component
SW4N60
Public Made by Adomby adom
Samwin MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SW4N60
Samwin · MOSFETs · TO-252-2
SW4N60 from Samwin, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; gate-to-source voltage is rated at ±30 V (VGS). |
| 2 | Drain | passive | Drain terminal; rated 600 V drain-to-source (VDSS) and 4 A continuous drain current at TC=25°C, with drain current limited by junction temperature. |
| 3 | Source | passive | Source terminal; the integral body diode from source to drain is rated 4 A continuous (IS) and 16 A pulsed (ISM). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | TO-252-2 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDSS | 600 | V | 1 | |||
| Continuous Drain Current | ID | 4 | A | @TC=25oC | 1 | ||
| Continuous Drain Current | ID | 2.5 | A | @TC=100oC | 1 | ||
| Drain current pulsed (note 1) | IDM | 16 | A | 1 | |||
| Gate to Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Single pulsed Avalanche Energy (note 2) | EAS | 170 | mJ | 1 | |||
| Repetitive Avalanche Energy (note 1) | EAR | 25 | mJ | 1 | |||
| Peak diode Recovery dv/dt (note 3) | dv/dt | 5 | V/ns | 1 | |||
| Total power dissipation | PD | 147 | W | @TC=25oC | 1 | ||
| Derating Factor above 25oC | 1.17 | W/oC | above 25oC | 1 | |||
| Operating Junction Temperature & Storage Temperature | TSTG, TJ | -55 | 150 | oC | 1 | ||
| Maximum Lead Temperature for soldering purpose | TL | 300 | oC | 1/8 from Case for 5 seconds | 1 | ||
| Thermal resistance, Junction to case | Rthjc | 0.85 | oC/W | 1 | |||
| Thermal resistance, Junction to ambient | Rthja | 87 | oC/W | 1 | |||
| Drain to source breakdown voltage | BVDSS | 600 | V | VGS=0V, ID=250uA | 2 | ||
| Breakdown voltage temperature coefficient | ΔBVDSS/ΔTJ | 0.5 | V/oC | ID=250uA, referenced to 25oC | 2 | ||
| Drain to source leakage current | IDSS | 1 | uA | VDS=610V, VGS=0V | 2 | ||
| Drain to source leakage current | IDSS | 50 | uA | VDS=488V, TC=125oC | 2 | ||
| Gate to source leakage current, forward | IGSS | 100 | nA | VGS=30V, VDS=0V | 2 | ||
| Gate to source leakage current, reverse | IGSS | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Gate threshold voltage | VGS(TH) | 2.5 | 4.5 | V | VDS=VGS, ID=250uA | 2 | |
| Drain to source on state resistance | RDS(ON) | 2 | 2.2 | Ω | VGS=10V, ID = 2A | 2 | |
| Forward Transconductance | Gfs | 3.3 | S | VDS = 30 V, ID = 2A | 2 | ||
| Continuous source current | IS | 4 | A | Integral reverse p-n Junction diode in the MOSFET | 2 | ||
| Pulsed source current | ISM | 16 | A | 2 | |||
| Diode forward voltage drop | VSD | 1.5 | V | IS=4A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
SW4N60 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2 (KiCad packages3D, STEP)
- 3D model files:
sw4n60-etched.step/sw4n60-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sw4n60.step/sw4n60.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Samwin datasheet (6 pp, sha256
16750d66ff6ebb64, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SW4N60
**Samwin** · MOSFETs · TO-252-2
SW4N60 from Samwin, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; gate-to-source voltage is rated at ±30 V (VGS). |
| 2 | Drain | passive | Drain terminal; rated 600 V drain-to-source (VDSS) and 4 A continuous drain current at TC=25°C, with drain current limited by junction temperature. |
| 3 | Source | passive | Source terminal; the integral body diode from source to drain is rated 4 A continuous (IS) and 16 A pulsed (ISM). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | TO-252-2 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDSS | | | 600 | V | | 1 |
| Continuous Drain Current | ID | | | 4 | A | @TC=25oC | 1 |
| Continuous Drain Current | ID | | | 2.5 | A | @TC=100oC | 1 |
| Drain current pulsed (note 1) | IDM | | | 16 | A | | 1 |
| Gate to Source Voltage | VGS | -30 | | 30 | V | | 1 |
| Single pulsed Avalanche Energy (note 2) | EAS | | | 170 | mJ | | 1 |
| Repetitive Avalanche Energy (note 1) | EAR | | | 25 | mJ | | 1 |
| Peak diode Recovery dv/dt (note 3) | dv/dt | | | 5 | V/ns | | 1 |
| Total power dissipation | PD | | | 147 | W | @TC=25oC | 1 |
| Derating Factor above 25oC | | | 1.17 | | W/oC | above 25oC | 1 |
| Operating Junction Temperature & Storage Temperature | TSTG, TJ | -55 | | 150 | oC | | 1 |
| Maximum Lead Temperature for soldering purpose | TL | | | 300 | oC | 1/8 from Case for 5 seconds | 1 |
| Thermal resistance, Junction to case | Rthjc | | 0.85 | | oC/W | | 1 |
| Thermal resistance, Junction to ambient | Rthja | | 87 | | oC/W | | 1 |
| Drain to source breakdown voltage | BVDSS | 600 | | | V | VGS=0V, ID=250uA | 2 |
| Breakdown voltage temperature coefficient | ΔBVDSS/ΔTJ | | 0.5 | | V/oC | ID=250uA, referenced to 25oC | 2 |
| Drain to source leakage current | IDSS | | | 1 | uA | VDS=610V, VGS=0V | 2 |
| Drain to source leakage current | IDSS | | | 50 | uA | VDS=488V, TC=125oC | 2 |
| Gate to source leakage current, forward | IGSS | | | 100 | nA | VGS=30V, VDS=0V | 2 |
| Gate to source leakage current, reverse | IGSS | -100 | | | nA | VGS=-30V, VDS=0V | 2 |
| Gate threshold voltage | VGS(TH) | 2.5 | | 4.5 | V | VDS=VGS, ID=250uA | 2 |
| Drain to source on state resistance | RDS(ON) | | 2 | 2.2 | Ω | VGS=10V, ID = 2A | 2 |
| Forward Transconductance | Gfs | | 3.3 | | S | VDS = 30 V, ID = 2A | 2 |
| Continuous source current | IS | | | 4 | A | Integral reverse p-n Junction diode in the MOSFET | 2 |
| Pulsed source current | ISM | | | 16 | A | | 2 |
| Diode forward voltage drop | VSD | | | 1.5 | V | IS=4A, VGS=0V | 2 |
## CAD (KiCad official)
- Symbol: `SW4N60`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2 (KiCad packages3D, STEP)
- 3D model files: `sw4n60-etched.step` / `sw4n60-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sw4n60.step` / `sw4n60.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Samwin datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588903905443266560) (6 pp, sha256 `16750d66ff6ebb64`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sw4n60-datasheet.pdf)