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SW4N60

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by adom

Samwin MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SW4N60

Samwin · MOSFETs · TO-252-2

SW4N60 from Samwin, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; gate-to-source voltage is rated at ±30 V (VGS).
2 Drain passive Drain terminal; rated 600 V drain-to-source (VDSS) and 4 A continuous drain current at TC=25°C, with drain current limited by junction temperature.
3 Source passive Source terminal; the integral body diode from source to drain is rated 4 A continuous (IS) and 16 A pulsed (ISM).

Key specifications

Parameter Value
Manufacturer Samwin
Package TO-252-2
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to Source Voltage VDSS 600 V 1
Continuous Drain Current ID 4 A @TC=25oC 1
Continuous Drain Current ID 2.5 A @TC=100oC 1
Drain current pulsed (note 1) IDM 16 A 1
Gate to Source Voltage VGS -30 30 V 1
Single pulsed Avalanche Energy (note 2) EAS 170 mJ 1
Repetitive Avalanche Energy (note 1) EAR 25 mJ 1
Peak diode Recovery dv/dt (note 3) dv/dt 5 V/ns 1
Total power dissipation PD 147 W @TC=25oC 1
Derating Factor above 25oC 1.17 W/oC above 25oC 1
Operating Junction Temperature & Storage Temperature TSTG, TJ -55 150 oC 1
Maximum Lead Temperature for soldering purpose TL 300 oC 1/8 from Case for 5 seconds 1
Thermal resistance, Junction to case Rthjc 0.85 oC/W 1
Thermal resistance, Junction to ambient Rthja 87 oC/W 1
Drain to source breakdown voltage BVDSS 600 V VGS=0V, ID=250uA 2
Breakdown voltage temperature coefficient ΔBVDSS/ΔTJ 0.5 V/oC ID=250uA, referenced to 25oC 2
Drain to source leakage current IDSS 1 uA VDS=610V, VGS=0V 2
Drain to source leakage current IDSS 50 uA VDS=488V, TC=125oC 2
Gate to source leakage current, forward IGSS 100 nA VGS=30V, VDS=0V 2
Gate to source leakage current, reverse IGSS -100 nA VGS=-30V, VDS=0V 2
Gate threshold voltage VGS(TH) 2.5 4.5 V VDS=VGS, ID=250uA 2
Drain to source on state resistance RDS(ON) 2 2.2 Ω VGS=10V, ID = 2A 2
Forward Transconductance Gfs 3.3 S VDS = 30 V, ID = 2A 2
Continuous source current IS 4 A Integral reverse p-n Junction diode in the MOSFET 2
Pulsed source current ISM 16 A 2
Diode forward voltage drop VSD 1.5 V IS=4A, VGS=0V 2

CAD (KiCad official)

  • Symbol: SW4N60
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2 (KiCad packages3D, STEP)
  • 3D model files: sw4n60-etched.step / sw4n60-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sw4n60.step / sw4n60.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Samwin datasheet (6 pp, sha256 16750d66ff6ebb64, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF