component
SWF5N60D
Public Made by Adomby adom
Samwin MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SWF5N60D
Samwin · MOSFETs · TO-220F
SWF5N60D from Samwin, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel enhancement MOSFET, with gate-source voltage rated at ±30 V (VGS). |
| 2 | Drain | passive | Drain terminal, rated at 600 V drain-to-source (VDSS) with continuous drain current of 5 A at TC=25oC, limited by junction temperature. |
| 3 | Source | passive | Source terminal of the MOSFET; the integral body diode has a forward voltage drop (VSD) of 1.4 V at IS=5A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | TO-220F |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source voltage | VDSS | 600 | V | 1 | |||
| Continuous drain current (@TC=25oC) | ID | 5 | A | @TC=25oC; drain current limited by junction temperature | 1 | ||
| Continuous drain current (@TC=100oC) | ID | 3.2 | A | @TC=100oC; drain current limited by junction temperature | 1 | ||
| Drain current pulsed | IDM | 20 | A | note 1 | 1 | ||
| Gate to source voltage | VGS | -30 | 30 | V | 1 | ||
| Single pulsed avalanche energy | EAS | 166 | mJ | note 2 | 1 | ||
| Repetitive avalanche energy | EAR | 15 | mJ | note 1 | 1 | ||
| Peak diode recovery dv/dt | dv/dt | 5 | V/ns | note 3 | 1 | ||
| Total power dissipation | PD | 19.5 | W | @TC=25oC, TO-220F | 1 | ||
| Derating factor above 25oC | 0.16 | W/oC | TO-220F | 1 | |||
| Operating junction and storage temperature | TSTG, TJ | -55 | 150 | oC | 1 | ||
| Maximum lead temperature for soldering | TL | 300 | oC | 1/8 from case for 5 seconds | 1 | ||
| Thermal resistance, junction to case | Rthjc | 6.42 | oC/W | TO-220F | 1 | ||
| Thermal resistance, junction to ambient | Rthja | 47.8 | oC/W | TO-220F | 1 | ||
| Drain to source breakdown voltage | BVDSS | 600 | V | VGS=0V, ID=250uA | 2 | ||
| Drain to source leakage current | IDSS | 1 | uA | VDS=600V, VGS=0V | 2 | ||
| Drain to source leakage current | IDSS | 50 | uA | VDS=480V, TC=125oC | 2 | ||
| Gate to source leakage current, forward | IGSS | 100 | nA | VGS=30V, VDS=0V | 2 | ||
| Gate to source leakage current, reverse | IGSS | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Gate threshold voltage | VGS(TH) | 2.5 | 4.5 | V | VDS = VGS, ID=250uA | 2 | |
| Drain to source on state resistance | RDS(ON) | 1.9 | 2.2 | Ω | VGS =10V, ID=2.5A | 2 |
CAD (KiCad official)
- Symbol:
SWF5N60D - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Samwin datasheet (6 pp, sha256
d4d6b218169d1d35, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SWF5N60D
**Samwin** · MOSFETs · TO-220F
SWF5N60D from Samwin, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel enhancement MOSFET, with gate-source voltage rated at ±30 V (VGS). |
| 2 | Drain | passive | Drain terminal, rated at 600 V drain-to-source (VDSS) with continuous drain current of 5 A at TC=25oC, limited by junction temperature. |
| 3 | Source | passive | Source terminal of the MOSFET; the integral body diode has a forward voltage drop (VSD) of 1.4 V at IS=5A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | TO-220F |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source voltage | VDSS | | | 600 | V | | 1 |
| Continuous drain current (@TC=25oC) | ID | | | 5 | A | @TC=25oC; drain current limited by junction temperature | 1 |
| Continuous drain current (@TC=100oC) | ID | | | 3.2 | A | @TC=100oC; drain current limited by junction temperature | 1 |
| Drain current pulsed | IDM | | | 20 | A | note 1 | 1 |
| Gate to source voltage | VGS | -30 | | 30 | V | | 1 |
| Single pulsed avalanche energy | EAS | | | 166 | mJ | note 2 | 1 |
| Repetitive avalanche energy | EAR | | | 15 | mJ | note 1 | 1 |
| Peak diode recovery dv/dt | dv/dt | | | 5 | V/ns | note 3 | 1 |
| Total power dissipation | PD | | | 19.5 | W | @TC=25oC, TO-220F | 1 |
| Derating factor above 25oC | | | | 0.16 | W/oC | TO-220F | 1 |
| Operating junction and storage temperature | TSTG, TJ | -55 | | 150 | oC | | 1 |
| Maximum lead temperature for soldering | TL | | | 300 | oC | 1/8 from case for 5 seconds | 1 |
| Thermal resistance, junction to case | Rthjc | | | 6.42 | oC/W | TO-220F | 1 |
| Thermal resistance, junction to ambient | Rthja | | | 47.8 | oC/W | TO-220F | 1 |
| Drain to source breakdown voltage | BVDSS | 600 | | | V | VGS=0V, ID=250uA | 2 |
| Drain to source leakage current | IDSS | | | 1 | uA | VDS=600V, VGS=0V | 2 |
| Drain to source leakage current | IDSS | | | 50 | uA | VDS=480V, TC=125oC | 2 |
| Gate to source leakage current, forward | IGSS | | | 100 | nA | VGS=30V, VDS=0V | 2 |
| Gate to source leakage current, reverse | IGSS | -100 | | | nA | VGS=-30V, VDS=0V | 2 |
| Gate threshold voltage | VGS(TH) | 2.5 | | 4.5 | V | VDS = VGS, ID=250uA | 2 |
| Drain to source on state resistance | RDS(ON) | | 1.9 | 2.2 | Ω | VGS =10V, ID=2.5A | 2 |
## CAD (KiCad official)
- Symbol: `SWF5N60D`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F (KiCad packages3D, STEP)
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Samwin datasheet](docs/swf5n60d-datasheet.pdf) (6 pp, sha256 `d4d6b218169d1d35`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/swf5n60d-datasheet.pdf)