# TJ30S06M3L

**TOSHIBA** · MOSFETs · DPAK

TJ30S06M3L from TOSHIBA, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; the datasheet rates the gate-source voltage at VGSS -20/+10 V (absolute maximum) and specifies VGS = -10 V for on-resistance testing. |
| 2 | Drain (heatsink) | passive | Drain terminal, also the heatsink tab; the drain-source voltage is rated VDSS -60 V (absolute maximum). |
| 3 | Source | passive | Source terminal; the datasheet rates the drain current at ID -30 A (DC) and the channel temperature at Tch 175 °C maximum. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | DPAK |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS |  |  | -60 | V |  | 2 |
| Gate-source voltage | VGSS | -20 |  | 10 | V |  | 2 |
| Drain current (DC) | ID |  |  | -30 | A |  | 2 |
| Drain current (pulsed) | IDP |  |  | -60 | A |  | 2 |
| Power dissipation | PD |  |  | 68 | W |  | 2 |
| Single-pulse avalanche energy | EAS |  |  | 71 | mJ |  | 2 |
| Avalanche current | IAR |  |  | -30 | A |  | 2 |
| Channel temperature | Tch |  |  | 175 | °C |  | 2 |
| Storage temperature | Tstg | -55 |  | 175 | °C |  | 2 |
| Channel-to-case thermal resistance | Rth(ch-c) |  |  | 2.2 | /W |  | 2 |
| Gate leakage current | IGSS | -10 |  | 10 | µA | VGS = -16/+10 V, VDS = 0 V | 3 |
| Drain cut-off current | IDSS |  |  | -10 | µA | VDS = -60 V, VGS = 0 V | 3 |
| Drain-source breakdown voltage | V(BR)DSS | -60 |  |  | V | ID = -10 mA, VGS = 0 V | 3 |
| Drain-source breakdown voltage | V(BR)DSX | -50 |  |  | V | ID = -10 mA, VGS = 10 V | 3 |
| Gate threshold voltage | Vth | -2 |  | -3 | V | VDS = -10 V, ID = -1 mA | 3 |
| Drain-source on-resistance | RDS(ON) |  | 19 | 28 | mΩ | VGS = -6 V, ID = -15 A | 3 |
| Drain-source on-resistance | RDS(ON) |  | 16.8 | 21.8 | mΩ | VGS = -10 V, ID = -15 A | 3 |
| Reverse drain current (DC) | IDR |  |  | -30 | A |  | 3 |
| Reverse drain current (pulsed) | IDRP |  |  | -60 | A |  | 3 |
| Diode forward voltage | VDSF |  |  | 1.2 | V | IDR = -30 A, VGS = 0 V | 3 |

## CAD (KiCad official)

- Symbol: `TJ30S06M3L`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: DPAK (KiCad packages3D, STEP)
- 3D model files: `tj30s06m3l-etched.step` / `tj30s06m3l-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tj30s06m3l.step` / `tj30s06m3l.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [TOSHIBA datasheet](docs/tj30s06m3l-datasheet.pdf) (9 pp, sha256 `b1dd76cba39a449c`, retrieved 2026-11-02, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/tj30s06m3l-datasheet.pdf)