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Contents

README

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SWF5N60D

Samwin · MOSFETs · TO-220F

SWF5N60D from Samwin, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel enhancement MOSFET, with gate-source voltage rated at ±30 V (VGS).
2 Drain passive Drain terminal, rated at 600 V drain-to-source (VDSS) with continuous drain current of 5 A at TC=25oC, limited by junction temperature.
3 Source passive Source terminal of the MOSFET; the integral body diode has a forward voltage drop (VSD) of 1.4 V at IS=5A.

Key specifications

Parameter Value
Manufacturer Samwin
Package TO-220F
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to source voltage VDSS 600 V 1
Continuous drain current (@TC=25oC) ID 5 A @TC=25oC; drain current limited by junction temperature 1
Continuous drain current (@TC=100oC) ID 3.2 A @TC=100oC; drain current limited by junction temperature 1
Drain current pulsed IDM 20 A note 1 1
Gate to source voltage VGS -30 30 V 1
Single pulsed avalanche energy EAS 166 mJ note 2 1
Repetitive avalanche energy EAR 15 mJ note 1 1
Peak diode recovery dv/dt dv/dt 5 V/ns note 3 1
Total power dissipation PD 19.5 W @TC=25oC, TO-220F 1
Derating factor above 25oC 0.16 W/oC TO-220F 1
Operating junction and storage temperature TSTG, TJ -55 150 oC 1
Maximum lead temperature for soldering TL 300 oC 1/8 from case for 5 seconds 1
Thermal resistance, junction to case Rthjc 6.42 oC/W TO-220F 1
Thermal resistance, junction to ambient Rthja 47.8 oC/W TO-220F 1
Drain to source breakdown voltage BVDSS 600 V VGS=0V, ID=250uA 2
Drain to source leakage current IDSS 1 uA VDS=600V, VGS=0V 2
Drain to source leakage current IDSS 50 uA VDS=480V, TC=125oC 2
Gate to source leakage current, forward IGSS 100 nA VGS=30V, VDS=0V 2
Gate to source leakage current, reverse IGSS -100 nA VGS=-30V, VDS=0V 2
Gate threshold voltage VGS(TH) 2.5 4.5 V VDS = VGS, ID=250uA 2
Drain to source on state resistance RDS(ON) 1.9 2.2 Ω VGS =10V, ID=2.5A 2

CAD (KiCad official)

  • Symbol: SWF5N60D
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Samwin datasheet (6 pp, sha256 d4d6b218169d1d35, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF