component
T410-600B-TR
Public Made by Adomby adom
STMicroelectronics Thyristors (SCR)/Modules, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 1mo ago |
| package.json | 23d ago |
| page.json | 23d ago |
| README.md | 24d ago |
| t410-600b-tr-etched.fit.json | 1mo ago |
| t410-600b-tr-etched.glb | 23d ago |
| t410-600b-tr-etched.step | 23d ago |
| t410-600b-tr.glb | 1mo ago |
| t410-600b-tr.kicad_mod | 1mo ago |
| t410-600b-tr.kicad_sym | 1mo ago |
| t410-600b-tr.lbr | 1mo ago |
| t410-600b-tr.step | 1mo ago |
T410-600B-TR
STMicroelectronics · Thyristors (SCR)/Modules · DPAK
T410-600B-TR from STMicroelectronics, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Main terminal 1 (anode 1), the reference terminal for gate voltage/current and other electrical characteristics (e.g., IGT, VGT measured with respect to A1). |
| 2 | A2 | passive | Main terminal 2 (anode 2), internally connected to the package tab which forms the mounting/heatsink surface (Rth(j-c) = 2.6 °C/W). |
| 3 | G | input | Gate trigger input; triac turns on when gate current IGT (10 mA typ./max. 10 mA for T410, up to 4 A peak IGM) is applied, referenced to A1. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | DPAK |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate trigger current (Quadrants I-II-III) | IGT | 10 | mA | VD = 12 V, RL = 30 Ω, I - II - III | 2 | ||
| Gate trigger voltage | VGT | 1.3 | V | VD = 12 V, RL = 30 Ω, I - II - III | 2 | ||
| Gate non-trigger voltage | VGD | 0.2 | V | VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C, I - II - III | 2 | ||
| Holding current | IH | 15 | mA | IT = 100 mA | 2 | ||
| Latching current (Quadrant I-III) | IL | 25 | mA | IG = 1.2 IGT, I - III | 2 | ||
| Latching current (Quadrant II) | IL | 30 | mA | IG = 1.2 IGT, II | 2 | ||
| Critical rate of rise of off-state voltage | dV/dt | 40 | V/µs | VD = 67% VDRM, gate open, Tj = 125 °C | 2 | ||
| On-state voltage | VTM | 1.56 | V | ITM = 5.5 A, tp = 380 µs, Tj = 25 °C | 3 | ||
| Threshold voltage | Vt0 | 0.89 | V | Tj = 125 °C | 3 | ||
| Dynamic resistance | Rd | 120 | mΩ | Tj = 125 °C | 3 | ||
| Repetitive peak off-state current | IDRM, IRRM | 5 | µA | VDRM = VRRM, Tj = 25 °C | 3 | ||
| Repetitive peak off-state current | IDRM, IRRM | 1 | mA | VDRM = VRRM, Tj = 125 °C | 3 | ||
| RMS on-state current (full sine wave) | IT(rms) | 4 | A | Tc = 110 °C | 2 | ||
| Non repetitive surge peak on-state current | ITSM | 30 | A | F = 50 Hz, t = 20 ms, full cycle, Tj initial = 25 °C | 2 | ||
| Non repetitive surge peak on-state current | ITSM | 31 | A | F = 60 Hz, t = 16.7 ms, full cycle, Tj initial = 25 °C | 2 | ||
| I²t value for fusing | I²t | 5.1 | A²s | tp = 10 ms | 2 | ||
| Critical rate of rise of on-state current | dI/dt | 50 | A/µs | IG = 2 x IGT, tr ≤ 100 ns, F = 120 Hz, Tj = 125 °C | 2 | ||
| Peak gate current | IGM | 4 | A | tp = 20 µs, Tj = 125 °C | 2 | ||
| Average gate power dissipation | PG(AV) | 1 | W | Tj = 125 °C | 2 | ||
| Storage junction temperature range | Tstg | -40 | 150 | °C | 2 | ||
| Operating junction temperature range | Tj | -40 | 125 | °C | 2 | ||
| Junction to case (AC) thermal resistance | Rth(j-c) | 2.6 | °C/W | IPAK, DPAK, TO-220AB | 3 | ||
| Junction to ambient thermal resistance (DPAK) | Rth(j-a) | 70 | °C/W | S = 0.5 cm² copper surface under tab | 3 |
CAD (KiCad official)
- Symbol:
T410-600B-TR - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: DPAK (KiCad packages3D, STEP)
- 3D model files:
t410-600b-tr-etched.step/t410-600b-tr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);t410-600b-tr.step/t410-600b-tr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (15 pp, sha256
e28e0c1c755cad1e, retrieved 2026-09-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-sonnet-5(text+vision), consensusclaude-opus-4-8(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).