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SWSA1N60DC

Samwin · MOSFETs · SOT-223

SWSA1N60DC from Samwin, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the N-channel MOSFET, rated for VGS of ±30 V with a threshold voltage of 2.5 V to 4.5 V at VDS=VGS, ID=250 uA.
2 Drain passive Drain of the N-channel MOSFET, rated for VDSS of 600 V and a continuous current of 1 A (pulsed 4 A).
3 Source passive Source of the N-channel MOSFET, connected to the body diode anode, with a continuous source current of 1 A (pulsed 4 A).

Key specifications

Parameter Value
Manufacturer Samwin
Package SOT-223
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to source voltage VDSS 600 V 1
Continuous drain current ID 1 A @TC=25oC 1
Continuous drain current ID 0.63 A @TC=100oC 1
Drain current pulsed IDM 4 A note 1 1
Gate to source voltage VGS -30 30 V 1
Single pulsed avalanche energy EAS 50 mJ note 2 1
Repetitive avalanche energy EAR 5 mJ note 1 1
Peak diode recovery dv/dt dv/dt 5 V/ns note 3 1
Total power dissipation (SOT223) PD 6.7 W @TC=25oC 1
Derating factor above 25oC (SOT223) 0.05 W/oC above 25oC 1
Operating junction and storage temperature TSTG, TJ -55 150 oC 1
Drain to source breakdown voltage BVDSS 600 V VGS=0V, ID=250uA 2
Drain to source leakage current IDSS 1 uA VDS=600V, VGS=0V 2
Drain to source leakage current IDSS 50 uA VDS=480V, TJ=125oC 2
Gate to source leakage current, forward IGSS 100 nA VGS=30V, VDS=0V 2
Gate to source leakage current, reverse IGSS -100 nA VGS=-30V, VDS=0V 2
Gate threshold voltage VGS(TH) 2.5 4.5 V VDS=VGS, ID=250uA 2
Drain to source on state resistance RDS(ON) 7 8.5 Ω VGS=10V, ID = 0.5A, TJ=25oC 2
Drain to source on state resistance RDS(ON) 14 Ω VGS=10V, ID = 0.5A, TJ=125oC 2
Junction to case thermal resistance (SOT223) Rthjc 18.6 oC/W 1
Junction to ambient thermal resistance (SOT223) Rthja 74.5 oC/W 1

CAD (KiCad official)

  • Symbol: SWSA1N60DC
  • Footprint: Package_TO_SOT_SMD:SOT-223-3_TabPin2
  • 3D model: SOT-223 (KiCad packages3D, STEP)
  • 3D model files: swsa1n60dc-etched.step / swsa1n60dc-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); swsa1n60dc.step / swsa1n60dc.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Samwin datasheet (6 pp, sha256 7dec4912301f552c, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF