# SWI085R06VS

**Samwin** · MOSFETs · TO-251

SWI085R06VS from Samwin, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; gate-to-source voltage is rated ±20 V. |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET; drain-to-source voltage is rated 60 V with continuous drain current of 85 A at TC=25oC. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET; the integral reverse p-n junction diode is between source and drain, with continuous source current of 85 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | TO-251 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source voltage | VDSS |  |  | 60 | V |  | 1 |
| Continuous drain current | ID |  |  | 85 | A | @TC=25oC | 1 |
| Continuous drain current | ID |  |  | 59 | A | @TC=100oC | 1 |
| Drain current pulsed | IDM |  |  | 340 | A | note 1 | 1 |
| Gate to source voltage | VGS | -20 |  | 20 | V |  | 1 |
| Single pulsed avalanche energy | EAS |  |  | 95 | mJ | note 2 | 1 |
| Repetitive avalanche energy | EAR |  |  | 9 | mJ | note 1 | 1 |
| Peak diode recovery dv/dt | dv/dt |  |  | 5 | V/ns | note 3 | 1 |
| Total power dissipation | PD |  |  | 125 | W | @TC=25oC | 1 |
| Derating factor above 25oC |  |  |  | 1 | W/oC |  | 1 |
| Operating junction and storage temperature | TSTG, TJ | -55 |  | 150 | oC |  | 1 |
| Maximum lead temperature for soldering | TL |  |  | 300 | oC | 1/8 from case for 5 seconds | 1 |
| Thermal resistance, junction to case | Rthjc |  |  | 1 | oC/W |  | 1 |
| Thermal resistance, junction to ambient | Rthja |  |  | 68 | oC/W |  | 1 |
| Drain to source breakdown voltage | BVDSS | 60 |  |  | V | VGS=0V, ID=250uA | 2 |
| Breakdown voltage temperature coefficient | ΔBVDSS/ΔTJ |  | 0.03 |  | V/oC | ID=250uA, referenced to 25oC | 2 |
| Drain to source leakage current | IDSS |  |  | 1 | uA | VDS=60V, VGS=0V | 2 |
| Drain to source leakage current | IDSS |  |  | 50 | uA | VDS=48V, TJ=125oC | 2 |
| Gate to source leakage current, forward | IGSS |  |  | 100 | nA | VGS=20V, VDS=0V | 2 |
| Gate to source leakage current, reverse | IGSS |  |  | -100 | nA | VGS=-20V, VDS=0V | 2 |
| Gate threshold voltage | VGS(TH) | 1.4 |  | 2.4 | V | VDS=VGS, ID=250uA | 2 |
| Drain to source on state resistance | RDS(ON) |  | 13 | 15 | mΩ | VGS=4.5V, ID=11.5A,TJ=25oC | 2 |
| Drain to source on state resistance | RDS(ON) |  | 9 | 12 | mΩ | VGS=10V, ID=13.5A,TJ=25oC | 2 |
| Drain to source on state resistance | RDS(ON) |  | 13.1 |  | mΩ | VGS=10V, ID=13.5A,TJ=125oC | 2 |
| Forward transconductance | Gfs |  | 37 |  | S | VDS=5V, ID=13.5A | 2 |
| Input capacitance | Ciss |  | 1013 |  | pF | VGS=0V, VDS=30V, f=1MHz | 2 |
| Output capacitance | Coss |  | 470 |  | pF | VGS=0V, VDS=30V, f=1MHz | 2 |
| Reverse transfer capacitance | Crss |  | 24 |  | pF | VGS=0V, VDS=30V, f=1MHz | 2 |
| Turn on delay time | td(on) |  | 6 |  | ns | VDS=30V, ID=13.5A, RG=3Ω, VGS=10V (note 4,5) | 2 |
| Rising time | tr |  | 33 |  | ns | VDS=30V, ID=13.5A, RG=3Ω, VGS=10V (note 4,5) | 2 |
| Turn off delay time | td(off) |  | 26 |  | ns | VDS=30V, ID=13.5A, RG=3Ω, VGS=10V (note 4,5) | 2 |
| Fall time | tf |  | 9 |  | ns | VDS=30V, ID=13.5A, RG=3Ω, VGS=10V (note 4,5) | 2 |
| Total gate charge | Qg |  | 19 |  | nC | VDS=48V, VGS=10V, ID=13.5A, IG=3mA (note 4,5) | 2 |
| Gate-source charge | Qgs |  | 3 |  | nC |  | 2 |
| Gate-drain charge | Qgd |  | 6 |  | nC |  | 2 |
| Gate resistance | Rg |  | 1.6 |  | Ω | VDS=0V, Scan F mode | 2 |
| Continuous source current | IS |  |  | 85 | A | Integral reverse p-n junction diode in the MOSFET | 2 |
| Pulsed source current | ISM |  |  | 340 | A |  | 2 |
| Diode forward voltage drop | VSD |  | 1.4 |  | V | IS=13.5A, VGS=0V | 2 |
| Reverse recovery time | trr |  | 27 |  | ns | IS=13.5A, VGS=0V, dIF/dt=100A/us | 2 |
| Reverse recovery charge | Qrr |  | 13 |  | nC | IS=13.5A, VGS=0V, dIF/dt=100A/us | 2 |

## CAD (KiCad official)

- Symbol: `SWI085R06VS`
- Footprint: `Package_TO_SOT_THT:TO-251-3_Vertical`
- 3D model: TO-251 (KiCad packages3D, STEP)
- 3D model files: `swi085r06vs-etched.step` / `swi085r06vs-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `swi085r06vs.step` / `swi085r06vs.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Samwin datasheet](docs/swi085r06vs-datasheet.pdf) (6 pp, sha256 `58df3839823d9b6f`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `off` (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/swi085r06vs-datasheet.pdf)