component
SWB068R68E7T
Public Made by Adomby adom
Samwin MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SWB068R68E7T
Samwin · MOSFETs · TO-263
SWB068R68E7T from Samwin, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel enhancement-mode MOSFET, with a gate-to-source voltage rating of ±20 V (VGS). |
| 2 | Drain | passive | Drain of the MOSFET, rated 68 V drain-to-source (VDSS) with continuous drain current of 90 A at TC=25°C, which is limited by junction temperature. |
| 3 | Source | passive | Source of the MOSFET; the integral body diode is rated 90 A continuous and 360 A pulsed source current (ISM). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source voltage | VDSS | 68 | V | 1 | |||
| Continuous drain current (@TC=25oC) | ID | 90 | A | TC=25oC; drain current limited by junction temperature | 1 | ||
| Continuous drain current (@TC=100oC) | ID | 70 | A | TC=100oC; drain current limited by junction temperature | 1 | ||
| Drain current pulsed | IDM | 360 | A | note 1 | 1 | ||
| Gate to source voltage | VGS | -20 | 20 | V | 1 | ||
| Single pulsed avalanche energy | EAS | 210 | mJ | note 2 | 1 | ||
| Repetitive avalanche energy | EAR | 21 | mJ | note 1 | 1 | ||
| Peak diode recovery dv/dt | dv/dt | 5 | V/ns | note 3 | 1 | ||
| Total power dissipation | PD | 178.6 | W | TC=25oC | 1 | ||
| Derating factor above 25oC | 1.4 | W/oC | above 25oC | 1 | |||
| Operating junction temperature and storage temperature | TSTG, TJ | -55 | 150 | oC | 1 | ||
| Maximum lead temperature for soldering purpose | TL | 300 | oC | 1/8 from case for 5 seconds | 1 | ||
| Thermal resistance, Junction to case | Rthjc | 0.7 | oC/W | 1 | |||
| Thermal resistance, Junction to ambient | Rthja | 46 | oC/W | 1 | |||
| Drain to source breakdown voltage | BVDSS | 68 | V | VGS=0V, ID=250uA | 2 | ||
| Drain to source leakage current | IDSS | 1 | uA | VDS=68V, VGS=0V | 2 | ||
| Drain to source leakage current | IDSS | 50 | uA | VDS=54V, TJ=125oC | 2 | ||
| Gate to source leakage current, forward | IGSS | 100 | nA | VGS=20V, VDS=0V | 2 | ||
| Gate to source leakage current, reverse | IGSS | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Gate threshold voltage | VGS(TH) | 2 | 4 | V | VDS=VGS, ID=250uA | 2 | |
| Drain to source on state resistance | RDS(ON) | 6.8 | 8.1 | mΩ | VGS=10V, ID=40A, TJ=25oC | 2 | |
| Drain to source on state resistance | RDS(ON) | 11 | mΩ | VGS=10V, ID=40A, TJ=125oC | 2 | ||
| Continuous source current | IS | 90 | A | Integral reverse p-n junction diode in the MOSFET | 2 | ||
| Pulsed source current | ISM | 360 | A | 2 | |||
| Diode forward voltage drop | VSD | 1.4 | V | IS=30A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
SWB068R68E7T - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
swb068r68e7t-etched.step/swb068r68e7t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);swb068r68e7t.step/swb068r68e7t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Samwin datasheet (6 pp, sha256
a9cb9ce9856e474f, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SWB068R68E7T
**Samwin** · MOSFETs · TO-263
SWB068R68E7T from Samwin, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel enhancement-mode MOSFET, with a gate-to-source voltage rating of ±20 V (VGS). |
| 2 | Drain | passive | Drain of the MOSFET, rated 68 V drain-to-source (VDSS) with continuous drain current of 90 A at TC=25°C, which is limited by junction temperature. |
| 3 | Source | passive | Source of the MOSFET; the integral body diode is rated 90 A continuous and 360 A pulsed source current (ISM). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to source voltage | VDSS | | | 68 | V | | 1 |
| Continuous drain current (@TC=25oC) | ID | | | 90 | A | TC=25oC; drain current limited by junction temperature | 1 |
| Continuous drain current (@TC=100oC) | ID | | | 70 | A | TC=100oC; drain current limited by junction temperature | 1 |
| Drain current pulsed | IDM | | | 360 | A | note 1 | 1 |
| Gate to source voltage | VGS | -20 | | 20 | V | | 1 |
| Single pulsed avalanche energy | EAS | | | 210 | mJ | note 2 | 1 |
| Repetitive avalanche energy | EAR | | | 21 | mJ | note 1 | 1 |
| Peak diode recovery dv/dt | dv/dt | | | 5 | V/ns | note 3 | 1 |
| Total power dissipation | PD | | | 178.6 | W | TC=25oC | 1 |
| Derating factor above 25oC | | | | 1.4 | W/oC | above 25oC | 1 |
| Operating junction temperature and storage temperature | TSTG, TJ | -55 | | 150 | oC | | 1 |
| Maximum lead temperature for soldering purpose | TL | | | 300 | oC | 1/8 from case for 5 seconds | 1 |
| Thermal resistance, Junction to case | Rthjc | | | 0.7 | oC/W | | 1 |
| Thermal resistance, Junction to ambient | Rthja | | | 46 | oC/W | | 1 |
| Drain to source breakdown voltage | BVDSS | 68 | | | V | VGS=0V, ID=250uA | 2 |
| Drain to source leakage current | IDSS | | | 1 | uA | VDS=68V, VGS=0V | 2 |
| Drain to source leakage current | IDSS | | | 50 | uA | VDS=54V, TJ=125oC | 2 |
| Gate to source leakage current, forward | IGSS | | | 100 | nA | VGS=20V, VDS=0V | 2 |
| Gate to source leakage current, reverse | IGSS | -100 | | | nA | VGS=-20V, VDS=0V | 2 |
| Gate threshold voltage | VGS(TH) | 2 | | 4 | V | VDS=VGS, ID=250uA | 2 |
| Drain to source on state resistance | RDS(ON) | | 6.8 | 8.1 | mΩ | VGS=10V, ID=40A, TJ=25oC | 2 |
| Drain to source on state resistance | RDS(ON) | | | 11 | mΩ | VGS=10V, ID=40A, TJ=125oC | 2 |
| Continuous source current | IS | | | 90 | A | Integral reverse p-n junction diode in the MOSFET | 2 |
| Pulsed source current | ISM | | | 360 | A | | 2 |
| Diode forward voltage drop | VSD | | | 1.4 | V | IS=30A, VGS=0V | 2 |
## CAD (KiCad official)
- Symbol: `SWB068R68E7T`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `swb068r68e7t-etched.step` / `swb068r68e7t-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `swb068r68e7t.step` / `swb068r68e7t.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Samwin datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590340166532698112) (6 pp, sha256 `a9cb9ce9856e474f`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/swb068r68e7t-datasheet.pdf)