step` / `tk12a60w.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [TOSHIBA datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590006104185995264) (10 pp, sha256 `ccddc97b33be24d9`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/tk12a60w-datasheet.pdf)