component
SWB7N65DW
Public Made by Adomby adom
Samwin MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSWB7N65DW
Samwin · MOSFETs · TO-263
SWB7N65DW from Samwin, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; the gate-to-source voltage is rated at ±30 V (VGS). |
| 2 | Drain | passive | Drain terminal; the drain-to-source voltage is rated at 650 V (VDSS) with continuous drain current of 7 A at TC=25°C, limited by junction temperature. |
| 3 | Source | passive | Source terminal; the integral reverse p-n junction diode is rated at 7 A continuous source current and 28 A pulsed source current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | TO-263 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source voltage | VDSS | 650 | V | 1 | |||
| Continuous drain current | ID | 7 | A | @TC=25oC | 1 | ||
| Continuous drain current | ID | 4.4 | A | @TC=100oC | 1 | ||
| Drain current pulsed | IDM | 28 | A | note 1 | 1 | ||
| Gate to source voltage | VGS | -30 | 30 | V | 1 | ||
| Single pulsed avalanche energy | EAS | 151 | mJ | note 2 | 1 | ||
| Repetitive avalanche energy | EAR | 14 | mJ | note 1 | 1 | ||
| Peak diode recovery dv/dt | dv/dt | 5 | V/ns | note 3 | 1 | ||
| Total power dissipation | PD | 179 | W | @TC=25oC | 1 | ||
| Derating factor above 25oC | 1.4 | W/oC | above 25oC | 1 | |||
| Operating junction temperature and storage temperature | TSTG, TJ | -55 | 150 | oC | 1 | ||
| Thermal resistance, junction to case | Rthjc | 0.7 | oC/W | 1 | |||
| Drain to source breakdown voltage | BVDSS | 650 | V | VGS=0V, ID=250uA | 2 | ||
| Drain to source leakage current | IDSS | 1 | uA | VDS=650V, VGS=0V | 2 | ||
| Drain to source leakage current | IDSS | 50 | uA | VDS=520V, TC=125oC | 2 | ||
| Gate to source leakage current, forward | IGSS | 100 | nA | VGS=30V, VDS=0V | 2 | ||
| Gate to source leakage current, reverse | IGSS | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Gate threshold voltage | VGS(TH) | 2.5 | 4.5 | V | VDS=VGS, ID=250uA | 2 | |
| Drain to source on state resistance | RDS(ON) | 0.96 | 1.2 | Ω | VGS=10V, ID=3.5A | 2 | |
| Breakdown voltage temperature coefficient | ΔBVDSS/ΔTJ | 0.54 | V/oC | ID=250uA, referenced to 25oC | 2 | ||
| Forward transconductance | Gfs | 7.2 | S | VDS=30V, ID=3.5A | 2 | ||
| Input capacitance | Ciss | 1400 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Output capacitance | Coss | 127 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 21 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Turn on delay time | td(on) | 28 | ns | VDS=325V, ID=7A, RG=25Ω, VGS=10V (note 4,5) | 2 | ||
| Rising time | tr | 58 | ns | VDS=325V, ID=7A, RG=25Ω, VGS=10V (note 4,5) | 2 | ||
| Turn off delay time | td(off) | 95 | ns | VDS=325V, ID=7A, RG=25Ω, VGS=10V (note 4,5) | 2 | ||
| Fall time | tf | 52 | ns | VDS=325V, ID=7A, RG=25Ω, VGS=10V (note 4,5) | 2 | ||
| Total gate charge | Qg | 34 | nC | VDS=520V, VGS=10V, ID=7A (note 4,5) | 2 | ||
| Gate-source charge | Qgs | 8 | nC | VDS=520V, VGS=10V, ID=7A (note 4,5) | 2 | ||
| Gate-drain charge | Qgd | 15 | nC | VDS=520V, VGS=10V, ID=7A (note 4,5) | 2 | ||
| Gate resistance | Rg | 1.3 | Ω | VDS=0V, Scan F mode | 2 | ||
| Continuous source current | IS | 7 | A | Integral reverse p-n junction diode in the MOSFET | 2 | ||
| Pulsed source current | ISM | 28 | A | 2 | |||
| Diode forward voltage drop | VSD | 1.4 | V | IS=7A, VGS=0V | 2 | ||
| Reverse recovery time | trr | 479 | ns | IS=7A, VGS=0V, dIF/dt=100A/us | 2 | ||
| Reverse recovery charge | Qrr | 3.8 | uC | IS=7A, VGS=0V, dIF/dt=100A/us | 2 |
CAD (KiCad official)
- Symbol:
SWB7N65DW - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
swb7n65dw-etched.step/swb7n65dw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);swb7n65dw.step/swb7n65dw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Samwin datasheet (6 pp, sha256
da0add10d66d2e20, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).