component
T2035H-6I
Public Made by Adomby adom
STMicroelectronics Thyristors (SCR)/Modules, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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t2035h-6i: specified limits as data (metadata.characteristics, 25 rows from the datasheet)
2 files changed
+340−1
README.md+32@@ -21,6 +21,38 @@ T2035H-6I from STMicroelectronics, in a TO-220AB. Pinout and pin descriptions ex | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| RMS on-state current (full sine wave), TO-220AB Ins. | IT(RMS) | | | 20 | A | Full sine wave, TO-220AB Ins. Tc = 108 °C | 2 |+| Non repetitive surge peak on-state current | ITSM | | | 200 | A | Full cycle, Tj initial = 25 °C, f = 50 Hz, t = 20 ms | 2 |+| Non repetitive surge peak on-state current | ITSM | | | 210 | A | Full cycle, Tj initial = 25 °C, f = 60 Hz, t = 16.7 ms | 2 |+| I2t value for fusing | I2t | | | 265 | A2s | tp = 10 ms | 2 |+| Critical rate of rise of on-state current | dI/dt | | | 100 | A/µs | IG = 2 x IGT, tr ≤ 100 ns, f = 100 Hz, f = 120 Hz, Tj = 25 °C | 2 |+| Peak gate current | IGM | | | 4 | A | tp = 20 µs, Tj = 150 °C | 2 |+| Average gate power dissipation | PG(AV) | | | 1 | W | Tj = 150 °C | 2 |+| Storage temperature range | Tstg | -40 | | 150 | °C | | 2 |+| Operating junction temperature range | Tj | -40 | | 150 | °C | | 2 |+| Repetitive peak off-state voltage (product summary) | VDRM/VRRM | | | 600 | V | | 1 |+| Gate trigger current | IGT | | | 35 | mA | VD = 12 V, RL = 33 Ω, quadrants I - II - III | 2 |+| Gate trigger voltage | VGT | | | 1 | V | | 2 |+| Gate non-trigger voltage | VGD | | | 0.15 | V | VD = VDRM, RL = 3.3 kΩ, quadrants I - II - III | 2 |+| Latching current | IL | | | 50 | mA | IG = 1.2 x IGT, quadrants I - III | 2 |+| Latching current | IL | | | 80 | mA | IG = 1.2 x IGT, quadrant II | 2 |+| Holding current | IH | | | 35 | mA | IT = 500 mA, gate open | 2 |+| Critical rate of rise of off-state voltage | dV/dt | 1000 | | | V/µs | VD = 2/3 x VDRM, gate open, Tj = 150 °C | 2 |+| Critical rate of decrease of main current | (dI/dt)c | 27 | | | A/ms | Without snubber, Tj = 150 °C | 2 |+| On-state voltage | VT | | | 1.5 | V | IT = 28 A, tp = 380 µs, Tj = 25 °C | 3 |+| Threshold voltage | VTO | | | 0.8 | V | Tj = 150 °C | 3 |+| Dynamic resistance | RD | | | 19 | mΩ | Tj = 150 °C | 3 |+| Peak off-state leakage current | IDRM/IRRM | | | 5 | µA | VD = VR = 600 V, Tj = 25 °C | 3 |+| Peak off-state leakage current | IDRM/IRRM | | | 6.2 | mA | VD = VR = 600 V, Tj = 150 °C | 3 |+| Thermal resistance junction to case (AC), TO-220AB Ins. | Rth(j-c) | | 1.9 | | °C/W | Junction to case (AC), TO-220AB Ins. | 3 |+| Thermal resistance junction to ambient, TO-220AB Ins. | Rth(j-a) | | 60 | | °C/W | Junction to ambient, Scu = 2 cm2, TO-220AB Ins. | 3 |+ ## CAD (KiCad official) - Symbol: `T2035H-6I`
page.json+308−1@@ -151,6 +151,313 @@ "Package": "TO-220AB", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "1c1859af1e047754",+ "rows": [+ {+ "name": "RMS on-state current (full sine wave), TO-220AB Ins.",+ "symbol": "IT(RMS)",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "Full sine wave, TO-220AB Ins. Tc = 108 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Non repetitive surge peak on-state current",+ "symbol": "ITSM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "Full cycle, Tj initial = 25 °C, f = 50 Hz, t = 20 ms",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Non repetitive surge peak on-state current",+ "symbol": "ITSM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 210,+ "conditions": "Full cycle, Tj initial = 25 °C, f = 60 Hz, t = 16.7 ms",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "I2t value for fusing",+ "symbol": "I2t",+ "kind": "absolute_maximum",+ "unit": "A2s",+ "min": null,+ "typ": null,+ "max": 265,+ "conditions": "tp = 10 ms",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of rise of on-state current",+ "symbol": "dI/dt",+ "kind": "absolute_maximum",+ "unit": "A/µs",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "IG = 2 x IGT, tr ≤ 100 ns, f = 100 Hz, f = 120 Hz, Tj = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Peak gate current",+ "symbol": "IGM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "tp = 20 µs, Tj = 150 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Average gate power dissipation",+ "symbol": "PG(AV)",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "Tj = 150 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature range",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature range",+ "symbol": "Tj",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Repetitive peak off-state voltage (product summary)",+ "symbol": "VDRM/VRRM",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 600,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate trigger current",+ "symbol": "IGT",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 35,+ "conditions": "VD = 12 V, RL = 33 Ω, quadrants I - II - III",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate trigger voltage",+ "symbol": "VGT",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate non-trigger voltage",+ "symbol": "VGD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.15,+ "conditions": "VD = VDRM, RL = 3.3 kΩ, quadrants I - II - III",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Latching current",+ "symbol": "IL",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "IG = 1.2 x IGT, quadrants I - III",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Latching current",+ "symbol": "IL",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "IG = 1.2 x IGT, quadrant II",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Holding current",+ "symbol": "IH",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 35,+ "conditions": "IT = 500 mA, gate open",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of rise of off-state voltage",+ "symbol": "dV/dt",+ "kind": "electrical",+ "unit": "V/µs",+ "min": 1000,+ "typ": null,+ "max": null,+ "conditions": "VD = 2/3 x VDRM, gate open, Tj = 150 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of decrease of main current",+ "symbol": "(dI/dt)c",+ "kind": "electrical",+ "unit": "A/ms",+ "min": 27,+ "typ": null,+ "max": null,+ "conditions": "Without snubber, Tj = 150 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-state voltage",+ "symbol": "VT",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.5,+ "conditions": "IT = 28 A, tp = 380 µs, Tj = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Threshold voltage",+ "symbol": "VTO",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.8,+ "conditions": "Tj = 150 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Dynamic resistance",+ "symbol": "RD",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 19,+ "conditions": "Tj = 150 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Peak off-state leakage current",+ "symbol": "IDRM/IRRM",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VD = VR = 600 V, Tj = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Peak off-state leakage current",+ "symbol": "IDRM/IRRM",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 6.2,+ "conditions": "VD = VR = 600 V, Tj = 150 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction to case (AC), TO-220AB Ins.",+ "symbol": "Rth(j-c)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 1.9,+ "max": null,+ "conditions": "Junction to case (AC), TO-220AB Ins.",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction to ambient, TO-220AB Ins.",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 60,+ "max": null,+ "conditions": "Junction to ambient, Scu = 2 cm2, TO-220AB Ins.",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -192,4 +499,4 @@ "visibility": { "public": true }-}+}