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README.md t410-600b-tr: specified limits as data (metadata.characteristics, 23 rows from the datasheet) · Ray 24d ago
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T410-600B-TR

STMicroelectronics · Thyristors (SCR)/Modules · DPAK

T410-600B-TR from STMicroelectronics, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Main terminal 1 (anode 1), the reference terminal for gate voltage/current and other electrical characteristics (e.g., IGT, VGT measured with respect to A1).
2 A2 passive Main terminal 2 (anode 2), internally connected to the package tab which forms the mounting/heatsink surface (Rth(j-c) = 2.6 °C/W).
3 G input Gate trigger input; triac turns on when gate current IGT (10 mA typ./max. 10 mA for T410, up to 4 A peak IGM) is applied, referenced to A1.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package DPAK
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate trigger current (Quadrants I-II-III) IGT 10 mA VD = 12 V, RL = 30 Ω, I - II - III 2
Gate trigger voltage VGT 1.3 V VD = 12 V, RL = 30 Ω, I - II - III 2
Gate non-trigger voltage VGD 0.2 V VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C, I - II - III 2
Holding current IH 15 mA IT = 100 mA 2
Latching current (Quadrant I-III) IL 25 mA IG = 1.2 IGT, I - III 2
Latching current (Quadrant II) IL 30 mA IG = 1.2 IGT, II 2
Critical rate of rise of off-state voltage dV/dt 40 V/µs VD = 67% VDRM, gate open, Tj = 125 °C 2
On-state voltage VTM 1.56 V ITM = 5.5 A, tp = 380 µs, Tj = 25 °C 3
Threshold voltage Vt0 0.89 V Tj = 125 °C 3
Dynamic resistance Rd 120 mΩ Tj = 125 °C 3
Repetitive peak off-state current IDRM, IRRM 5 µA VDRM = VRRM, Tj = 25 °C 3
Repetitive peak off-state current IDRM, IRRM 1 mA VDRM = VRRM, Tj = 125 °C 3
RMS on-state current (full sine wave) IT(rms) 4 A Tc = 110 °C 2
Non repetitive surge peak on-state current ITSM 30 A F = 50 Hz, t = 20 ms, full cycle, Tj initial = 25 °C 2
Non repetitive surge peak on-state current ITSM 31 A F = 60 Hz, t = 16.7 ms, full cycle, Tj initial = 25 °C 2
I²t value for fusing I²t 5.1 A²s tp = 10 ms 2
Critical rate of rise of on-state current dI/dt 50 A/µs IG = 2 x IGT, tr ≤ 100 ns, F = 120 Hz, Tj = 125 °C 2
Peak gate current IGM 4 A tp = 20 µs, Tj = 125 °C 2
Average gate power dissipation PG(AV) 1 W Tj = 125 °C 2
Storage junction temperature range Tstg -40 150 °C 2
Operating junction temperature range Tj -40 125 °C 2
Junction to case (AC) thermal resistance Rth(j-c) 2.6 °C/W IPAK, DPAK, TO-220AB 3
Junction to ambient thermal resistance (DPAK) Rth(j-a) 70 °C/W S = 0.5 cm² copper surface under tab 3

CAD (KiCad official)

  • Symbol: T410-600B-TR
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: DPAK (KiCad packages3D, STEP)
  • 3D model files: t410-600b-tr-etched.step / t410-600b-tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); t410-600b-tr.step / t410-600b-tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (15 pp, sha256 e28e0c1c755cad1e, retrieved 2026-09-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-sonnet-5 (text+vision), consensus claude-opus-4-8 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF