component
SWK028P04
Public Made by Adomby adom
Samwin MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSWK028P04
Samwin · MOSFETs · SOP-8
SWK028P04 from Samwin, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source pin (pins 1,2,3 are Source); P-channel MOSFET source, continuous drain current -7.5 A. |
| 2 | S | passive | Source pin (pins 1,2,3 are Source); P-channel MOSFET source, continuous drain current -7.5 A. |
| 3 | S | passive | Source pin (pins 1,2,3 are Source); P-channel MOSFET source, continuous drain current -7.5 A. |
| 4 | G | input | Gate pin with gate-to-source voltage limit of ±20 V and threshold of -1 to -3 V. |
| 5 | D | passive | Drain pin (pins 5,6,7,8 are Drain); drain-to-source voltage -40 V. |
| 6 | D | passive | Drain pin (pins 5,6,7,8 are Drain); drain-to-source voltage -40 V. |
| 7 | D | passive | Drain pin (pins 5,6,7,8 are Drain); drain-to-source voltage -40 V. |
| 8 | D | passive | Drain pin (pins 5,6,7,8 are Drain); drain-to-source voltage -40 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source breakdown voltage | BVDSS | -40 | V | VGS=0V, ID=-250uA | 2 | ||
| Drain to source leakage current | IDSS | -1 | uA | VDS=-40V, VGS=0V | 2 | ||
| Drain to source leakage current | IDSS | -50 | uA | VDS=-32V, TC=125oC | 2 | ||
| Gate to source leakage current, forward | IGSS | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Gate to source leakage current, reverse | IGSS | 100 | nA | VGS=20V, VDS=0V | 2 | ||
| Gate threshold voltage | VGS(TH) | -1 | -3 | V | VDS=VGS, ID=-250uA | 2 | |
| Drain to source on state resistance | RDS(ON) | 23 | 40 | mΩ | VGS=-4.5V, ID=-5A | 2 | |
| Drain to source on state resistance | RDS(ON) | 19 | 28 | mΩ | VGS=-10V, ID=-7A | 2 | |
| Continuous source current | IS | -7.5 | A | Integral reverse p-n Junction diode in the MOSFET | 2 | ||
| Pulsed source current | ISM | -30 | A | Integral reverse p-n Junction diode in the MOSFET | 2 | ||
| Diode forward voltage drop | VSD | -1.4 | V | IS=-7.5A, VGS=0V | 2 | ||
| Drain to source voltage | VDSS | -40 | V | 1 | |||
| Continuous drain current | ID | -7.5 | A | @TC=25oC, limited by junction temperature | 1 | ||
| Continuous drain current | ID | -4.7 | A | @TC=100oC, limited by junction temperature | 1 | ||
| Drain current pulsed | IDM | -30 | A | note 1 | 1 | ||
| Gate to source voltage | VGS | -20 | 20 | V | 1 | ||
| Single pulsed avalanche energy | EAS | 276 | mJ | note 2 | 1 | ||
| Repetitive avalanche energy | EAR | 11 | mJ | note 1 | 1 | ||
| Peak diode recovery dv/dt | dv/dt | 5 | V/ns | note 3 | 1 | ||
| Total power dissipation | PD | 2.4 | W | @Ta=25oC | 1 | ||
| Operating junction and storage temperature | TSTG, TJ | -55 | 150 | oC | 1 | ||
| Thermal resistance, junction to ambient | Rthja | 53 | oC/W | 1 in2 pad of 2oz copper | 1 | ||
| Breakdown voltage temperature coefficient | ΔBVDSS/ΔTJ | 0.04 | V/oC | ID=-250uA, referenced to 25oC | 2 | ||
| Forward transconductance | Gfs | 19 | S | VDS=-5V, ID=-3.75A | 2 | ||
| Input capacitance | Ciss | 2681 | pF | VGS=0V, VDS=-20V, f=1MHz | 2 | ||
| Output capacitance | Coss | 304 | pF | VGS=0V, VDS=-20V, f=1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 247 | pF | VGS=0V, VDS=-20V, f=1MHz | 2 | ||
| Turn on delay time | td(on) | 15 | ns | VDS=-20V, ID=-7.5A, RG=25Ω, VGS=-10V | 2 | ||
| Rising time | tr | 58 | ns | VDS=-20V, ID=-7.5A, RG=25Ω, VGS=-10V | 2 | ||
| Turn off delay time | td(off) | 172 | ns | VDS=-20V, ID=-7.5A, RG=25Ω, VGS=-10V | 2 | ||
| Fall time | tf | 128 | ns | VDS=-20V, ID=-7.5A, RG=25Ω, VGS=-10V | 2 | ||
| Total gate charge | Qg | 48 | nC | VDS=-32V, VGS=-10V, ID=-7.5A, Ig=-3mA | 2 | ||
| Gate-source charge | Qgs | 6 | nC | VDS=-32V, VGS=-10V, ID=-7.5A, Ig=-3mA | 2 | ||
| Gate-drain charge | Qgd | 12 | nC | VDS=-32V, VGS=-10V, ID=-7.5A, Ig=-3mA | 2 | ||
| Gate resistance | Rg | 6.6 | Ω | VDS=0V, Scan F mode | 2 | ||
| Reverse recovery time | trr | 30 | ns | IS=-7.5A, VGS=0V, dIF/dt=100A/us | 2 | ||
| Reverse recovery charge | Qrr | 16 | nC | IS=-7.5A, VGS=0V, dIF/dt=100A/us | 2 |
CAD (KiCad official)
- Symbol:
SWK028P04 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
swk028p04-etched.step/swk028p04-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);swk028p04.step/swk028p04.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Samwin datasheet (6 pp, sha256
e4d13456b0d7fc6b, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).