# SWSA1N60DC

**Samwin** · MOSFETs · SOT-223

SWSA1N60DC from Samwin, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel MOSFET, rated for VGS of ±30 V with a threshold voltage of 2.5 V to 4.5 V at VDS=VGS, ID=250 uA. |
| 2 | Drain | passive | Drain of the N-channel MOSFET, rated for VDSS of 600 V and a continuous current of 1 A (pulsed 4 A). |
| 3 | Source | passive | Source of the N-channel MOSFET, connected to the body diode anode, with a continuous source current of 1 A (pulsed 4 A). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | SOT-223 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source voltage | VDSS |  |  | 600 | V |  | 1 |
| Continuous drain current | ID |  |  | 1 | A | @TC=25oC | 1 |
| Continuous drain current | ID |  |  | 0.63 | A | @TC=100oC | 1 |
| Drain current pulsed | IDM |  |  | 4 | A | note 1 | 1 |
| Gate to source voltage | VGS | -30 |  | 30 | V |  | 1 |
| Single pulsed avalanche energy | EAS |  |  | 50 | mJ | note 2 | 1 |
| Repetitive avalanche energy | EAR |  |  | 5 | mJ | note 1 | 1 |
| Peak diode recovery dv/dt | dv/dt |  |  | 5 | V/ns | note 3 | 1 |
| Total power dissipation (SOT223) | PD |  |  | 6.7 | W | @TC=25oC | 1 |
| Derating factor above 25oC (SOT223) |  |  |  | 0.05 | W/oC | above 25oC | 1 |
| Operating junction and storage temperature | TSTG, TJ | -55 |  | 150 | oC |  | 1 |
| Drain to source breakdown voltage | BVDSS | 600 |  |  | V | VGS=0V, ID=250uA | 2 |
| Drain to source leakage current | IDSS |  |  | 1 | uA | VDS=600V, VGS=0V | 2 |
| Drain to source leakage current | IDSS |  |  | 50 | uA | VDS=480V, TJ=125oC | 2 |
| Gate to source leakage current, forward | IGSS |  |  | 100 | nA | VGS=30V, VDS=0V | 2 |
| Gate to source leakage current, reverse | IGSS |  |  | -100 | nA | VGS=-30V, VDS=0V | 2 |
| Gate threshold voltage | VGS(TH) | 2.5 |  | 4.5 | V | VDS=VGS, ID=250uA | 2 |
| Drain to source on state resistance | RDS(ON) |  | 7 | 8.5 | Ω | VGS=10V, ID = 0.5A, TJ=25oC | 2 |
| Drain to source on state resistance | RDS(ON) |  |  | 14 | Ω | VGS=10V, ID = 0.5A, TJ=125oC | 2 |
| Junction to case thermal resistance (SOT223) | Rthjc |  | 18.6 |  | oC/W |  | 1 |
| Junction to ambient thermal resistance (SOT223) | Rthja |  | 74.5 |  | oC/W |  | 1 |

## CAD (KiCad official)

- Symbol: `SWSA1N60DC`
- Footprint: `Package_TO_SOT_SMD:SOT-223-3_TabPin2`
- 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files: `swsa1n60dc-etched.step` / `swsa1n60dc-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `swsa1n60dc.step` / `swsa1n60dc.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Samwin datasheet](docs/swsa1n60dc-datasheet.pdf) (6 pp, sha256 `7dec4912301f552c`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/swsa1n60dc-datasheet.pdf)