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SWB7N65DW

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by adom

Samwin MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SWB7N65DW

Samwin · MOSFETs · TO-263

SWB7N65DW from Samwin, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; the gate-to-source voltage is rated at ±30 V (VGS).
2 Drain passive Drain terminal; the drain-to-source voltage is rated at 650 V (VDSS) with continuous drain current of 7 A at TC=25°C, limited by junction temperature.
3 Source passive Source terminal; the integral reverse p-n junction diode is rated at 7 A continuous source current and 28 A pulsed source current.

Key specifications

Parameter Value
Manufacturer Samwin
Package TO-263
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to source voltage VDSS 650 V 1
Continuous drain current ID 7 A @TC=25oC 1
Continuous drain current ID 4.4 A @TC=100oC 1
Drain current pulsed IDM 28 A note 1 1
Gate to source voltage VGS -30 30 V 1
Single pulsed avalanche energy EAS 151 mJ note 2 1
Repetitive avalanche energy EAR 14 mJ note 1 1
Peak diode recovery dv/dt dv/dt 5 V/ns note 3 1
Total power dissipation PD 179 W @TC=25oC 1
Derating factor above 25oC 1.4 W/oC above 25oC 1
Operating junction temperature and storage temperature TSTG, TJ -55 150 oC 1
Thermal resistance, junction to case Rthjc 0.7 oC/W 1
Drain to source breakdown voltage BVDSS 650 V VGS=0V, ID=250uA 2
Drain to source leakage current IDSS 1 uA VDS=650V, VGS=0V 2
Drain to source leakage current IDSS 50 uA VDS=520V, TC=125oC 2
Gate to source leakage current, forward IGSS 100 nA VGS=30V, VDS=0V 2
Gate to source leakage current, reverse IGSS -100 nA VGS=-30V, VDS=0V 2
Gate threshold voltage VGS(TH) 2.5 4.5 V VDS=VGS, ID=250uA 2
Drain to source on state resistance RDS(ON) 0.96 1.2 Ω VGS=10V, ID=3.5A 2
Breakdown voltage temperature coefficient ΔBVDSS/ΔTJ 0.54 V/oC ID=250uA, referenced to 25oC 2
Forward transconductance Gfs 7.2 S VDS=30V, ID=3.5A 2
Input capacitance Ciss 1400 pF VGS=0V, VDS=25V, f=1MHz 2
Output capacitance Coss 127 pF VGS=0V, VDS=25V, f=1MHz 2
Reverse transfer capacitance Crss 21 pF VGS=0V, VDS=25V, f=1MHz 2
Turn on delay time td(on) 28 ns VDS=325V, ID=7A, RG=25Ω, VGS=10V (note 4,5) 2
Rising time tr 58 ns VDS=325V, ID=7A, RG=25Ω, VGS=10V (note 4,5) 2
Turn off delay time td(off) 95 ns VDS=325V, ID=7A, RG=25Ω, VGS=10V (note 4,5) 2
Fall time tf 52 ns VDS=325V, ID=7A, RG=25Ω, VGS=10V (note 4,5) 2
Total gate charge Qg 34 nC VDS=520V, VGS=10V, ID=7A (note 4,5) 2
Gate-source charge Qgs 8 nC VDS=520V, VGS=10V, ID=7A (note 4,5) 2
Gate-drain charge Qgd 15 nC VDS=520V, VGS=10V, ID=7A (note 4,5) 2
Gate resistance Rg 1.3 Ω VDS=0V, Scan F mode 2
Continuous source current IS 7 A Integral reverse p-n junction diode in the MOSFET 2
Pulsed source current ISM 28 A 2
Diode forward voltage drop VSD 1.4 V IS=7A, VGS=0V 2
Reverse recovery time trr 479 ns IS=7A, VGS=0V, dIF/dt=100A/us 2
Reverse recovery charge Qrr 3.8 uC IS=7A, VGS=0V, dIF/dt=100A/us 2

CAD (KiCad official)

  • Symbol: SWB7N65DW
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: swb7n65dw-etched.step / swb7n65dw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); swb7n65dw.step / swb7n65dw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Samwin datasheet (6 pp, sha256 da0add10d66d2e20, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF