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T1610T-8I

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by adom

STMicroelectronics Thyristors (SCR)/Modules, TO-220AB. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.

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T1610T-8I

STMicroelectronics · Thyristors (SCR)/Modules · TO-220AB

T1610T-8I from STMicroelectronics, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Main terminal 1 (MT1/Anode 1). Reference terminal for A2 and gate; carries the AC load current together with A2. Blocking capability VDRM/VRRM = 800 V (Tj = 125 °C); on-state RMS current up to 16 A at Tc = 108 °C.
2 A2 passive Main terminal 2 (MT2/Anode 2). Second AC power terminal; electrically connected to the mounting tab. Rated 16 A RMS on-state current with VDRM/VRRM = 800 V; non-repetitive surge ITSM = 120 A (50 Hz, 20 ms).
3 G input Gate trigger input. Logic-level sensitive: IGT = 0.5 mA min / 10 mA max, VGT = 1.3 V max (VD = 12 V, RL = 30 Ω), allowing direct microcontroller drive. Peak gate current IGM = 4 A (tp = 20 µs); average gate power PG(AV) = 1 W. Triggers in quadrants I, II, and III.
TAB TAB passive Mounting tab, internally connected to A2 but ceramic-insulated from the heatsink (Vins = 2500 V rms, 1 minute). Recommended mounting torque 0.4-0.6 N·m. Thermal path: Rth(j-c) = 2.1 °C/W.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220AB
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • T1610T-8I

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
On-state rms current (full sine wave), Tc = 108 °C IT(RMS) 16 A Tc = 108 °C 2
On-state rms current (full sine wave), Tc = 119 °C IT(RMS) 12 A Tc = 119 °C 2
Non repetitive surge peak on-state current ITSM 120 A full cycle, Tj initial = 25 °C; F = 50 Hz, t = 20 ms 2
Non repetitive surge peak on-state current ITSM 126 A full cycle, Tj initial = 25 °C; F = 60 Hz, t = 16.7 ms 2
I²t value for fusing I²t 95 A²s tp = 10 ms 2
Repetitive peak off-state voltage, gate open VDRM, VRRM 600 V Tj = 150 °C 2
Repetitive peak off-state voltage, gate open VDRM, VRRM 800 V Tj = 125 °C 2
Non repetitive surge peak off-state voltage VDSM, VRSM 900 V tp = 10 ms, Tj = 25 °C 2
Critical rate of rise of on-state current dI/dt 100 A/µs IG = 2 x IGT, F = 100 Hz 2
Peak gate current IGM 4 A tp = 20 µs 2
Average gate power dissipation PG(AV) 1 W 2
Storage junction temperature range Tstg -40 150 °C 2
Operating junction temperature range Tj -40 150 °C 2
Lead temperature for soldering TL 260 °C 10 s, at 4 mm from case for TO220AB-ins. 2
Insulation rms voltage Vins (rms) 2500 V 1 minute, TO220AB ceramic insulated 2
Gate trigger current IGT 0.5 mA VD = 12 V, RL = 30 Ω; quadrants I - II - III 3
Gate trigger current IGT 10 mA VD = 12 V, RL = 30 Ω; quadrants I - II - III 3
Gate trigger voltage VGT 1.3 V VD = 12 V, RL = 30 Ω; all quadrants 3
Gate non-trigger voltage VGD 0.2 V VD = 800 V, RL = 3.3 kΩ, Tj = 125 °C; all quadrants 3
Holding current IH 25 mA IT = 500 mA 3
Latching current IL 20 mA IG = 1.2 IGT; quadrants I - III 3
Latching current IL 30 mA IG = 1.2 IGT; quadrant II 3
Critical rate of rise of off-state voltage dV/dt 100 V/µs VD = 67% x 800 V, gate open, Tj = 125 °C 3
Critical rate of rise of off-state voltage dV/dt 50 V/µs VD = 67% x 600 V, gate open, Tj = 150 °C 3
Critical rate of decrease of on-state current (commutation) (dI/dt)c 9 A/ms (dV/dt)c = 0.1 V/µs, Tj = 125 °C 3
Critical rate of decrease of on-state current (commutation) (dI/dt)c 3 A/ms (dV/dt)c = 10 V/µs, Tj = 125 °C 3
Critical rate of decrease of on-state current (commutation) (dI/dt)c 5.4 A/ms (dV/dt)c = 0.1 V/µs, Tj = 150 °C 3
Critical rate of decrease of on-state current (commutation) (dI/dt)c 1.8 A/ms (dV/dt)c = 10 V/µs, Tj = 150 °C 3
On-state voltage VTM 1.55 V ITM = 22.6 A, tp = 380 µs, Tj = 25 °C 3
Threshold voltage Vto 0.85 V Tj = 150 °C 3
Dynamic resistance Rd 30 mΩ Tj = 150 °C 3
Off-state leakage current (repetitive) IDRM/IRRM 5 µA VDRM = VRRM = 800 V, Tj = 25 °C 3
Off-state leakage current (repetitive) IDRM/IRRM 1 mA VDRM = VRRM = 800 V, Tj = 125 °C 3
Off-state leakage current (repetitive) IDRM/IRRM 3.6 mA VDRM = VRRM = 600 V, Tj = 150 °C 3
Junction to case (AC) thermal resistance Rth(j-c) 2.1 °C/W AC 3
Junction to ambient thermal resistance Rth(j-a) 60 °C/W 3

CAD (KiCad official)

  • Symbol: T1610T-8I
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: t1610t-8i-etched.step / t1610t-8i-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); t1610t-8i.step / t1610t-8i.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (None pp, sha256 71685e80c96e7fe1, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF