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T2035H-6I

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STMicroelectronics Thyristors (SCR)/Modules, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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T2035H-6I

STMicroelectronics · Thyristors (SCR)/Modules · TO-220AB

T2035H-6I from STMicroelectronics, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Main terminal A1 (reference terminal for gate and for the A2 polarity in the 600 V VDRM/VRRM, 20 A IT(RMS) triac).
2 A2 passive Main terminal A2, carrying up to 20 A RMS on-state current (IT(RMS)) and blocking 600 V (VDRM/VRRM) in both polarities.
3 G input Gate trigger input, IGT max 35 mA for T2035H (VD = 12 V, RL = 33 Ω), VGT max 1.0 V.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
RMS on-state current (full sine wave), TO-220AB Ins. IT(RMS) 20 A Full sine wave, TO-220AB Ins. Tc = 108 °C 2
Non repetitive surge peak on-state current ITSM 200 A Full cycle, Tj initial = 25 °C, f = 50 Hz, t = 20 ms 2
Non repetitive surge peak on-state current ITSM 210 A Full cycle, Tj initial = 25 °C, f = 60 Hz, t = 16.7 ms 2
I2t value for fusing I2t 265 A2s tp = 10 ms 2
Critical rate of rise of on-state current dI/dt 100 A/µs IG = 2 x IGT, tr ≤ 100 ns, f = 100 Hz, f = 120 Hz, Tj = 25 °C 2
Peak gate current IGM 4 A tp = 20 µs, Tj = 150 °C 2
Average gate power dissipation PG(AV) 1 W Tj = 150 °C 2
Storage temperature range Tstg -40 150 °C 2
Operating junction temperature range Tj -40 150 °C 2
Repetitive peak off-state voltage (product summary) VDRM/VRRM 600 V 1
Gate trigger current IGT 35 mA VD = 12 V, RL = 33 Ω, quadrants I - II - III 2
Gate trigger voltage VGT 1 V 2
Gate non-trigger voltage VGD 0.15 V VD = VDRM, RL = 3.3 kΩ, quadrants I - II - III 2
Latching current IL 50 mA IG = 1.2 x IGT, quadrants I - III 2
Latching current IL 80 mA IG = 1.2 x IGT, quadrant II 2
Holding current IH 35 mA IT = 500 mA, gate open 2
Critical rate of rise of off-state voltage dV/dt 1000 V/µs VD = 2/3 x VDRM, gate open, Tj = 150 °C 2
Critical rate of decrease of main current (dI/dt)c 27 A/ms Without snubber, Tj = 150 °C 2
On-state voltage VT 1.5 V IT = 28 A, tp = 380 µs, Tj = 25 °C 3
Threshold voltage VTO 0.8 V Tj = 150 °C 3
Dynamic resistance RD 19 mΩ Tj = 150 °C 3
Peak off-state leakage current IDRM/IRRM 5 µA VD = VR = 600 V, Tj = 25 °C 3
Peak off-state leakage current IDRM/IRRM 6.2 mA VD = VR = 600 V, Tj = 150 °C 3
Thermal resistance junction to case (AC), TO-220AB Ins. Rth(j-c) 1.9 °C/W Junction to case (AC), TO-220AB Ins. 3
Thermal resistance junction to ambient, TO-220AB Ins. Rth(j-a) 60 °C/W Junction to ambient, Scu = 2 cm2, TO-220AB Ins. 3

CAD (KiCad official)

  • Symbol: T2035H-6I
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: t2035h-6i-etched.step / t2035h-6i-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); t2035h-6i.step / t2035h-6i.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (13 pp, sha256 1c1859af1e047754, retrieved 2026-10-11, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF