T1610T-8I

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  "slug": "t1610t-8i",
  "title": "T1610T-8I",
  "brief": "STMicroelectronics Thyristors (SCR)/Modules, TO-220AB. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
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  "component": {
    "mpn": "T1610T-8I",
    "manufacturer": "STMicroelectronics",
    "package": "TO-220AB",
    "pin_count": 4,
    "category": "Transistors/Thyristors",
    "subcategory": "Thyristors (SCR)/Modules",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590277973212225536",
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    "pins": [
      {
        "number": "1",
        "name": "A1",
        "type": "passive",
        "description": "Main terminal 1 (MT1/Anode 1). Reference terminal for A2 and gate; carries the AC load current together with A2. Blocking capability VDRM/VRRM = 800 V (Tj = 125 °C); on-state RMS current up to 16 A at Tc = 108 °C."
      },
      {
        "number": "2",
        "name": "A2",
        "type": "passive",
        "description": "Main terminal 2 (MT2/Anode 2). Second AC power terminal; electrically connected to the mounting tab. Rated 16 A RMS on-state current with VDRM/VRRM = 800 V; non-repetitive surge ITSM = 120 A (50 Hz, 20 ms)."
      },
      {
        "number": "3",
        "name": "G",
        "type": "input",
        "description": "Gate trigger input. Logic-level sensitive: IGT = 0.5 mA min / 10 mA max, VGT = 1.3 V max (VD = 12 V, RL = 30 Ω), allowing direct microcontroller drive. Peak gate current IGM = 4 A (tp = 20 µs); average gate power PG(AV) = 1 W. Triggers in quadrants I, II, and III."
      },
      {
        "number": "TAB",
        "name": "TAB",
        "type": "passive",
        "description": "Mounting tab, internally connected to A2 but ceramic-insulated from the heatsink (Vins = 2500 V rms, 1 minute). Recommended mounting torque 0.4-0.6 N·m. Thermal path: Rth(j-c) = 2.1 °C/W."
      }
    ],
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        "sha256": "71685e80c96e7fe1",
        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 4,
        "described": 4,
        "cites_pages": true,
        "refuses_to_fabricate": true
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        "units": "mm",
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        "seat": "body on z = 0, through-hole leads below",
        "extents_mm": [
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        "zmin_mm": -9.75,
        "centre_offset_mm": 0.932,
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        "checked": "2026-10-07",
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  "metadata": {
    "specs": {
      "Manufacturer": "STMicroelectronics",
      "Package": "TO-220AB",
      "Category": "Transistors/Thyristors",
      "Pins": "4"
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    "characteristics": {
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        {
          "name": "On-state rms current (full sine wave), Tc = 108 °C",
          "symbol": "IT(RMS)",
          "kind": "absolute_maximum",
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          "conditions": "Tc = 108 °C",
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        {
          "name": "On-state rms current (full sine wave), Tc = 119 °C",
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          "conditions": "full cycle, Tj initial = 25 °C; F = 50 Hz, t = 20 ms",
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          "name": "Non repetitive surge peak on-state current",
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          "unit": "A",
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          "conditions": "full cycle, Tj initial = 25 °C; F = 60 Hz, t = 16.7 ms",
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        {
          "name": "I²t value for fusing",
          "symbol": "I²t",
          "kind": "absolute_maximum",
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        {
          "name": "Repetitive peak off-state voltage, gate open",
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          "max": 600,
          "conditions": "Tj = 150 °C",
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          "name": "Repetitive peak off-state voltage, gate open",
          "symbol": "VDRM, VRRM",
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          "unit": "V",
          "min": null,
          "typ": null,
          "max": 800,
          "conditions": "Tj = 125 °C",
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        },
        {
          "name": "Non repetitive surge peak off-state voltage",
          "symbol": "VDSM, VRSM",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 900,
          "conditions": "tp = 10 ms, Tj = 25 °C",
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        {
          "name": "Critical rate of rise of on-state current",
          "symbol": "dI/dt",
          "kind": "absolute_maximum",
          "unit": "A/µs",
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          "typ": null,
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          "conditions": "IG = 2 x IGT, F = 100 Hz",
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        {
          "name": "Peak gate current",
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          "conditions": "tp = 20 µs",
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        {
          "name": "Average gate power dissipation",
          "symbol": "PG(AV)",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
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          "max": 1,
          "conditions": "",
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        {
          "name": "Storage junction temperature range",
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          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -40,
          "typ": null,
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          "conditions": "",
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          "name": "Operating junction temperature range",
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        {
          "name": "Lead temperature for soldering",
          "symbol": "TL",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": null,
          "typ": null,
          "max": 260,
          "conditions": "10 s, at 4 mm from case for TO220AB-ins.",
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        },
        {
          "name": "Insulation rms voltage",
          "symbol": "Vins (rms)",
          "kind": "absolute_maximum",
          "unit": "V",
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          "typ": null,
          "max": 2500,
          "conditions": "1 minute, TO220AB ceramic insulated",
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        {
          "name": "Gate trigger current",
          "symbol": "IGT",
          "kind": "electrical",
          "unit": "mA",
          "min": 0.5,
          "typ": null,
          "max": null,
          "conditions": "VD = 12 V, RL = 30 Ω; quadrants I - II - III",
          "source_page": 3,
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        {
          "name": "Gate trigger current",
          "symbol": "IGT",
          "kind": "electrical",
          "unit": "mA",
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          "max": 10,
          "conditions": "VD = 12 V, RL = 30 Ω; quadrants I - II - III",
          "source_page": 3,
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        {
          "name": "Gate trigger voltage",
          "symbol": "VGT",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 1.3,
          "conditions": "VD = 12 V, RL = 30 Ω; all quadrants",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Gate non-trigger voltage",
          "symbol": "VGD",
          "kind": "electrical",
          "unit": "V",
          "min": 0.2,
          "typ": null,
          "max": null,
          "conditions": "VD = 800 V, RL = 3.3 kΩ, Tj = 125 °C; all quadrants",
          "source_page": 3,
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          "name": "Holding current",
          "symbol": "IH",
          "kind": "electrical",
          "unit": "mA",
          "min": null,
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          "max": 25,
          "conditions": "IT = 500 mA",
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        },
        {
          "name": "Latching current",
          "symbol": "IL",
          "kind": "electrical",
          "unit": "mA",
          "min": null,
          "typ": null,
          "max": 20,
          "conditions": "IG = 1.2 IGT; quadrants I - III",
          "source_page": 3,
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        {
          "name": "Latching current",
          "symbol": "IL",
          "kind": "electrical",
          "unit": "mA",
          "min": null,
          "typ": null,
          "max": 30,
          "conditions": "IG = 1.2 IGT; quadrant II",
          "source_page": 3,
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        {
          "name": "Critical rate of rise of off-state voltage",
          "symbol": "dV/dt",
          "kind": "electrical",
          "unit": "V/µs",
          "min": 100,
          "typ": null,
          "max": null,
          "conditions": "VD = 67% x 800 V, gate open, Tj = 125 °C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Critical rate of rise of off-state voltage",
          "symbol": "dV/dt",
          "kind": "electrical",
          "unit": "V/µs",
          "min": 50,
          "typ": null,
          "max": null,
          "conditions": "VD = 67% x 600 V, gate open, Tj = 150 °C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Critical rate of decrease of on-state current (commutation)",
          "symbol": "(dI/dt)c",
          "kind": "electrical",
          "unit": "A/ms",
          "min": 9,
          "typ": null,
          "max": null,
          "conditions": "(dV/dt)c = 0.1 V/µs, Tj = 125 °C",
          "source_page": 3,
          "source": "datasheet"
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        {
          "name": "Critical rate of decrease of on-state current (commutation)",
          "symbol": "(dI/dt)c",
          "kind": "electrical",
          "unit": "A/ms",
          "min": 3,
          "typ": null,
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          "conditions": "(dV/dt)c = 10 V/µs, Tj = 125 °C",
          "source_page": 3,
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        {
          "name": "Critical rate of decrease of on-state current (commutation)",
          "symbol": "(dI/dt)c",
          "kind": "electrical",
          "unit": "A/ms",
          "min": 5.4,
          "typ": null,
          "max": null,
          "conditions": "(dV/dt)c = 0.1 V/µs, Tj = 150 °C",
          "source_page": 3,
          "source": "datasheet"
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        {
          "name": "Critical rate of decrease of on-state current (commutation)",
          "symbol": "(dI/dt)c",
          "kind": "electrical",
          "unit": "A/ms",
          "min": 1.8,
          "typ": null,
          "max": null,
          "conditions": "(dV/dt)c = 10 V/µs, Tj = 150 °C",
          "source_page": 3,
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        },
        {
          "name": "On-state voltage",
          "symbol": "VTM",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 1.55,
          "conditions": "ITM = 22.6 A, tp = 380 µs, Tj = 25 °C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Threshold voltage",
          "symbol": "Vto",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 0.85,
          "conditions": "Tj = 150 °C",
          "source_page": 3,
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        },
        {
          "name": "Dynamic resistance",
          "symbol": "Rd",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": null,
          "max": 30,
          "conditions": "Tj = 150 °C",
          "source_page": 3,
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          "name": "Off-state leakage current (repetitive)",
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          "kind": "electrical",
          "unit": "µA",
          "min": null,
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          "max": 5,
          "conditions": "VDRM = VRRM = 800 V, Tj = 25 °C",
          "source_page": 3,
          "source": "datasheet"
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        {
          "name": "Off-state leakage current (repetitive)",
          "symbol": "IDRM/IRRM",
          "kind": "electrical",
          "unit": "mA",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "VDRM = VRRM = 800 V, Tj = 125 °C",
          "source_page": 3,
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        {
          "name": "Off-state leakage current (repetitive)",
          "symbol": "IDRM/IRRM",
          "kind": "electrical",
          "unit": "mA",
          "min": null,
          "typ": null,
          "max": 3.6,
          "conditions": "VDRM = VRRM = 600 V, Tj = 150 °C",
          "source_page": 3,
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          "name": "Junction to case (AC) thermal resistance",
          "symbol": "Rth(j-c)",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 2.1,
          "max": null,
          "conditions": "AC",
          "source_page": 3,
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        {
          "name": "Junction to ambient thermal resistance",
          "symbol": "Rth(j-a)",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 60,
          "max": null,
          "conditions": "",
          "source_page": 3,
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  "updated_at": "2026-09-25T09:18:08.784Z"
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