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SWHA018R03VLT

Samwin · MOSFETs · DFN5x6-8

SWHA018R03VLT from Samwin, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	S	passive	Source pin of the N-channel MOSFET (pins 1,2,3 are Source); continuous drain current up to 120 A at Tc=25°C.
2	S	passive	Source pin of the N-channel MOSFET (pins 1,2,3 are Source); continuous drain current up to 120 A at Tc=25°C.
3	S	passive	Source pin of the N-channel MOSFET (pins 1,2,3 are Source); continuous drain current up to 120 A at Tc=25°C.
4	G	input	Gate pin with a gate-to-source voltage limit of ±20 V and threshold voltage VGS(TH) of 1.2 V min to 2.4 V max at ID=250 µA.
5	D	passive	Drain pin (pins 5,6,7,8 are Drain) with a drain-to-source voltage rating of 30 V.
6	D	passive	Drain pin (pins 5,6,7,8 are Drain) with a drain-to-source voltage rating of 30 V.
7	D	passive	Drain pin (pins 5,6,7,8 are Drain) with a drain-to-source voltage rating of 30 V.
8	D	passive	Drain pin (pins 5,6,7,8 are Drain) with a drain-to-source voltage rating of 30 V.
9	EP	passive	Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter	Value
Manufacturer	Samwin
Package	DFN5x6-8
Category	Triode/MOS Tube/Transistor
Pins	9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain to source breakdown voltage	BVDSS	30			V	VGS=0V, ID=250uA	2
Drain to source leakage current	IDSS			1	uA	VDS=30V, VGS=0V	2
Drain to source leakage current	IDSS			50	uA	VDS=24V, TJ=125oC	2
Gate to source leakage current, forward	IGSS			100	nA	VGS=20V, VDS=0V	2
Gate to source leakage current, reverse	IGSS	-100			nA	VGS=-20V, VDS=0V	2
Gate threshold voltage	VGS(TH)	1.2		2.4	V	VDS=VGS, ID=250uA	2
Drain to source on state resistance	RDS(ON)		2.5	3.5	mΩ	VGS=4.5V, ID=30A,TJ=25oC	2
Drain to source on state resistance	RDS(ON)		1.6	2.4	mΩ	VGS=10V, ID=30A,TJ=25oC	2
Drain to source on state resistance	RDS(ON)		2.1		mΩ	VGS=10V, ID=30A,TJ=125oC	2
Continuous source current	IS			120	A	Integral reverse p-n Junction diode in the MOSFET	2
Pulsed source current	ISM			480	A		2
Diode forward voltage drop	VSD			1.4	V	IS=45A, VGS=0V	2
Drain to source voltage	VDSS			30	V		1
Continuous drain current	ID			120	A	Tc=25oC, limited by junction temperature	1
Continuous drain current	ID			86	A	Tc=100oC, limited by junction temperature	1
Drain current pulsed	IDM			480	A	note 1	1
Continuous drain current	IDSM			33	A	Ta=25oC	1
Continuous drain current	IDSM			26	A	Ta=70oC	1
Gate to source voltage	VGS	-20		20	V		1
Single pulsed avalanche energy	EAS			576	mJ	note 2	1
Repetitive avalanche energy	EAR			57	mJ	note 1	1
Peak diode recovery dv/dt	dv/dt			5	V/ns	note 3	1
Total power dissipation	PD			43	W	Tc=25oC	1
Total power dissipation	PD			2.6	W	Ta=25oC	1
Operating junction temperature & storage temperature	TSTG, TJ	-55		150	oC		1
Thermal resistance, Junction to case	Rthjc			2.9	oC/W		1
Thermal resistance, Junction to ambient	Rthja			49	oC/W	1 in2 pad of 2oz copper	1
Breakdown voltage temperature coefficient	ΔBVDSS/ΔTJ		0.02		V/oC	ID=250uA, referenced to 25oC	2
Forward transconductance	Gfs		79		S	VDS=5V, ID=30A	2
Input capacitance	Ciss		5772		pF	VGS=0V, VDS=15V, f=1MHz	2
Output capacitance	Coss		1104		pF	VGS=0V, VDS=15V, f=1MHz	2
Reverse transfer capacitance	Crss		760		pF	VGS=0V, VDS=15V, f=1MHz	2
Turn on delay time	td(on)		20		ns	VDS=15V, ID=30A, RG=4.7Ω, VGS=10V	2
Rising time	tr		47		ns	VDS=15V, ID=30A, RG=4.7Ω, VGS=10V	2
Turn off delay time	td(off)		137		ns	VDS=15V, ID=30A, RG=4.7Ω, VGS=10V	2
Fall time	tf		69		ns	VDS=15V, ID=30A, RG=4.7Ω, VGS=10V	2
Total gate charge	Qg		153		nC	VDS=24V, VGS=10V, ID=30A, IG=5mA	2
Gate-source charge	Qgs		18		nC	VDS=24V, VGS=10V, ID=30A, IG=5mA	2
Gate-drain charge	Qgd		44		nC	VDS=24V, VGS=10V, ID=30A, IG=5mA	2
Gate resistance	Rg		3.1		Ω	VDS=0V, Scan F mode	2
Reverse recovery time	trr		31		ns	IS=30A, VGS=0V, dIF/dt=100A/us	2
Reverse recovery charge	Qrr		16		nC	IS=30A, VGS=0V, dIF/dt=100A/us	2

CAD (KiCad official)

Symbol: SWHA018R03VLT
Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
3D model: DFN5x6-8 (KiCad packages3D, STEP)
3D model files: swha018r03vlt-etched.step / swha018r03vlt-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); swha018r03vlt.step / swha018r03vlt.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Samwin datasheet (6 pp, sha256 97a3aed02ae03547, retrieved 2026-10-22, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF