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TISP4240M3BJR-S

Public Made by Adom

by adom

BOURNS Pre-ordered transistors, DO-214AA. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TISP4240M3BJR-S

BOURNS · Pre-ordered transistors · DO-214AA

TISP4240M3BJR-S from BOURNS, in a DO-214AA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 R(B) passive Terminal R (alternative line designator B) of the bidirectional thyristor; the device is symmetrical, with VDRM ±180 V and V(BO) ±240 V for the '4240 and all measurements referenced to R.
2 T(A) passive Terminal T (alternative line designator A) of the bidirectional thyristor; the device is symmetrical, with VDRM ±180 V and V(BO) ±240 V for the '4240, and terminal 1 is not marked on the package.

Key specifications

Parameter Value
Manufacturer BOURNS
Package DO-214AA
Category Transistors
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak off-state voltage ('4240) VDRM -180 180 V 2
Repetitive peak off-state current, TA = 25 °C IDRM -5 5 μA VD = VDRM, TA = 25 °C 3
Repetitive peak off-state current, TA = 85 °C IDRM -10 10 μA VD = VDRM, TA = 85 °C 3
Breakover voltage ('4240) V(BO) -240 240 V dv/dt = ±250 V/ms, RSOURCE = 300 Ω 3
Impulse breakover voltage ('4240) V(BO) -247 247 V dv/dt ≤ ±1000 V/μs, Linear voltage ramp, Maximum ramp value = ±500 V; di/dt = ±20 A/μs, Linear current ramp, Maximum ramp value = ±10 A 3
Breakover current I(BO) 0.15 0.6 A dv/dt = ±250 V/ms, RSOURCE = 300 Ω 3
On-state voltage VT -3 3 V IT = ±5 A, tW = 100 μs 3
Holding current IH 0.15 0.35 A IT = ±5 A, di/dt = +/-30 mA/ms 3
Critical rate of rise of off-state voltage dv/dt -5 5 kV/μs Linear voltage ramp, Maximum ramp value < 0.85VDRM 3
Off-state current ID -10 10 μA VD = ±50 V, TA = 85 °C 3
Off-state capacitance ('4240 thru '4400), VD = 0 Coff 72 87 pF f = 1 MHz, Vd = 1 V rms, VD = 0 4
Off-state capacitance ('4240 thru '4400), VD = -1 V Coff 52 62 pF f = 1 MHz, Vd = 1 V rms, VD = -1 V 4
Off-state capacitance ('4240 thru '4400), VD = -2 V Coff 42 50 pF f = 1 MHz, Vd = 1 V rms, VD = -2 V 4
Off-state capacitance ('4240 thru '4400), VD = -50 V Coff 19 22 pF f = 1 MHz, Vd = 1 V rms, VD = -50 V 4
Off-state capacitance ('4240 thru '4400), VD = -100 V Coff 15 18 pF f = 1 MHz, Vd = 1 V rms, VD = -100 V 4
Non-repetitive peak on-state pulse current, 2/10 μs ITSP 300 A 2/10 μs (GR-1089-CORE, 2/10 μs voltage wave shape) 2
Non-repetitive peak on-state pulse current, 8/20 μs ITSP 220 A 8/20 μs (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 2
Non-repetitive peak on-state pulse current, 10/160 μs ITSP 120 A 10/160 μs (FCC Part 68, 10/160 μs voltage wave shape) 2
Non-repetitive peak on-state pulse current, 5/200 μs ITSP 110 A 5/200 μs (VDE 0433, 10/700 μs voltage wave shape) 2
Non-repetitive peak on-state pulse current, 0.2/310 μs ITSP 100 A 0.2/310 μs (I3124, 0.5/700 μs voltage wave shape) 2
Non-repetitive peak on-state pulse current, 5/310 μs (ITU-T K.20/21/45, K.44) ITSP 100 A 5/310 μ (ITU-T K.20/21/45, K.44 10/700 μs voltage wave shape) 2
Non-repetitive peak on-state pulse current, 5/310 μs (FTZ R12) ITSP 100 A 5/310 μs (FTZ R12, 10/700 μs voltage wave shape) 2
Non-repetitive peak on-state pulse current, 10/560 μs ITSP 75 A 10/560 μs (FCC Part 68, 10/560 μs voltage wave shape) 2
Non-repetitive peak on-state pulse current, 10/1000 μs ITSP 50 A 10/1000 μs (GR-1089-CORE, 10/1000 μs voltage wave shape) 2
Non-repetitive peak on-state current, 20 ms ITSM 30 A 20 ms (50 Hz) full sine wave 2
Non-repetitive peak on-state current, 16.7 ms ITSM 32 A 16.7 ms (60 Hz) full sine wave 2
Non-repetitive peak on-state current, 1000 s ITSM 2.1 A 1000 s 50 Hz/60 Hz a.c. 2
Initial rate of rise of on-state current diT/dt 300 A/μs Exponential current ramp, Maximum ramp value < 100 A 2
Junction temperature TJ -40 150 °C 2
Storage temperature range Tstg -65 150 °C 2
Junction to free air thermal resistance (EIA/JESD51-3 PCB) RθJA 115 °C/W EIA/JESD51-3 PCB, IT = ITSM(1000), TA = 25 °C 4
Junction to free air thermal resistance (265 mm x 210 mm populated line card, 4-layer PCB) RθJA 52 °C/W 265 mm x 210 mm populated line card, 4-layer PCB, IT = ITSM(1000), TA = 25 °C 4

CAD (KiCad official)

  • Symbol: TISP4240M3BJR-S
  • Footprint: Diode_SMD:D_SMB
  • 3D model: DO-214AA (KiCad packages3D, STEP)
  • 3D model files: tisp4240m3bjr-s-etched.step / tisp4240m3bjr-s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tisp4240m3bjr-s.step / tisp4240m3bjr-s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: BOURNS datasheet (13 pp, sha256 0ede9159f56d1244, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF