# SWK028P04

**Samwin** · MOSFETs · SOP-8

SWK028P04 from Samwin, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source pin (pins 1,2,3 are Source); P-channel MOSFET source, continuous drain current -7.5 A. |
| 2 | S | passive | Source pin (pins 1,2,3 are Source); P-channel MOSFET source, continuous drain current -7.5 A. |
| 3 | S | passive | Source pin (pins 1,2,3 are Source); P-channel MOSFET source, continuous drain current -7.5 A. |
| 4 | G | input | Gate pin with gate-to-source voltage limit of ±20 V and threshold of -1 to -3 V. |
| 5 | D | passive | Drain pin (pins 5,6,7,8 are Drain); drain-to-source voltage -40 V. |
| 6 | D | passive | Drain pin (pins 5,6,7,8 are Drain); drain-to-source voltage -40 V. |
| 7 | D | passive | Drain pin (pins 5,6,7,8 are Drain); drain-to-source voltage -40 V. |
| 8 | D | passive | Drain pin (pins 5,6,7,8 are Drain); drain-to-source voltage -40 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source breakdown voltage | BVDSS | -40 |  |  | V | VGS=0V, ID=-250uA | 2 |
| Drain to source leakage current | IDSS |  |  | -1 | uA | VDS=-40V, VGS=0V | 2 |
| Drain to source leakage current | IDSS |  |  | -50 | uA | VDS=-32V, TC=125oC | 2 |
| Gate to source leakage current, forward | IGSS |  |  | -100 | nA | VGS=-20V, VDS=0V | 2 |
| Gate to source leakage current, reverse | IGSS |  |  | 100 | nA | VGS=20V, VDS=0V | 2 |
| Gate threshold voltage | VGS(TH) | -1 |  | -3 | V | VDS=VGS, ID=-250uA | 2 |
| Drain to source on state resistance | RDS(ON) |  | 23 | 40 | mΩ | VGS=-4.5V, ID=-5A | 2 |
| Drain to source on state resistance | RDS(ON) |  | 19 | 28 | mΩ | VGS=-10V, ID=-7A | 2 |
| Continuous source current | IS |  |  | -7.5 | A | Integral reverse p-n Junction diode in the MOSFET | 2 |
| Pulsed source current | ISM |  |  | -30 | A | Integral reverse p-n Junction diode in the MOSFET | 2 |
| Diode forward voltage drop | VSD |  |  | -1.4 | V | IS=-7.5A, VGS=0V | 2 |
| Drain to source voltage | VDSS |  |  | -40 | V |  | 1 |
| Continuous drain current | ID |  |  | -7.5 | A | @TC=25oC, limited by junction temperature | 1 |
| Continuous drain current | ID |  |  | -4.7 | A | @TC=100oC, limited by junction temperature | 1 |
| Drain current pulsed | IDM |  |  | -30 | A | note 1 | 1 |
| Gate to source voltage | VGS | -20 |  | 20 | V |  | 1 |
| Single pulsed avalanche energy | EAS |  |  | 276 | mJ | note 2 | 1 |
| Repetitive avalanche energy | EAR |  |  | 11 | mJ | note 1 | 1 |
| Peak diode recovery dv/dt | dv/dt |  |  | 5 | V/ns | note 3 | 1 |
| Total power dissipation | PD |  |  | 2.4 | W | @Ta=25oC | 1 |
| Operating junction and storage temperature | TSTG, TJ | -55 |  | 150 | oC |  | 1 |
| Thermal resistance, junction to ambient | Rthja |  |  | 53 | oC/W | 1 in2 pad of 2oz copper | 1 |
| Breakdown voltage temperature coefficient | ΔBVDSS/ΔTJ |  | 0.04 |  | V/oC | ID=-250uA, referenced to 25oC | 2 |
| Forward transconductance | Gfs |  | 19 |  | S | VDS=-5V, ID=-3.75A | 2 |
| Input capacitance | Ciss |  | 2681 |  | pF | VGS=0V, VDS=-20V, f=1MHz | 2 |
| Output capacitance | Coss |  | 304 |  | pF | VGS=0V, VDS=-20V, f=1MHz | 2 |
| Reverse transfer capacitance | Crss |  | 247 |  | pF | VGS=0V, VDS=-20V, f=1MHz | 2 |
| Turn on delay time | td(on) |  | 15 |  | ns | VDS=-20V, ID=-7.5A, RG=25Ω, VGS=-10V | 2 |
| Rising time | tr |  | 58 |  | ns | VDS=-20V, ID=-7.5A, RG=25Ω, VGS=-10V | 2 |
| Turn off delay time | td(off) |  | 172 |  | ns | VDS=-20V, ID=-7.5A, RG=25Ω, VGS=-10V | 2 |
| Fall time | tf |  | 128 |  | ns | VDS=-20V, ID=-7.5A, RG=25Ω, VGS=-10V | 2 |
| Total gate charge | Qg |  | 48 |  | nC | VDS=-32V, VGS=-10V, ID=-7.5A, Ig=-3mA | 2 |
| Gate-source charge | Qgs |  | 6 |  | nC | VDS=-32V, VGS=-10V, ID=-7.5A, Ig=-3mA | 2 |
| Gate-drain charge | Qgd |  | 12 |  | nC | VDS=-32V, VGS=-10V, ID=-7.5A, Ig=-3mA | 2 |
| Gate resistance | Rg |  | 6.6 |  | Ω | VDS=0V, Scan F mode | 2 |
| Reverse recovery time | trr |  | 30 |  | ns | IS=-7.5A, VGS=0V, dIF/dt=100A/us | 2 |
| Reverse recovery charge | Qrr |  | 16 |  | nC | IS=-7.5A, VGS=0V, dIF/dt=100A/us | 2 |

## CAD (KiCad official)

- Symbol: `SWK028P04`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `swk028p04-etched.step` / `swk028p04-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `swk028p04.step` / `swk028p04.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Samwin datasheet](docs/swk028p04-datasheet.pdf) (6 pp, sha256 `e4d13456b0d7fc6b`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/swk028p04-datasheet.pdf)