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TDM2618

Techcode Semicon · MOSFETs · DFN-8(5x6)

TDM2618 from Techcode Semicon, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal, tied with pins 2 and 3 to the MOSFET source; VDS rated 60 V and continuous ID 47 A at TC=25℃.
2 S passive Source terminal, tied with pins 1 and 3 to the MOSFET source; VDS rated 60 V and continuous ID 47 A at TC=25℃.
3 S passive Source terminal, tied with pins 1 and 2 to the MOSFET source; VDS rated 60 V and continuous ID 47 A at TC=25℃.
4 G input Gate terminal; gate-source voltage limit is ±20 V with threshold VGS(th) of 1 V min to 3 V max at 250μA.
5 D passive Drain terminal, tied with pins 6, 7 and 8; VDS rated 60 V and pulsed IDM 180 A at TC=25℃.
6 D passive Drain terminal, tied with pins 5, 7 and 8; VDS rated 60 V and pulsed IDM 180 A at TC=25℃.
7 D passive Drain terminal, tied with pins 5, 6 and 8; VDS rated 60 V and pulsed IDM 180 A at TC=25℃.
8 D passive Drain terminal, tied with pins 5, 6 and 7; VDS rated 60 V and pulsed IDM 180 A at TC=25℃.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Techcode Semicon
Package DFN-8(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate Threshold Voltage VGS(th) 1 2 3 V VDS=VGS, ID=250μA 2
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=48V, VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Drain-Source On-State Resistance RDS(ON) 7.5 9 mΩ VGS=10V, ID=20A 2
Drain-Source On-State Resistance RDS(ON) 10.5 13.7 mΩ VGS=4.5V, ID=15A 2
Input Capacitance Ciss 1225 1600 PF VDS=30V, VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 14 26 nS VDS=30V, RL=30Ω, VGEN=10V, RG=6Ω, ID=1A 2
Turn-on Rise Time tr 8 15 nS 2
Turn-Off Delay Time td(off) 29 51 nS 2
Turn-Off Fall Time tf 26 47 nS 2
Total Gate Charge Qg 20.6 29 nC VDS=30V, ID=20A, VGS=10V 2
Diode Forward Voltage VSD 0.8 1.3 V VGS=0V, IS=2A 2
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS 20 V 1
Diode Continuous Forward Current IS 23 A TC=25℃ 1
Drain Current, Continuous ID 47 A TC=25℃ 1
Drain Current, Continuous ID 30 A TC=100℃ 1
Drain Current, Current-Pulsed IDM 180 A TC=25℃ 1
Maximum Power Dissipation PD 36.7 W TC=25℃ 1
Maximum Power Dissipation PD 14.7 W TC=100℃ 1
Drain Current, Continuous ID 11.3 A TA=25℃ 1
Drain Current, Continuous ID 9 A TA=70℃ 1
Maximum Power Dissipation PD 2.08 W TA=25℃ 1
Maximum Power Dissipation PD 1.33 W TA=70℃ 1
Avalanche Current, Single pulse IAS 16 A L=0.5mH 1
Avalanche Energy, Single pulse EAS 64 mJ L=0.5mH 1
Maximum Operating Junction Temperature TJ 150 ℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Thermal Resistance, Junction-to-Case RθJC 3.4 ℃/W Steady State 1
Thermal Resistance, Junction-to-Ambient RθJA 60 ℃/W Steady State, surface mounted on 1in² pad area (Note 2) 1

CAD (KiCad official)

  • Symbol: TDM2618
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: tdm2618-etched.step / tdm2618-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tdm2618.step / tdm2618.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Techcode Semicon datasheet (8 pp, sha256 94ad5436af8afc4b, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF