component
TISP4240M3BJR-S
Public Made by Adomby adom
BOURNS Pre-ordered transistors, DO-214AA. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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TISP4240M3BJR-S
BOURNS · Pre-ordered transistors · DO-214AA
TISP4240M3BJR-S from BOURNS, in a DO-214AA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | R(B) | passive | Terminal R (alternative line designator B) of the bidirectional thyristor; the device is symmetrical, with VDRM ±180 V and V(BO) ±240 V for the '4240 and all measurements referenced to R. |
| 2 | T(A) | passive | Terminal T (alternative line designator A) of the bidirectional thyristor; the device is symmetrical, with VDRM ±180 V and V(BO) ±240 V for the '4240, and terminal 1 is not marked on the package. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | BOURNS |
| Package | DO-214AA |
| Category | Transistors |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak off-state voltage ('4240) | VDRM | -180 | 180 | V | 2 | ||
| Repetitive peak off-state current, TA = 25 °C | IDRM | -5 | 5 | μA | VD = VDRM, TA = 25 °C | 3 | |
| Repetitive peak off-state current, TA = 85 °C | IDRM | -10 | 10 | μA | VD = VDRM, TA = 85 °C | 3 | |
| Breakover voltage ('4240) | V(BO) | -240 | 240 | V | dv/dt = ±250 V/ms, RSOURCE = 300 Ω | 3 | |
| Impulse breakover voltage ('4240) | V(BO) | -247 | 247 | V | dv/dt ≤ ±1000 V/μs, Linear voltage ramp, Maximum ramp value = ±500 V; di/dt = ±20 A/μs, Linear current ramp, Maximum ramp value = ±10 A | 3 | |
| Breakover current | I(BO) | 0.15 | 0.6 | A | dv/dt = ±250 V/ms, RSOURCE = 300 Ω | 3 | |
| On-state voltage | VT | -3 | 3 | V | IT = ±5 A, tW = 100 μs | 3 | |
| Holding current | IH | 0.15 | 0.35 | A | IT = ±5 A, di/dt = +/-30 mA/ms | 3 | |
| Critical rate of rise of off-state voltage | dv/dt | -5 | 5 | kV/μs | Linear voltage ramp, Maximum ramp value < 0.85VDRM | 3 | |
| Off-state current | ID | -10 | 10 | μA | VD = ±50 V, TA = 85 °C | 3 | |
| Off-state capacitance ('4240 thru '4400), VD = 0 | Coff | 72 | 87 | pF | f = 1 MHz, Vd = 1 V rms, VD = 0 | 4 | |
| Off-state capacitance ('4240 thru '4400), VD = -1 V | Coff | 52 | 62 | pF | f = 1 MHz, Vd = 1 V rms, VD = -1 V | 4 | |
| Off-state capacitance ('4240 thru '4400), VD = -2 V | Coff | 42 | 50 | pF | f = 1 MHz, Vd = 1 V rms, VD = -2 V | 4 | |
| Off-state capacitance ('4240 thru '4400), VD = -50 V | Coff | 19 | 22 | pF | f = 1 MHz, Vd = 1 V rms, VD = -50 V | 4 | |
| Off-state capacitance ('4240 thru '4400), VD = -100 V | Coff | 15 | 18 | pF | f = 1 MHz, Vd = 1 V rms, VD = -100 V | 4 | |
| Non-repetitive peak on-state pulse current, 2/10 μs | ITSP | 300 | A | 2/10 μs (GR-1089-CORE, 2/10 μs voltage wave shape) | 2 | ||
| Non-repetitive peak on-state pulse current, 8/20 μs | ITSP | 220 | A | 8/20 μs (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) | 2 | ||
| Non-repetitive peak on-state pulse current, 10/160 μs | ITSP | 120 | A | 10/160 μs (FCC Part 68, 10/160 μs voltage wave shape) | 2 | ||
| Non-repetitive peak on-state pulse current, 5/200 μs | ITSP | 110 | A | 5/200 μs (VDE 0433, 10/700 μs voltage wave shape) | 2 | ||
| Non-repetitive peak on-state pulse current, 0.2/310 μs | ITSP | 100 | A | 0.2/310 μs (I3124, 0.5/700 μs voltage wave shape) | 2 | ||
| Non-repetitive peak on-state pulse current, 5/310 μs (ITU-T K.20/21/45, K.44) | ITSP | 100 | A | 5/310 μ (ITU-T K.20/21/45, K.44 10/700 μs voltage wave shape) | 2 | ||
| Non-repetitive peak on-state pulse current, 5/310 μs (FTZ R12) | ITSP | 100 | A | 5/310 μs (FTZ R12, 10/700 μs voltage wave shape) | 2 | ||
| Non-repetitive peak on-state pulse current, 10/560 μs | ITSP | 75 | A | 10/560 μs (FCC Part 68, 10/560 μs voltage wave shape) | 2 | ||
| Non-repetitive peak on-state pulse current, 10/1000 μs | ITSP | 50 | A | 10/1000 μs (GR-1089-CORE, 10/1000 μs voltage wave shape) | 2 | ||
| Non-repetitive peak on-state current, 20 ms | ITSM | 30 | A | 20 ms (50 Hz) full sine wave | 2 | ||
| Non-repetitive peak on-state current, 16.7 ms | ITSM | 32 | A | 16.7 ms (60 Hz) full sine wave | 2 | ||
| Non-repetitive peak on-state current, 1000 s | ITSM | 2.1 | A | 1000 s 50 Hz/60 Hz a.c. | 2 | ||
| Initial rate of rise of on-state current | diT/dt | 300 | A/μs | Exponential current ramp, Maximum ramp value < 100 A | 2 | ||
| Junction temperature | TJ | -40 | 150 | °C | 2 | ||
| Storage temperature range | Tstg | -65 | 150 | °C | 2 | ||
| Junction to free air thermal resistance (EIA/JESD51-3 PCB) | RθJA | 115 | °C/W | EIA/JESD51-3 PCB, IT = ITSM(1000), TA = 25 °C | 4 | ||
| Junction to free air thermal resistance (265 mm x 210 mm populated line card, 4-layer PCB) | RθJA | 52 | °C/W | 265 mm x 210 mm populated line card, 4-layer PCB, IT = ITSM(1000), TA = 25 °C | 4 |
CAD (KiCad official)
- Symbol:
TISP4240M3BJR-S - Footprint:
Diode_SMD:D_SMB - 3D model: DO-214AA (KiCad packages3D, STEP)
- 3D model files:
tisp4240m3bjr-s-etched.step/tisp4240m3bjr-s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tisp4240m3bjr-s.step/tisp4240m3bjr-s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: BOURNS datasheet (13 pp, sha256
0ede9159f56d1244, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TISP4240M3BJR-S
**BOURNS** · Pre-ordered transistors · DO-214AA
TISP4240M3BJR-S from BOURNS, in a DO-214AA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | R(B) | passive | Terminal R (alternative line designator B) of the bidirectional thyristor; the device is symmetrical, with VDRM ±180 V and V(BO) ±240 V for the '4240 and all measurements referenced to R. |
| 2 | T(A) | passive | Terminal T (alternative line designator A) of the bidirectional thyristor; the device is symmetrical, with VDRM ±180 V and V(BO) ±240 V for the '4240, and terminal 1 is not marked on the package. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | BOURNS |
| Package | DO-214AA |
| Category | Transistors |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak off-state voltage ('4240) | VDRM | -180 | | 180 | V | | 2 |
| Repetitive peak off-state current, TA = 25 °C | IDRM | -5 | | 5 | μA | VD = VDRM, TA = 25 °C | 3 |
| Repetitive peak off-state current, TA = 85 °C | IDRM | -10 | | 10 | μA | VD = VDRM, TA = 85 °C | 3 |
| Breakover voltage ('4240) | V(BO) | -240 | | 240 | V | dv/dt = ±250 V/ms, RSOURCE = 300 Ω | 3 |
| Impulse breakover voltage ('4240) | V(BO) | -247 | | 247 | V | dv/dt ≤ ±1000 V/μs, Linear voltage ramp, Maximum ramp value = ±500 V; di/dt = ±20 A/μs, Linear current ramp, Maximum ramp value = ±10 A | 3 |
| Breakover current | I(BO) | 0.15 | 0.6 | | A | dv/dt = ±250 V/ms, RSOURCE = 300 Ω | 3 |
| On-state voltage | VT | -3 | | 3 | V | IT = ±5 A, tW = 100 μs | 3 |
| Holding current | IH | 0.15 | 0.35 | | A | IT = ±5 A, di/dt = +/-30 mA/ms | 3 |
| Critical rate of rise of off-state voltage | dv/dt | -5 | | 5 | kV/μs | Linear voltage ramp, Maximum ramp value < 0.85VDRM | 3 |
| Off-state current | ID | -10 | | 10 | μA | VD = ±50 V, TA = 85 °C | 3 |
| Off-state capacitance ('4240 thru '4400), VD = 0 | Coff | | 72 | 87 | pF | f = 1 MHz, Vd = 1 V rms, VD = 0 | 4 |
| Off-state capacitance ('4240 thru '4400), VD = -1 V | Coff | | 52 | 62 | pF | f = 1 MHz, Vd = 1 V rms, VD = -1 V | 4 |
| Off-state capacitance ('4240 thru '4400), VD = -2 V | Coff | | 42 | 50 | pF | f = 1 MHz, Vd = 1 V rms, VD = -2 V | 4 |
| Off-state capacitance ('4240 thru '4400), VD = -50 V | Coff | | 19 | 22 | pF | f = 1 MHz, Vd = 1 V rms, VD = -50 V | 4 |
| Off-state capacitance ('4240 thru '4400), VD = -100 V | Coff | | 15 | 18 | pF | f = 1 MHz, Vd = 1 V rms, VD = -100 V | 4 |
| Non-repetitive peak on-state pulse current, 2/10 μs | ITSP | | | 300 | A | 2/10 μs (GR-1089-CORE, 2/10 μs voltage wave shape) | 2 |
| Non-repetitive peak on-state pulse current, 8/20 μs | ITSP | | | 220 | A | 8/20 μs (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) | 2 |
| Non-repetitive peak on-state pulse current, 10/160 μs | ITSP | | | 120 | A | 10/160 μs (FCC Part 68, 10/160 μs voltage wave shape) | 2 |
| Non-repetitive peak on-state pulse current, 5/200 μs | ITSP | | | 110 | A | 5/200 μs (VDE 0433, 10/700 μs voltage wave shape) | 2 |
| Non-repetitive peak on-state pulse current, 0.2/310 μs | ITSP | | | 100 | A | 0.2/310 μs (I3124, 0.5/700 μs voltage wave shape) | 2 |
| Non-repetitive peak on-state pulse current, 5/310 μs (ITU-T K.20/21/45, K.44) | ITSP | | | 100 | A | 5/310 μ (ITU-T K.20/21/45, K.44 10/700 μs voltage wave shape) | 2 |
| Non-repetitive peak on-state pulse current, 5/310 μs (FTZ R12) | ITSP | | | 100 | A | 5/310 μs (FTZ R12, 10/700 μs voltage wave shape) | 2 |
| Non-repetitive peak on-state pulse current, 10/560 μs | ITSP | | | 75 | A | 10/560 μs (FCC Part 68, 10/560 μs voltage wave shape) | 2 |
| Non-repetitive peak on-state pulse current, 10/1000 μs | ITSP | | | 50 | A | 10/1000 μs (GR-1089-CORE, 10/1000 μs voltage wave shape) | 2 |
| Non-repetitive peak on-state current, 20 ms | ITSM | | | 30 | A | 20 ms (50 Hz) full sine wave | 2 |
| Non-repetitive peak on-state current, 16.7 ms | ITSM | | | 32 | A | 16.7 ms (60 Hz) full sine wave | 2 |
| Non-repetitive peak on-state current, 1000 s | ITSM | | | 2.1 | A | 1000 s 50 Hz/60 Hz a.c. | 2 |
| Initial rate of rise of on-state current | diT/dt | | | 300 | A/μs | Exponential current ramp, Maximum ramp value < 100 A | 2 |
| Junction temperature | TJ | -40 | | 150 | °C | | 2 |
| Storage temperature range | Tstg | -65 | | 150 | °C | | 2 |
| Junction to free air thermal resistance (EIA/JESD51-3 PCB) | RθJA | | 115 | | °C/W | EIA/JESD51-3 PCB, IT = ITSM(1000), TA = 25 °C | 4 |
| Junction to free air thermal resistance (265 mm x 210 mm populated line card, 4-layer PCB) | RθJA | | 52 | | °C/W | 265 mm x 210 mm populated line card, 4-layer PCB, IT = ITSM(1000), TA = 25 °C | 4 |
## CAD (KiCad official)
- Symbol: `TISP4240M3BJR-S`
- Footprint: `Diode_SMD:D_SMB`
- 3D model: DO-214AA (KiCad packages3D, STEP)
- 3D model files: `tisp4240m3bjr-s-etched.step` / `tisp4240m3bjr-s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tisp4240m3bjr-s.step` / `tisp4240m3bjr-s.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [BOURNS datasheet](docs/tisp4240m3bjr-s-datasheet.pdf) (13 pp, sha256 `0ede9159f56d1244`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tisp4240m3bjr-s-datasheet.pdf)