component
TBC847B
Public Made by Adomby adom
TOSHIBA Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
| tbc847b-etched.glb | 17d ago |
| tbc847b-etched.step | 17d ago |
| tbc847b-hero.glb | 17d ago |
| tbc847b-hero.overlay.json | 17d ago |
| tbc847b.glb | 17d ago |
| tbc847b.kicad_mod | 17d ago |
| tbc847b.kicad_sym | 17d ago |
| tbc847b.lbr | 17d ago |
| tbc847b.step | 17d ago |
TBC847B
TOSHIBA · Bipolar (BJT) · SOT-23
TBC847B from TOSHIBA, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | passive | Base terminal of the NPN transistor; the absolute maximum ratings table includes a base current (IB) rating for this terminal. |
| 2 | Emitter | passive | Emitter terminal of the NPN transistor; the emitter-base voltage (VEBO) absolute maximum rating applies between this terminal and the base. |
| 3 | Collector | passive | Collector terminal of the NPN transistor; the collector-base (VCBO) and collector-emitter (VCEO) absolute maximum ratings apply to this terminal. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | 60 | V | 1 | |||
| Emitter-base voltage | VEBO | 6 | V | 1 | |||
| Collector current (DC) | IC | 150 | mA | 1 | |||
| Collector current (pulsed) | ICP | 200 | mA | 1 | |||
| Base current | IB | 30 | mA | 1 | |||
| Collector power dissipation | PC | 320 | mW | Device mounted on 25.4 mm x 25.4 mm x 1.6 mm FR4 board (Note 1) | 1 | ||
| Junction temperature | Tj | 150 | °C | 1 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 1 | ||
| Collector cut-off current | ICBO | 30 | nA | VCB = 30 V, IE = 0 mA | 2 | ||
| Emitter cut-off current | IEBO | 0.1 | µA | VEB = 6 V, IC = 0 mA | 2 | ||
| DC current gain (B rank) | hFE | 200 | 290 | 450 | VCE = 5 V, IC = 2 mA | 2 | |
| Collector-emitter saturation voltage | VCE(sat) | 0.06 | 0.2 | V | IC = 10 mA, IB = 0.5 mA | 2 | |
| Collector-emitter saturation voltage | VCE(sat) | 0.17 | 0.4 | V | IC = 100 mA, IB = 5 mA | 2 | |
| Base-emitter saturation voltage | VBE(sat) | 0.7 | 0.7 | V | IC = 10 mA, IB = 0.5 mA | 2 | |
| Base-emitter voltage | VBE | 0.58 | 0.66 | 0.77 | V | VCE = 5 V, IC = 2 mA | 2 |
| Transition frequency | fT | 100 | MHz | VCE = 5 V, IC = 10 mA, f = 100 MHz | 2 | ||
| Collector output capacitance | Cob | 3.5 | pF | VCB = 10 V, IE = 0 mA, f = 1 MHz | 2 | ||
| Emitter input capacitance | Cib | 10 | pF | VEB = 0.5 V, IC = 0 mA, f = 1 MHz | 2 |
CAD (KiCad official)
- Symbol:
TBC847B - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
tbc847b-etched.step/tbc847b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tbc847b.step/tbc847b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (5 pp, sha256
96e538bd74da4805, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).