component

TBC847B

Public Made by Adom

by adom

TOSHIBA Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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TBC847B

TOSHIBA · Bipolar (BJT) · SOT-23

TBC847B from TOSHIBA, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base passive Base terminal of the NPN transistor; the absolute maximum ratings table includes a base current (IB) rating for this terminal.
2 Emitter passive Emitter terminal of the NPN transistor; the emitter-base voltage (VEBO) absolute maximum rating applies between this terminal and the base.
3 Collector passive Collector terminal of the NPN transistor; the collector-base (VCBO) and collector-emitter (VCEO) absolute maximum ratings apply to this terminal.

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO 60 V 1
Emitter-base voltage VEBO 6 V 1
Collector current (DC) IC 150 mA 1
Collector current (pulsed) ICP 200 mA 1
Base current IB 30 mA 1
Collector power dissipation PC 320 mW Device mounted on 25.4 mm x 25.4 mm x 1.6 mm FR4 board (Note 1) 1
Junction temperature Tj 150 °C 1
Storage temperature Tstg -55 150 °C 1
Collector cut-off current ICBO 30 nA VCB = 30 V, IE = 0 mA 2
Emitter cut-off current IEBO 0.1 µA VEB = 6 V, IC = 0 mA 2
DC current gain (B rank) hFE 200 290 450 VCE = 5 V, IC = 2 mA 2
Collector-emitter saturation voltage VCE(sat) 0.06 0.2 V IC = 10 mA, IB = 0.5 mA 2
Collector-emitter saturation voltage VCE(sat) 0.17 0.4 V IC = 100 mA, IB = 5 mA 2
Base-emitter saturation voltage VBE(sat) 0.7 0.7 V IC = 10 mA, IB = 0.5 mA 2
Base-emitter voltage VBE 0.58 0.66 0.77 V VCE = 5 V, IC = 2 mA 2
Transition frequency fT 100 MHz VCE = 5 V, IC = 10 mA, f = 100 MHz 2
Collector output capacitance Cob 3.5 pF VCB = 10 V, IE = 0 mA, f = 1 MHz 2
Emitter input capacitance Cib 10 pF VEB = 0.5 V, IC = 0 mA, f = 1 MHz 2

CAD (KiCad official)

  • Symbol: TBC847B
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: tbc847b-etched.step / tbc847b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tbc847b.step / tbc847b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (5 pp, sha256 96e538bd74da4805, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF