component
TK12A60W
Public Made by Adomby adom
TOSHIBA MOSFETs, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 6d ago |
| viewers | 6d ago |
| package.json | 6d ago |
| page.json | 6d ago |
| README.md | 6d ago |
| tk12a60w-etched.glb | 6d ago |
| tk12a60w-etched.step | 6d ago |
| tk12a60w-hero.glb | 6d ago |
| tk12a60w-hero.overlay.json | 6d ago |
| tk12a60w.glb | 6d ago |
| tk12a60w.kicad_mod | 6d ago |
| tk12a60w.kicad_sym | 6d ago |
| tk12a60w.lbr | 6d ago |
| tk12a60w.step | 6d ago |
TK12A60W
TOSHIBA · MOSFETs · TO-220-3
TK12A60W from TOSHIBA, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; enhancement mode with Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA) and VGSS rating of ±30 V. |
| 2 | D | passive | Drain; VDSS = 600 V, ID = 11.5 A DC (46 A pulsed). |
| 3 | S | passive | Source; reverse drain (body diode) current IDR = 11.5 A DC (46 A pulsed). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TO-220-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-source voltage | VGSS | -30 | 30 | V | 1 | ||
| Drain-source voltage | VDSS | 600 | V | 1 | |||
| Drain current (DC) | ID | 11.5 | A | Tc = 25 | 1 | ||
| Drain current (pulsed) | IDP | 46 | A | Note 1 | 1 | ||
| Power dissipation | PD | 35 | W | Tc = 25 | 1 | ||
| Single-pulse avalanche energy | EAS | 180 | mJ | Note 2 | 1 | ||
| Avalanche current | IAR | 3 | A | Note 1 | 1 | ||
| Reverse drain current (DC) | IDR | 11.5 | A | Note 1 | 1 | ||
| Reverse drain current (pulsed) | IDRP | 46 | A | Note 1 | 1 | ||
| Channel temperature | Tch | 150 | 1 | ||||
| Storage temperature | Tstg | -55 | 150 | 1 | |||
| Isolation voltage (RMS) | VISO(RMS) | 2000 | V | t = 1.0 s | 1 | ||
| Mounting torque | TOR | 0.6 | Nm | 1 | |||
| Channel-to-case thermal resistance | Rth(ch-c) | 3.57 | /W | 2 | |||
| Channel-to-ambient thermal resistance | Rth(ch-a) | 62.5 | /W | 2 | |||
| Gate leakage current | IGSS | -1 | 1 | µA | VGS = ±30 V, VDS = 0 V | 3 | |
| Drain cut-off current | IDSS | 10 | µA | VDS = 600 V, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 600 | V | ID = 10 mA, VGS = 0 V | 3 | ||
| Gate threshold voltage | Vth | 2.7 | 3.7 | V | VDS = 10 V, ID = 0.6 mA | 3 | |
| Drain-source on-resistance | RDS(ON) | 0.265 | 0.3 | Ω | VGS = 10 V, ID = 5.8 A | 3 | |
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDD = 0 to 400 V, ID = 5.8 A | 3 | ||
| Diode forward voltage | VDSF | -1.7 | V | IDR = 11.5 A, VGS = 0 V | 3 | ||
| Diode dv/dt ruggedness | dv/dt | 15 | V/ns | IDR = 5.8 A, VGS = 0 V, VDD = 400 V | 3 |
CAD (KiCad official)
- Symbol:
TK12A60W - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220-3 (KiCad packages3D, STEP)
- 3D model files:
tk12a60w-etched.step/tk12a60w-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tk12a60w.step/tk12a60w.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (10 pp, sha256
ccddc97b33be24d9, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).