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SWI085R06VS

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Samwin MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SWI085R06VS

Samwin · MOSFETs · TO-251

SWI085R06VS from Samwin, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; gate-to-source voltage is rated ±20 V.
2 Drain passive Drain terminal of the N-channel MOSFET; drain-to-source voltage is rated 60 V with continuous drain current of 85 A at TC=25oC.
3 Source passive Source terminal of the N-channel MOSFET; the integral reverse p-n junction diode is between source and drain, with continuous source current of 85 A.

Key specifications

Parameter Value
Manufacturer Samwin
Package TO-251
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to source voltage VDSS 60 V 1
Continuous drain current ID 85 A @TC=25oC 1
Continuous drain current ID 59 A @TC=100oC 1
Drain current pulsed IDM 340 A note 1 1
Gate to source voltage VGS -20 20 V 1
Single pulsed avalanche energy EAS 95 mJ note 2 1
Repetitive avalanche energy EAR 9 mJ note 1 1
Peak diode recovery dv/dt dv/dt 5 V/ns note 3 1
Total power dissipation PD 125 W @TC=25oC 1
Derating factor above 25oC 1 W/oC 1
Operating junction and storage temperature TSTG, TJ -55 150 oC 1
Maximum lead temperature for soldering TL 300 oC 1/8 from case for 5 seconds 1
Thermal resistance, junction to case Rthjc 1 oC/W 1
Thermal resistance, junction to ambient Rthja 68 oC/W 1
Drain to source breakdown voltage BVDSS 60 V VGS=0V, ID=250uA 2
Breakdown voltage temperature coefficient ΔBVDSS/ΔTJ 0.03 V/oC ID=250uA, referenced to 25oC 2
Drain to source leakage current IDSS 1 uA VDS=60V, VGS=0V 2
Drain to source leakage current IDSS 50 uA VDS=48V, TJ=125oC 2
Gate to source leakage current, forward IGSS 100 nA VGS=20V, VDS=0V 2
Gate to source leakage current, reverse IGSS -100 nA VGS=-20V, VDS=0V 2
Gate threshold voltage VGS(TH) 1.4 2.4 V VDS=VGS, ID=250uA 2
Drain to source on state resistance RDS(ON) 13 15 mΩ VGS=4.5V, ID=11.5A,TJ=25oC 2
Drain to source on state resistance RDS(ON) 9 12 mΩ VGS=10V, ID=13.5A,TJ=25oC 2
Drain to source on state resistance RDS(ON) 13.1 mΩ VGS=10V, ID=13.5A,TJ=125oC 2
Forward transconductance Gfs 37 S VDS=5V, ID=13.5A 2
Input capacitance Ciss 1013 pF VGS=0V, VDS=30V, f=1MHz 2
Output capacitance Coss 470 pF VGS=0V, VDS=30V, f=1MHz 2
Reverse transfer capacitance Crss 24 pF VGS=0V, VDS=30V, f=1MHz 2
Turn on delay time td(on) 6 ns VDS=30V, ID=13.5A, RG=3Ω, VGS=10V (note 4,5) 2
Rising time tr 33 ns VDS=30V, ID=13.5A, RG=3Ω, VGS=10V (note 4,5) 2
Turn off delay time td(off) 26 ns VDS=30V, ID=13.5A, RG=3Ω, VGS=10V (note 4,5) 2
Fall time tf 9 ns VDS=30V, ID=13.5A, RG=3Ω, VGS=10V (note 4,5) 2
Total gate charge Qg 19 nC VDS=48V, VGS=10V, ID=13.5A, IG=3mA (note 4,5) 2
Gate-source charge Qgs 3 nC 2
Gate-drain charge Qgd 6 nC 2
Gate resistance Rg 1.6 Ω VDS=0V, Scan F mode 2
Continuous source current IS 85 A Integral reverse p-n junction diode in the MOSFET 2
Pulsed source current ISM 340 A 2
Diode forward voltage drop VSD 1.4 V IS=13.5A, VGS=0V 2
Reverse recovery time trr 27 ns IS=13.5A, VGS=0V, dIF/dt=100A/us 2
Reverse recovery charge Qrr 13 nC IS=13.5A, VGS=0V, dIF/dt=100A/us 2

CAD (KiCad official)

  • Symbol: SWI085R06VS
  • Footprint: Package_TO_SOT_THT:TO-251-3_Vertical
  • 3D model: TO-251 (KiCad packages3D, STEP)
  • 3D model files: swi085r06vs-etched.step / swi085r06vs-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); swi085r06vs.step / swi085r06vs.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Samwin datasheet (6 pp, sha256 58df3839823d9b6f, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF