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SWHA018R03VLT

Public Made by Adom

by adom

Samwin MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SWHA018R03VLT

Samwin · MOSFETs · DFN5x6-8

SWHA018R03VLT from Samwin, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source pin of the N-channel MOSFET (pins 1,2,3 are Source); continuous drain current up to 120 A at Tc=25°C.
2 S passive Source pin of the N-channel MOSFET (pins 1,2,3 are Source); continuous drain current up to 120 A at Tc=25°C.
3 S passive Source pin of the N-channel MOSFET (pins 1,2,3 are Source); continuous drain current up to 120 A at Tc=25°C.
4 G input Gate pin with a gate-to-source voltage limit of ±20 V and threshold voltage VGS(TH) of 1.2 V min to 2.4 V max at ID=250 µA.
5 D passive Drain pin (pins 5,6,7,8 are Drain) with a drain-to-source voltage rating of 30 V.
6 D passive Drain pin (pins 5,6,7,8 are Drain) with a drain-to-source voltage rating of 30 V.
7 D passive Drain pin (pins 5,6,7,8 are Drain) with a drain-to-source voltage rating of 30 V.
8 D passive Drain pin (pins 5,6,7,8 are Drain) with a drain-to-source voltage rating of 30 V.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Samwin
Package DFN5x6-8
Category Triode/MOS Tube/Transistor
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to source breakdown voltage BVDSS 30 V VGS=0V, ID=250uA 2
Drain to source leakage current IDSS 1 uA VDS=30V, VGS=0V 2
Drain to source leakage current IDSS 50 uA VDS=24V, TJ=125oC 2
Gate to source leakage current, forward IGSS 100 nA VGS=20V, VDS=0V 2
Gate to source leakage current, reverse IGSS -100 nA VGS=-20V, VDS=0V 2
Gate threshold voltage VGS(TH) 1.2 2.4 V VDS=VGS, ID=250uA 2
Drain to source on state resistance RDS(ON) 2.5 3.5 mΩ VGS=4.5V, ID=30A,TJ=25oC 2
Drain to source on state resistance RDS(ON) 1.6 2.4 mΩ VGS=10V, ID=30A,TJ=25oC 2
Drain to source on state resistance RDS(ON) 2.1 mΩ VGS=10V, ID=30A,TJ=125oC 2
Continuous source current IS 120 A Integral reverse p-n Junction diode in the MOSFET 2
Pulsed source current ISM 480 A 2
Diode forward voltage drop VSD 1.4 V IS=45A, VGS=0V 2
Drain to source voltage VDSS 30 V 1
Continuous drain current ID 120 A Tc=25oC, limited by junction temperature 1
Continuous drain current ID 86 A Tc=100oC, limited by junction temperature 1
Drain current pulsed IDM 480 A note 1 1
Continuous drain current IDSM 33 A Ta=25oC 1
Continuous drain current IDSM 26 A Ta=70oC 1
Gate to source voltage VGS -20 20 V 1
Single pulsed avalanche energy EAS 576 mJ note 2 1
Repetitive avalanche energy EAR 57 mJ note 1 1
Peak diode recovery dv/dt dv/dt 5 V/ns note 3 1
Total power dissipation PD 43 W Tc=25oC 1
Total power dissipation PD 2.6 W Ta=25oC 1
Operating junction temperature & storage temperature TSTG, TJ -55 150 oC 1
Thermal resistance, Junction to case Rthjc 2.9 oC/W 1
Thermal resistance, Junction to ambient Rthja 49 oC/W 1 in2 pad of 2oz copper 1
Breakdown voltage temperature coefficient ΔBVDSS/ΔTJ 0.02 V/oC ID=250uA, referenced to 25oC 2
Forward transconductance Gfs 79 S VDS=5V, ID=30A 2
Input capacitance Ciss 5772 pF VGS=0V, VDS=15V, f=1MHz 2
Output capacitance Coss 1104 pF VGS=0V, VDS=15V, f=1MHz 2
Reverse transfer capacitance Crss 760 pF VGS=0V, VDS=15V, f=1MHz 2
Turn on delay time td(on) 20 ns VDS=15V, ID=30A, RG=4.7Ω, VGS=10V 2
Rising time tr 47 ns VDS=15V, ID=30A, RG=4.7Ω, VGS=10V 2
Turn off delay time td(off) 137 ns VDS=15V, ID=30A, RG=4.7Ω, VGS=10V 2
Fall time tf 69 ns VDS=15V, ID=30A, RG=4.7Ω, VGS=10V 2
Total gate charge Qg 153 nC VDS=24V, VGS=10V, ID=30A, IG=5mA 2
Gate-source charge Qgs 18 nC VDS=24V, VGS=10V, ID=30A, IG=5mA 2
Gate-drain charge Qgd 44 nC VDS=24V, VGS=10V, ID=30A, IG=5mA 2
Gate resistance Rg 3.1 Ω VDS=0V, Scan F mode 2
Reverse recovery time trr 31 ns IS=30A, VGS=0V, dIF/dt=100A/us 2
Reverse recovery charge Qrr 16 nC IS=30A, VGS=0V, dIF/dt=100A/us 2

CAD (KiCad official)

  • Symbol: SWHA018R03VLT
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: swha018r03vlt-etched.step / swha018r03vlt-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); swha018r03vlt.step / swha018r03vlt.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Samwin datasheet (6 pp, sha256 97a3aed02ae03547, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF