component
TK10A60D
Public Made by Adomby adom
TOSHIBA MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTK10A60D
TOSHIBA · MOSFETs · TO-220
TK10A60D from TOSHIBA, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the MOSFET; gate-source voltage is rated at ±30 V (VGSS, absolute maximum). |
| 2 | Drain | passive | Drain terminal of the MOSFET; drain-source voltage is rated at 600 V (VDSS, absolute maximum) and drain current at 10 A DC / 40 A pulsed. |
| 3 | Source | passive | Source terminal of the MOSFET, the reference for the gate-source voltage and drain current ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | 600 | V | 1 | |||
| Gate-source voltage | VGSS | -30 | 30 | V | 1 | ||
| Drain current DC | ID | 10 | A | Note 1 | 1 | ||
| Drain current pulse | IDP | 40 | A | Note 1 | 1 | ||
| Drain power dissipation | PD | 45 | W | Tc = 25°C | 1 | ||
| Single pulse avalanche energy | EAS | 363 | mJ | Note 2: VDD = 90 V, Tch = 25°C (initial), L = 6.36 mH, RG = 25 Ω, IAR = 10 A | 1 | ||
| Avalanche current | IAR | 10 | A | 1 | |||
| Repetitive avalanche energy | EAR | 4.5 | mJ | Note 3: Repetitive rating: pulse width limited by maximum channel temperature | 1 | ||
| Channel temperature | Tch | 150 | °C | 1 | |||
| Storage temperature range | Tstg | -55 | 150 | °C | 1 | ||
| Thermal resistance, channel to case | Rth (ch-c) | 2.78 | °C/W | 1 | |||
| Thermal resistance, channel to ambient | Rth (ch-a) | 62.5 | °C/W | 1 | |||
| Gate leakage current | IGSS | -1 | 1 | μA | VGS = ±30 V, VDS = 0 V | 2 | |
| Drain cut-off current | IDSS | 10 | μA | VDS = 600 V, VGS = 0 V | 2 | ||
| Drain-source breakdown voltage | V (BR) DSS | 600 | V | ID = 10 mA, VGS = 0 V | 2 | ||
| Gate threshold voltage | Vth | 2 | 4 | V | VDS = 10 V, ID = 1 mA | 2 | |
| Drain-source ON-resistance | RDS (ON) | 0.58 | 0.75 | Ω | VGS = 10 V, ID = 5 A | 2 | |
| Forward transfer admittance | /Yfs/ | 1.5 | 6 | S | VDS = 10 V, ID = 5 A | 2 | |
| Continuous drain reverse current | IDR | 10 | A | Note 1 | 2 | ||
| Pulse drain reverse current | IDRP | 40 | A | Note 1 | 2 | ||
| Forward voltage (diode) | VDSF | -1.7 | V | IDR = 10 A, VGS = 0 V | 2 |
CAD (KiCad official)
- Symbol:
TK10A60D - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
tk10a60d-etched.step/tk10a60d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tk10a60d.step/tk10a60d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (6 pp, sha256
81d9b722fe1c8912, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).