# TK10A60D

**TOSHIBA** · MOSFETs · TO-220

TK10A60D from TOSHIBA, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the MOSFET; gate-source voltage is rated at ±30 V (VGSS, absolute maximum). |
| 2 | Drain | passive | Drain terminal of the MOSFET; drain-source voltage is rated at 600 V (VDSS, absolute maximum) and drain current at 10 A DC / 40 A pulsed. |
| 3 | Source | passive | Source terminal of the MOSFET, the reference for the gate-source voltage and drain current ratings. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS |  |  | 600 | V |  | 1 |
| Gate-source voltage | VGSS | -30 |  | 30 | V |  | 1 |
| Drain current DC | ID |  |  | 10 | A | Note 1 | 1 |
| Drain current pulse | IDP |  |  | 40 | A | Note 1 | 1 |
| Drain power dissipation | PD |  |  | 45 | W | Tc = 25°C | 1 |
| Single pulse avalanche energy | EAS |  |  | 363 | mJ | Note 2: VDD = 90 V, Tch = 25°C (initial), L = 6.36 mH, RG = 25 Ω, IAR = 10 A | 1 |
| Avalanche current | IAR |  |  | 10 | A |  | 1 |
| Repetitive avalanche energy | EAR |  |  | 4.5 | mJ | Note 3: Repetitive rating: pulse width limited by maximum channel temperature | 1 |
| Channel temperature | Tch |  |  | 150 | °C |  | 1 |
| Storage temperature range | Tstg | -55 |  | 150 | °C |  | 1 |
| Thermal resistance, channel to case | Rth (ch-c) |  |  | 2.78 | °C/W |  | 1 |
| Thermal resistance, channel to ambient | Rth (ch-a) |  |  | 62.5 | °C/W |  | 1 |
| Gate leakage current | IGSS | -1 |  | 1 | μA | VGS = ±30 V, VDS = 0 V | 2 |
| Drain cut-off current | IDSS |  |  | 10 | μA | VDS = 600 V, VGS = 0 V | 2 |
| Drain-source breakdown voltage | V (BR) DSS | 600 |  |  | V | ID = 10 mA, VGS = 0 V | 2 |
| Gate threshold voltage | Vth | 2 |  | 4 | V | VDS = 10 V, ID = 1 mA | 2 |
| Drain-source ON-resistance | RDS (ON) |  | 0.58 | 0.75 | Ω | VGS = 10 V, ID = 5 A | 2 |
| Forward transfer admittance | /Yfs/ | 1.5 | 6 |  | S | VDS = 10 V, ID = 5 A | 2 |
| Continuous drain reverse current | IDR |  |  | 10 | A | Note 1 | 2 |
| Pulse drain reverse current | IDRP |  |  | 40 | A | Note 1 | 2 |
| Forward voltage (diode) | VDSF |  |  | -1.7 | V | IDR = 10 A, VGS = 0 V | 2 |

## CAD (KiCad official)

- Symbol: `TK10A60D`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `tk10a60d-etched.step` / `tk10a60d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tk10a60d.step` / `tk10a60d.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [TOSHIBA datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590183260434436096) (6 pp, sha256 `81d9b722fe1c8912`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/tk10a60d-datasheet.pdf)