component
TJ30S06M3L
Public Made by Adomby adom
TOSHIBA MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
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| viewers | 4d ago |
| package.json | 4d ago |
| page.json | 4d ago |
| README.md | 4d ago |
| tj30s06m3l-etched.glb | 4d ago |
| tj30s06m3l-etched.step | 4d ago |
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| tj30s06m3l-hero.overlay.json | 4d ago |
| tj30s06m3l.glb | 4d ago |
| tj30s06m3l.kicad_mod | 4d ago |
| tj30s06m3l.kicad_sym | 4d ago |
| tj30s06m3l.lbr | 4d ago |
| tj30s06m3l.step | 4d ago |
| verification.json | 4d ago |
TJ30S06M3L
TOSHIBA · MOSFETs · DPAK
TJ30S06M3L from TOSHIBA, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; the datasheet rates the gate-source voltage at VGSS -20/+10 V (absolute maximum) and specifies VGS = -10 V for on-resistance testing. |
| 2 | Drain (heatsink) | passive | Drain terminal, also the heatsink tab; the drain-source voltage is rated VDSS -60 V (absolute maximum). |
| 3 | Source | passive | Source terminal; the datasheet rates the drain current at ID -30 A (DC) and the channel temperature at Tch 175 °C maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | DPAK |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | -60 | V | 2 | |||
| Gate-source voltage | VGSS | -20 | 10 | V | 2 | ||
| Drain current (DC) | ID | -30 | A | 2 | |||
| Drain current (pulsed) | IDP | -60 | A | 2 | |||
| Power dissipation | PD | 68 | W | 2 | |||
| Single-pulse avalanche energy | EAS | 71 | mJ | 2 | |||
| Avalanche current | IAR | -30 | A | 2 | |||
| Channel temperature | Tch | 175 | °C | 2 | |||
| Storage temperature | Tstg | -55 | 175 | °C | 2 | ||
| Channel-to-case thermal resistance | Rth(ch-c) | 2.2 | /W | 2 | |||
| Gate leakage current | IGSS | -10 | 10 | µA | VGS = -16/+10 V, VDS = 0 V | 3 | |
| Drain cut-off current | IDSS | -10 | µA | VDS = -60 V, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | -60 | V | ID = -10 mA, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage | V(BR)DSX | -50 | V | ID = -10 mA, VGS = 10 V | 3 | ||
| Gate threshold voltage | Vth | -2 | -3 | V | VDS = -10 V, ID = -1 mA | 3 | |
| Drain-source on-resistance | RDS(ON) | 19 | 28 | mΩ | VGS = -6 V, ID = -15 A | 3 | |
| Drain-source on-resistance | RDS(ON) | 16.8 | 21.8 | mΩ | VGS = -10 V, ID = -15 A | 3 | |
| Reverse drain current (DC) | IDR | -30 | A | 3 | |||
| Reverse drain current (pulsed) | IDRP | -60 | A | 3 | |||
| Diode forward voltage | VDSF | 1.2 | V | IDR = -30 A, VGS = 0 V | 3 |
CAD (KiCad official)
- Symbol:
TJ30S06M3L - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: DPAK (KiCad packages3D, STEP)
- 3D model files:
tj30s06m3l-etched.step/tj30s06m3l-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tj30s06m3l.step/tj30s06m3l.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (9 pp, sha256
b1dd76cba39a449c, retrieved 2026-11-02, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).