component
T410-600B-TR
Public Made by Adomby adom
STMicroelectronics Thyristors (SCR)/Modules, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
Ray
t410-600b-tr: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain S…
6871d1a
23d ago
123456789101112131415161718192021222324252627282930313233343536373839404142434445464748495051525354555657585960616263646566676869707172737475767778798081828384858687888990919293949596979899100101102103104105106107108109110111112113114115116117118119120121122123124125126127128129130131132133134135136137138139140141142143144145146147148149150151152153154155156157158159160161162163164165166167168169170171172173174175176177178179180181182183184185186187188189190191192193194195196197198199200201202203204205206207208209210211212213214215216217218219220221222223224225226227228229230231232233234235236237238239240241242243244245246247248249250251252253254255256257258259260261262263264265266267268269270271272273274275276277278279280281282283284285286287288289290291292293294295296297298299300301302303304305306307308309310311312313314315316317318319320321322323324325326327328329330331332333334335336337338339340341342343344345346347348349350351352353354355356357358359360361362363364365366367368369370371372373374375376377378379380381382383384385386387388389390391392393394395396397398399400401402403404405406407408409410411412413414415416417418419420421422423424425426427428429430431432433434435436437438439440441442443444445446447448449450451452453454455456457458459460461462
{
"schema_version": 1,
"type": "component",
"slug": "t410-600b-tr",
"title": "T410-600B-TR",
"brief": "STMicroelectronics Thyristors (SCR)/Modules, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
"license": "CC-BY-SA-4.0",
"tags": [
"component",
"transistors-thyristors",
"t410-600b-tr",
"factory-2.0.0",
"extractor-text"
],
"component": {
"mpn": "T410-600B-TR",
"manufacturer": "STMicroelectronics",
"package": "DPAK",
"pin_count": 3,
"category": "Transistors/Thyristors",
"subcategory": "Thyristors (SCR)/Modules",
"datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590225456063811584",
"parts": {
"symbol": "t410-600b-tr.kicad_sym",
"footprint": "t410-600b-tr.kicad_mod",
"model_3d": "t410-600b-tr-etched.glb",
"model_3d_plain": "t410-600b-tr.glb",
"model_3d_step": "t410-600b-tr-etched.step",
"model_3d_step_plain": "t410-600b-tr.step",
"lbr": "t410-600b-tr.lbr"
},
"distributor_links": {
"lcsc": "C2970064"
},
"pins": [
{
"number": "1",
"name": "A1",
"type": "passive",
"description": "Main terminal 1 (anode 1), the reference terminal for gate voltage/current and other electrical characteristics (e.g., IGT, VGT measured with respect to A1)."
},
{
"number": "2",
"name": "A2",
"type": "passive",
"description": "Main terminal 2 (anode 2), internally connected to the package tab which forms the mounting/heatsink surface (Rth(j-c) = 2.6 °C/W)."
},
{
"number": "3",
"name": "G",
"type": "input",
"description": "Gate trigger input; triac turns on when gate current IGT (10 mA typ./max. 10 mA for T410, up to 4 A peak IGM) is applied, referenced to A1."
}
],
"provenance": {
"extractor": "extract_pins 0.2",
"factory_chain": {
"factory": "2.0.0",
"extractor": "extract_pins 0.2",
"primary_model": "claude-sonnet-5",
"primary_mode": "text+vision",
"consensus_model": "claude-opus-4-8",
"consensus": "agreed",
"guards": "pin_guards 0.1: passed",
"guard_notes": [
"extractor flagged: The DPAK package outline drawing (Figure 12, page 6) does not print pin numbers (1,2,3) or the lead ",
"vision extraction: provenance cannot be text-verified; needs consensus"
],
"pages_sent": 15,
"cost_usd": 0.3139,
"at": "2026-09-23T04:33:41"
},
"datasheet": {
"url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590225456063811584",
"pages": 15,
"sha256": "e28e0c1c755cad1e",
"source_tier": "lcsc"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 3,
"described": 3,
"cites_pages": true,
"refuses_to_fabricate": true
}
},
"viewers": {
"symbol": "viewers/symbol.html",
"footprint": "viewers/footprint.html"
},
"models_3d": [
{
"file": "t410-600b-tr.step",
"role": "plain",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
9.9,
6.5,
2.32
],
"zmin_mm": -0.0,
"centre_offset_mm": 0.0,
"footprint_binding": "identity",
"sha256": "3eb4c99603a4fe837c2fe9308bc174769ded87a785a0df48d2dc441432ee8b4c",
"checked": "2026-10-07",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
},
{
"file": "t410-600b-tr-etched.step",
"role": "eda",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
9.9,
6.5,
2.32
],
"zmin_mm": -0.0,
"centre_offset_mm": 0.0,
"footprint_binding": "identity",
"sha256": "157bc4e12b691f4bc1593029a9806358f358ae234a00b77f3387b4cae491e611",
"checked": "2026-10-16",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
}
]
},
"metadata": {
"specs": {
"Manufacturer": "STMicroelectronics",
"Package": "DPAK",
"Category": "Transistors/Thyristors",
"Pins": "3"
},
"characteristics": {
"version": 1,
"source": "datasheet",
"datasheet_sha256": "e28e0c1c755cad1e",
"rows": [
{
"name": "Gate trigger current (Quadrants I-II-III)",
"symbol": "IGT",
"kind": "electrical",
"unit": "mA",
"min": null,
"typ": null,
"max": 10,
"conditions": "VD = 12 V, RL = 30 Ω, I - II - III",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate trigger voltage",
"symbol": "VGT",
"kind": "electrical",
"unit": "V",
"min": null,
"typ": null,
"max": 1.3,
"conditions": "VD = 12 V, RL = 30 Ω, I - II - III",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate non-trigger voltage",
"symbol": "VGD",
"kind": "electrical",
"unit": "V",
"min": 0.2,
"typ": null,
"max": null,
"conditions": "VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C, I - II - III",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Holding current",
"symbol": "IH",
"kind": "electrical",
"unit": "mA",
"min": null,
"typ": null,
"max": 15,
"conditions": "IT = 100 mA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Latching current (Quadrant I-III)",
"symbol": "IL",
"kind": "electrical",
"unit": "mA",
"min": null,
"typ": null,
"max": 25,
"conditions": "IG = 1.2 IGT, I - III",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Latching current (Quadrant II)",
"symbol": "IL",
"kind": "electrical",
"unit": "mA",
"min": null,
"typ": null,
"max": 30,
"conditions": "IG = 1.2 IGT, II",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Critical rate of rise of off-state voltage",
"symbol": "dV/dt",
"kind": "electrical",
"unit": "V/µs",
"min": 40,
"typ": null,
"max": null,
"conditions": "VD = 67% VDRM, gate open, Tj = 125 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "On-state voltage",
"symbol": "VTM",
"kind": "electrical",
"unit": "V",
"min": null,
"typ": null,
"max": 1.56,
"conditions": "ITM = 5.5 A, tp = 380 µs, Tj = 25 °C",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Threshold voltage",
"symbol": "Vt0",
"kind": "electrical",
"unit": "V",
"min": null,
"typ": null,
"max": 0.89,
"conditions": "Tj = 125 °C",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Dynamic resistance",
"symbol": "Rd",
"kind": "electrical",
"unit": "mΩ",
"min": null,
"typ": null,
"max": 120,
"conditions": "Tj = 125 °C",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Repetitive peak off-state current",
"symbol": "IDRM, IRRM",
"kind": "electrical",
"unit": "µA",
"min": null,
"typ": null,
"max": 5,
"conditions": "VDRM = VRRM, Tj = 25 °C",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Repetitive peak off-state current",
"symbol": "IDRM, IRRM",
"kind": "electrical",
"unit": "mA",
"min": null,
"typ": null,
"max": 1,
"conditions": "VDRM = VRRM, Tj = 125 °C",
"source_page": 3,
"source": "datasheet"
},
{
"name": "RMS on-state current (full sine wave)",
"symbol": "IT(rms)",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 4,
"conditions": "Tc = 110 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Non repetitive surge peak on-state current",
"symbol": "ITSM",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 30,
"conditions": "F = 50 Hz, t = 20 ms, full cycle, Tj initial = 25 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Non repetitive surge peak on-state current",
"symbol": "ITSM",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 31,
"conditions": "F = 60 Hz, t = 16.7 ms, full cycle, Tj initial = 25 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "I²t value for fusing",
"symbol": "I²t",
"kind": "absolute_maximum",
"unit": "A²s",
"min": null,
"typ": null,
"max": 5.1,
"conditions": "tp = 10 ms",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Critical rate of rise of on-state current",
"symbol": "dI/dt",
"kind": "absolute_maximum",
"unit": "A/µs",
"min": null,
"typ": null,
"max": 50,
"conditions": "IG = 2 x IGT, tr ≤ 100 ns, F = 120 Hz, Tj = 125 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Peak gate current",
"symbol": "IGM",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 4,
"conditions": "tp = 20 µs, Tj = 125 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Average gate power dissipation",
"symbol": "PG(AV)",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 1,
"conditions": "Tj = 125 °C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Storage junction temperature range",
"symbol": "Tstg",
"kind": "absolute_maximum",
"unit": "°C",
"min": -40,
"typ": null,
"max": 150,
"conditions": "",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Operating junction temperature range",
"symbol": "Tj",
"kind": "recommended_operating",
"unit": "°C",
"min": -40,
"typ": null,
"max": 125,
"conditions": "",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Junction to case (AC) thermal resistance",
"symbol": "Rth(j-c)",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": 2.6,
"max": null,
"conditions": "IPAK, DPAK, TO-220AB",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Junction to ambient thermal resistance (DPAK)",
"symbol": "Rth(j-a)",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": 70,
"max": null,
"conditions": "S = 0.5 cm² copper surface under tab",
"source_page": 3,
"source": "datasheet"
}
]
}
},
"variants": [],
"sections": [
"hero",
"viewers",
"readme",
"breadcrumbs",
"info"
],
"discovery_triggers": [
"t410-600b-tr"
],
"discovery_pitch": "T410-600B-TR (STMicroelectronics) component page with datasheet-verified CAD.",
"author": {
"name": "Ray",
"email": "[email protected]"
},
"dependencies": {},
"hero": {
"type": "image",
"path": "docs/hero.png"
},
"files": [
"page.json",
"README.md",
"t410-600b-tr.kicad_sym",
"t410-600b-tr.kicad_mod",
"t410-600b-tr.glb",
"t410-600b-tr.step",
"t410-600b-tr.lbr",
"docs/hero.png",
"docs/t410-600b-tr-datasheet.pdf",
"viewers/symbol.html",
"viewers/footprint.html"
],
"visibility": {
"public": true
},
"updated_at": "2026-09-25T09:18:53.554Z"
}