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SWB068R68E7T

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Samwin MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SWB068R68E7T

Samwin · MOSFETs · TO-263

SWB068R68E7T from Samwin, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the N-channel enhancement-mode MOSFET, with a gate-to-source voltage rating of ±20 V (VGS).
2 Drain passive Drain of the MOSFET, rated 68 V drain-to-source (VDSS) with continuous drain current of 90 A at TC=25°C, which is limited by junction temperature.
3 Source passive Source of the MOSFET; the integral body diode is rated 90 A continuous and 360 A pulsed source current (ISM).

Key specifications

Parameter Value
Manufacturer Samwin
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to source voltage VDSS 68 V 1
Continuous drain current (@TC=25oC) ID 90 A TC=25oC; drain current limited by junction temperature 1
Continuous drain current (@TC=100oC) ID 70 A TC=100oC; drain current limited by junction temperature 1
Drain current pulsed IDM 360 A note 1 1
Gate to source voltage VGS -20 20 V 1
Single pulsed avalanche energy EAS 210 mJ note 2 1
Repetitive avalanche energy EAR 21 mJ note 1 1
Peak diode recovery dv/dt dv/dt 5 V/ns note 3 1
Total power dissipation PD 178.6 W TC=25oC 1
Derating factor above 25oC 1.4 W/oC above 25oC 1
Operating junction temperature and storage temperature TSTG, TJ -55 150 oC 1
Maximum lead temperature for soldering purpose TL 300 oC 1/8 from case for 5 seconds 1
Thermal resistance, Junction to case Rthjc 0.7 oC/W 1
Thermal resistance, Junction to ambient Rthja 46 oC/W 1
Drain to source breakdown voltage BVDSS 68 V VGS=0V, ID=250uA 2
Drain to source leakage current IDSS 1 uA VDS=68V, VGS=0V 2
Drain to source leakage current IDSS 50 uA VDS=54V, TJ=125oC 2
Gate to source leakage current, forward IGSS 100 nA VGS=20V, VDS=0V 2
Gate to source leakage current, reverse IGSS -100 nA VGS=-20V, VDS=0V 2
Gate threshold voltage VGS(TH) 2 4 V VDS=VGS, ID=250uA 2
Drain to source on state resistance RDS(ON) 6.8 8.1 mΩ VGS=10V, ID=40A, TJ=25oC 2
Drain to source on state resistance RDS(ON) 11 mΩ VGS=10V, ID=40A, TJ=125oC 2
Continuous source current IS 90 A Integral reverse p-n junction diode in the MOSFET 2
Pulsed source current ISM 360 A 2
Diode forward voltage drop VSD 1.4 V IS=30A, VGS=0V 2

CAD (KiCad official)

  • Symbol: SWB068R68E7T
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: swb068r68e7t-etched.step / swb068r68e7t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); swb068r68e7t.step / swb068r68e7t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Samwin datasheet (6 pp, sha256 a9cb9ce9856e474f, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF