component
TDM2618
Public Made by Adomby adom
Techcode Semicon MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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TDM2618
Techcode Semicon · MOSFETs · DFN-8(5x6)
TDM2618 from Techcode Semicon, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal, tied with pins 2 and 3 to the MOSFET source; VDS rated 60 V and continuous ID 47 A at TC=25℃. |
| 2 | S | passive | Source terminal, tied with pins 1 and 3 to the MOSFET source; VDS rated 60 V and continuous ID 47 A at TC=25℃. |
| 3 | S | passive | Source terminal, tied with pins 1 and 2 to the MOSFET source; VDS rated 60 V and continuous ID 47 A at TC=25℃. |
| 4 | G | input | Gate terminal; gate-source voltage limit is ±20 V with threshold VGS(th) of 1 V min to 3 V max at 250μA. |
| 5 | D | passive | Drain terminal, tied with pins 6, 7 and 8; VDS rated 60 V and pulsed IDM 180 A at TC=25℃. |
| 6 | D | passive | Drain terminal, tied with pins 5, 7 and 8; VDS rated 60 V and pulsed IDM 180 A at TC=25℃. |
| 7 | D | passive | Drain terminal, tied with pins 5, 6 and 8; VDS rated 60 V and pulsed IDM 180 A at TC=25℃. |
| 8 | D | passive | Drain terminal, tied with pins 5, 6 and 7; VDS rated 60 V and pulsed IDM 180 A at TC=25℃. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Techcode Semicon |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | 1 | 2 | 3 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=48V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 7.5 | 9 | mΩ | VGS=10V, ID=20A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 10.5 | 13.7 | mΩ | VGS=4.5V, ID=15A | 2 | |
| Input Capacitance | Ciss | 1225 | 1600 | PF | VDS=30V, VGS=0V, F=1.0MHz | 2 | |
| Turn-on Delay Time | td(on) | 14 | 26 | nS | VDS=30V, RL=30Ω, VGEN=10V, RG=6Ω, ID=1A | 2 | |
| Turn-on Rise Time | tr | 8 | 15 | nS | 2 | ||
| Turn-Off Delay Time | td(off) | 29 | 51 | nS | 2 | ||
| Turn-Off Fall Time | tf | 26 | 47 | nS | 2 | ||
| Total Gate Charge | Qg | 20.6 | 29 | nC | VDS=30V, ID=20A, VGS=10V | 2 | |
| Diode Forward Voltage | VSD | 0.8 | 1.3 | V | VGS=0V, IS=2A | 2 | |
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | 20 | V | 1 | |||
| Diode Continuous Forward Current | IS | 23 | A | TC=25℃ | 1 | ||
| Drain Current, Continuous | ID | 47 | A | TC=25℃ | 1 | ||
| Drain Current, Continuous | ID | 30 | A | TC=100℃ | 1 | ||
| Drain Current, Current-Pulsed | IDM | 180 | A | TC=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 36.7 | W | TC=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 14.7 | W | TC=100℃ | 1 | ||
| Drain Current, Continuous | ID | 11.3 | A | TA=25℃ | 1 | ||
| Drain Current, Continuous | ID | 9 | A | TA=70℃ | 1 | ||
| Maximum Power Dissipation | PD | 2.08 | W | TA=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 1.33 | W | TA=70℃ | 1 | ||
| Avalanche Current, Single pulse | IAS | 16 | A | L=0.5mH | 1 | ||
| Avalanche Energy, Single pulse | EAS | 64 | mJ | L=0.5mH | 1 | ||
| Maximum Operating Junction Temperature | TJ | 150 | ℃ | 2 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 3.4 | ℃/W | Steady State | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 60 | ℃/W | Steady State, surface mounted on 1in² pad area (Note 2) | 1 |
CAD (KiCad official)
- Symbol:
TDM2618 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
tdm2618-etched.step/tdm2618-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tdm2618.step/tdm2618.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Techcode Semicon datasheet (8 pp, sha256
94ad5436af8afc4b, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TDM2618
**Techcode Semicon** · MOSFETs · DFN-8(5x6)
TDM2618 from Techcode Semicon, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal, tied with pins 2 and 3 to the MOSFET source; VDS rated 60 V and continuous ID 47 A at TC=25℃. |
| 2 | S | passive | Source terminal, tied with pins 1 and 3 to the MOSFET source; VDS rated 60 V and continuous ID 47 A at TC=25℃. |
| 3 | S | passive | Source terminal, tied with pins 1 and 2 to the MOSFET source; VDS rated 60 V and continuous ID 47 A at TC=25℃. |
| 4 | G | input | Gate terminal; gate-source voltage limit is ±20 V with threshold VGS(th) of 1 V min to 3 V max at 250μA. |
| 5 | D | passive | Drain terminal, tied with pins 6, 7 and 8; VDS rated 60 V and pulsed IDM 180 A at TC=25℃. |
| 6 | D | passive | Drain terminal, tied with pins 5, 7 and 8; VDS rated 60 V and pulsed IDM 180 A at TC=25℃. |
| 7 | D | passive | Drain terminal, tied with pins 5, 6 and 8; VDS rated 60 V and pulsed IDM 180 A at TC=25℃. |
| 8 | D | passive | Drain terminal, tied with pins 5, 6 and 7; VDS rated 60 V and pulsed IDM 180 A at TC=25℃. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Techcode Semicon |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | 1 | 2 | 3 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=48V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 7.5 | 9 | mΩ | VGS=10V, ID=20A | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 10.5 | 13.7 | mΩ | VGS=4.5V, ID=15A | 2 |
| Input Capacitance | Ciss | | 1225 | 1600 | PF | VDS=30V, VGS=0V, F=1.0MHz | 2 |
| Turn-on Delay Time | td(on) | | 14 | 26 | nS | VDS=30V, RL=30Ω, VGEN=10V, RG=6Ω, ID=1A | 2 |
| Turn-on Rise Time | tr | | 8 | 15 | nS | | 2 |
| Turn-Off Delay Time | td(off) | | 29 | 51 | nS | | 2 |
| Turn-Off Fall Time | tf | | 26 | 47 | nS | | 2 |
| Total Gate Charge | Qg | | 20.6 | 29 | nC | VDS=30V, ID=20A, VGS=10V | 2 |
| Diode Forward Voltage | VSD | | 0.8 | 1.3 | V | VGS=0V, IS=2A | 2 |
| Drain-Source Voltage | VDS | | | 60 | V | | 1 |
| Gate-Source Voltage | VGS | | | 20 | V | | 1 |
| Diode Continuous Forward Current | IS | | | 23 | A | TC=25℃ | 1 |
| Drain Current, Continuous | ID | | | 47 | A | TC=25℃ | 1 |
| Drain Current, Continuous | ID | | | 30 | A | TC=100℃ | 1 |
| Drain Current, Current-Pulsed | IDM | | | 180 | A | TC=25℃ | 1 |
| Maximum Power Dissipation | PD | | | 36.7 | W | TC=25℃ | 1 |
| Maximum Power Dissipation | PD | | | 14.7 | W | TC=100℃ | 1 |
| Drain Current, Continuous | ID | | | 11.3 | A | TA=25℃ | 1 |
| Drain Current, Continuous | ID | | | 9 | A | TA=70℃ | 1 |
| Maximum Power Dissipation | PD | | | 2.08 | W | TA=25℃ | 1 |
| Maximum Power Dissipation | PD | | | 1.33 | W | TA=70℃ | 1 |
| Avalanche Current, Single pulse | IAS | | | 16 | A | L=0.5mH | 1 |
| Avalanche Energy, Single pulse | EAS | | | 64 | mJ | L=0.5mH | 1 |
| Maximum Operating Junction Temperature | TJ | | | 150 | ℃ | | 2 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 2 |
| Thermal Resistance, Junction-to-Case | RθJC | | | 3.4 | ℃/W | Steady State | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | | 60 | ℃/W | Steady State, surface mounted on 1in² pad area (Note 2) | 1 |
## CAD (KiCad official)
- Symbol: `TDM2618`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `tdm2618-etched.step` / `tdm2618-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tdm2618.step` / `tdm2618.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Techcode Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588954868794986496) (8 pp, sha256 `94ad5436af8afc4b`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tdm2618-datasheet.pdf)