component
T1610T-8I
Public Made by Adomby adom
STMicroelectronics Thyristors (SCR)/Modules, TO-220AB. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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t1610t-8i: specified limits as data (metadata.characteristics, 36 rows from the datasheet)
2 files changed
+482
README.md+43@@ -28,6 +28,49 @@ Same part, different packaging or reel option. - `T1610T-8I` +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| On-state rms current (full sine wave), Tc = 108 °C | IT(RMS) | | | 16 | A | Tc = 108 °C | 2 |+| On-state rms current (full sine wave), Tc = 119 °C | IT(RMS) | | | 12 | A | Tc = 119 °C | 2 |+| Non repetitive surge peak on-state current | ITSM | | | 120 | A | full cycle, Tj initial = 25 °C; F = 50 Hz, t = 20 ms | 2 |+| Non repetitive surge peak on-state current | ITSM | | | 126 | A | full cycle, Tj initial = 25 °C; F = 60 Hz, t = 16.7 ms | 2 |+| I²t value for fusing | I²t | | | 95 | A²s | tp = 10 ms | 2 |+| Repetitive peak off-state voltage, gate open | VDRM, VRRM | | | 600 | V | Tj = 150 °C | 2 |+| Repetitive peak off-state voltage, gate open | VDRM, VRRM | | | 800 | V | Tj = 125 °C | 2 |+| Non repetitive surge peak off-state voltage | VDSM, VRSM | | | 900 | V | tp = 10 ms, Tj = 25 °C | 2 |+| Critical rate of rise of on-state current | dI/dt | | | 100 | A/µs | IG = 2 x IGT, F = 100 Hz | 2 |+| Peak gate current | IGM | | | 4 | A | tp = 20 µs | 2 |+| Average gate power dissipation | PG(AV) | | | 1 | W | | 2 |+| Storage junction temperature range | Tstg | -40 | | 150 | °C | | 2 |+| Operating junction temperature range | Tj | -40 | | 150 | °C | | 2 |+| Lead temperature for soldering | TL | | | 260 | °C | 10 s, at 4 mm from case for TO220AB-ins. | 2 |+| Insulation rms voltage | Vins (rms) | | | 2500 | V | 1 minute, TO220AB ceramic insulated | 2 |+| Gate trigger current | IGT | 0.5 | | | mA | VD = 12 V, RL = 30 Ω; quadrants I - II - III | 3 |+| Gate trigger current | IGT | | | 10 | mA | VD = 12 V, RL = 30 Ω; quadrants I - II - III | 3 |+| Gate trigger voltage | VGT | | | 1.3 | V | VD = 12 V, RL = 30 Ω; all quadrants | 3 |+| Gate non-trigger voltage | VGD | 0.2 | | | V | VD = 800 V, RL = 3.3 kΩ, Tj = 125 °C; all quadrants | 3 |+| Holding current | IH | | | 25 | mA | IT = 500 mA | 3 |+| Latching current | IL | | | 20 | mA | IG = 1.2 IGT; quadrants I - III | 3 |+| Latching current | IL | | | 30 | mA | IG = 1.2 IGT; quadrant II | 3 |+| Critical rate of rise of off-state voltage | dV/dt | 100 | | | V/µs | VD = 67% x 800 V, gate open, Tj = 125 °C | 3 |+| Critical rate of rise of off-state voltage | dV/dt | 50 | | | V/µs | VD = 67% x 600 V, gate open, Tj = 150 °C | 3 |+| Critical rate of decrease of on-state current (commutation) | (dI/dt)c | 9 | | | A/ms | (dV/dt)c = 0.1 V/µs, Tj = 125 °C | 3 |+| Critical rate of decrease of on-state current (commutation) | (dI/dt)c | 3 | | | A/ms | (dV/dt)c = 10 V/µs, Tj = 125 °C | 3 |+| Critical rate of decrease of on-state current (commutation) | (dI/dt)c | 5.4 | | | A/ms | (dV/dt)c = 0.1 V/µs, Tj = 150 °C | 3 |+| Critical rate of decrease of on-state current (commutation) | (dI/dt)c | 1.8 | | | A/ms | (dV/dt)c = 10 V/µs, Tj = 150 °C | 3 |+| On-state voltage | VTM | | | 1.55 | V | ITM = 22.6 A, tp = 380 µs, Tj = 25 °C | 3 |+| Threshold voltage | Vto | | | 0.85 | V | Tj = 150 °C | 3 |+| Dynamic resistance | Rd | | | 30 | mΩ | Tj = 150 °C | 3 |+| Off-state leakage current (repetitive) | IDRM/IRRM | | | 5 | µA | VDRM = VRRM = 800 V, Tj = 25 °C | 3 |+| Off-state leakage current (repetitive) | IDRM/IRRM | | | 1 | mA | VDRM = VRRM = 800 V, Tj = 125 °C | 3 |+| Off-state leakage current (repetitive) | IDRM/IRRM | | | 3.6 | mA | VDRM = VRRM = 600 V, Tj = 150 °C | 3 |+| Junction to case (AC) thermal resistance | Rth(j-c) | | 2.1 | | °C/W | AC | 3 |+| Junction to ambient thermal resistance | Rth(j-a) | | 60 | | °C/W | | 3 |+ ## CAD (KiCad official) - Symbol: `T1610T-8I`
page.json+439@@ -122,6 +122,445 @@ "Package": "TO-220AB", "Category": "Transistors/Thyristors", "Pins": "4"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "71685e80c96e7fe1",+ "rows": [+ {+ "name": "On-state rms current (full sine wave), Tc = 108 °C",+ "symbol": "IT(RMS)",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 16,+ "conditions": "Tc = 108 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-state rms current (full sine wave), Tc = 119 °C",+ "symbol": "IT(RMS)",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 12,+ "conditions": "Tc = 119 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Non repetitive surge peak on-state current",+ "symbol": "ITSM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 120,+ "conditions": "full cycle, Tj initial = 25 °C; F = 50 Hz, t = 20 ms",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Non repetitive surge peak on-state current",+ "symbol": "ITSM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 126,+ "conditions": "full cycle, Tj initial = 25 °C; F = 60 Hz, t = 16.7 ms",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "I²t value for fusing",+ "symbol": "I²t",+ "kind": "absolute_maximum",+ "unit": "A²s",+ "min": null,+ "typ": null,+ "max": 95,+ "conditions": "tp = 10 ms",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Repetitive peak off-state voltage, gate open",+ "symbol": "VDRM, VRRM",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 600,+ "conditions": "Tj = 150 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Repetitive peak off-state voltage, gate open",+ "symbol": "VDRM, VRRM",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 800,+ "conditions": "Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Non repetitive surge peak off-state voltage",+ "symbol": "VDSM, VRSM",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 900,+ "conditions": "tp = 10 ms, Tj = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of rise of on-state current",+ "symbol": "dI/dt",+ "kind": "absolute_maximum",+ "unit": "A/µs",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "IG = 2 x IGT, F = 100 Hz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Peak gate current",+ "symbol": "IGM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "tp = 20 µs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Average gate power dissipation",+ "symbol": "PG(AV)",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage junction temperature range",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature range",+ "symbol": "Tj",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Lead temperature for soldering",+ "symbol": "TL",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 260,+ "conditions": "10 s, at 4 mm from case for TO220AB-ins.",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Insulation rms voltage",+ "symbol": "Vins (rms)",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 2500,+ "conditions": "1 minute, TO220AB ceramic insulated",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate trigger current",+ "symbol": "IGT",+ "kind": "electrical",+ "unit": "mA",+ "min": 0.5,+ "typ": null,+ "max": null,+ "conditions": "VD = 12 V, RL = 30 Ω; quadrants I - II - III",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate trigger current",+ "symbol": "IGT",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VD = 12 V, RL = 30 Ω; quadrants I - II - III",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate trigger voltage",+ "symbol": "VGT",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.3,+ "conditions": "VD = 12 V, RL = 30 Ω; all quadrants",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate non-trigger voltage",+ "symbol": "VGD",+ "kind": "electrical",+ "unit": "V",+ "min": 0.2,+ "typ": null,+ "max": null,+ "conditions": "VD = 800 V, RL = 3.3 kΩ, Tj = 125 °C; all quadrants",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Holding current",+ "symbol": "IH",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 25,+ "conditions": "IT = 500 mA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Latching current",+ "symbol": "IL",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "IG = 1.2 IGT; quadrants I - III",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Latching current",+ "symbol": "IL",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "IG = 1.2 IGT; quadrant II",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of rise of off-state voltage",+ "symbol": "dV/dt",+ "kind": "electrical",+ "unit": "V/µs",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "VD = 67% x 800 V, gate open, Tj = 125 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of rise of off-state voltage",+ "symbol": "dV/dt",+ "kind": "electrical",+ "unit": "V/µs",+ "min": 50,+ "typ": null,+ "max": null,+ "conditions": "VD = 67% x 600 V, gate open, Tj = 150 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of decrease of on-state current (commutation)",+ "symbol": "(dI/dt)c",+ "kind": "electrical",+ "unit": "A/ms",+ "min": 9,+ "typ": null,+ "max": null,+ "conditions": "(dV/dt)c = 0.1 V/µs, Tj = 125 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of decrease of on-state current (commutation)",+ "symbol": "(dI/dt)c",+ "kind": "electrical",+ "unit": "A/ms",+ "min": 3,+ "typ": null,+ "max": null,+ "conditions": "(dV/dt)c = 10 V/µs, Tj = 125 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of decrease of on-state current (commutation)",+ "symbol": "(dI/dt)c",+ "kind": "electrical",+ "unit": "A/ms",+ "min": 5.4,+ "typ": null,+ "max": null,+ "conditions": "(dV/dt)c = 0.1 V/µs, Tj = 150 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of decrease of on-state current (commutation)",+ "symbol": "(dI/dt)c",+ "kind": "electrical",+ "unit": "A/ms",+ "min": 1.8,+ "typ": null,+ "max": null,+ "conditions": "(dV/dt)c = 10 V/µs, Tj = 150 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "On-state voltage",+ "symbol": "VTM",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.55,+ "conditions": "ITM = 22.6 A, tp = 380 µs, Tj = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Threshold voltage",+ "symbol": "Vto",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.85,+ "conditions": "Tj = 150 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Dynamic resistance",+ "symbol": "Rd",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "Tj = 150 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Off-state leakage current (repetitive)",+ "symbol": "IDRM/IRRM",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VDRM = VRRM = 800 V, Tj = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Off-state leakage current (repetitive)",+ "symbol": "IDRM/IRRM",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDRM = VRRM = 800 V, Tj = 125 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Off-state leakage current (repetitive)",+ "symbol": "IDRM/IRRM",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 3.6,+ "conditions": "VDRM = VRRM = 600 V, Tj = 150 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Junction to case (AC) thermal resistance",+ "symbol": "Rth(j-c)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 2.1,+ "max": null,+ "conditions": "AC",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Junction to ambient thermal resistance",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 60,+ "max": null,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [